IRFR3806TRPBF vs IRFH8318TRPBF Comparación
Comparación detallada lado a lado de IRFR3806TRPBF por Infineon y IRFH8318TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR3806TRPBF | IRFH8318TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,52 | $0,48 |
| Transistor Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at Tc | 43 A | — |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | — |
| Total Gate Charge (Qg) | 22 nC | 41 nC |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | — |
| Encapsulado / Carcasa | TO-252AA (DPAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | StrongIRFET™ (N-Channel Trench MOSFET) |
| Rango de temperatura de funcionamiento | -55 C to +175 C | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Number of Units in IC | 1 | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Avalanche Rated | Yes (HEXFET family) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFH8318TRPBF |
| Continuous Drain Current (ID) at Ta=25°C | — | 27 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 120 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.1 mΩ |
| Power Dissipation (Ta) | — | 3.6 W |
| Power Dissipation (Tc) | — | 59 W |
| Encapsulado | — | PQFN 5x6 (SuperSO8, 8-PowerTDFN) |
| Temperatura de funcionamiento | — | -55°C to +150°C |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Nivel MSL | — | 1 |
| Description | — | Synchronous MOSFET for high-frequency buck converters |