IRFR3806TRPBF vs IRFH8318TRPBF 对比

详细并排对比 IRFR3806TRPBF 出自 Infineon 和 IRFH8318TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFH8318TRPBF IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF ✓ 量产中

规格对比

参数 IRFR3806TRPBF IRFH8318TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.52 $0.48
Transistor Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at Tc 43 A —
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V —
Total Gate Charge (Qg) 22 nC 41 nC
Power Dissipation (Pd) at Tc = 25 C 71 W —
封装 / 外壳 TO-252AA (DPAK) —
安装类型 Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) StrongIRFET™ (N-Channel Trench MOSFET)
工作温度范围 -55 C to +175 C —
Gate-Source Voltage (VGS) max +/- 20 V —
Number of Units in IC 1 —
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Avalanche Rated Yes (HEXFET family) —
Manufacturer — Infineon Technologies
Part Number — IRFH8318TRPBF
Continuous Drain Current (ID) at Ta=25°C — 27 A
Continuous Drain Current (ID) at Tc=25°C — 120 A
On-Resistance RDS(on) max at VGS=10V — 3.1 mΩ
Power Dissipation (Ta) — 3.6 W
Power Dissipation (Tc) — 59 W
封装 — PQFN 5x6 (SuperSO8, 8-PowerTDFN)
工作温度 — -55°C to +150°C
RoHS 状态 — Compliant
Lead-Free — Yes
MSL 等级 — 1
Description — Synchronous MOSFET for high-frequency buck converters

数据手册与资源

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