IRFR9024NTRPBF vs IRF7309TRPBF Vergleich
Detaillierter Direktvergleich von IRFR9024NTRPBF von Infineon und IRF7309TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR9024NTRPBF | IRF7309TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,17 | $0,35 |
| Polarity | P-Channel | N+P |
| VDS (Drain-Source Voltage) | -55 V | — |
| Continuous Drain Current (Tc=25C) | -11 A | — |
| Gepulster Drain-Strom | [DATA_NEEDED: pulsed drain current] | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Threshold Voltage) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) Max at VGS=-10V | 175 mOhm | — |
| Total Gate Charge (Qg) | 12.7 nC | — |
| Maximum Power Dissipation (Tc=25C) | 38 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | TO-252AA (DPAK) | 8-SO (SOIC-8) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 | — |
| Technology | HEXFET (Gen 5) | IR HEXFET Generation V |
| RoHS-Status | Compliant | Compliant |
| Configuration | — | Dual N-Channel + P-Channel (Complementary) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (N-channel, TA=25C) | — | 4 A |
| Continuous Drain Current (P-channel, TA=25C) | — | 3 A |
| On-Resistance (N-channel, max) | — | 50 mOhm |
| On-Resistance (P-channel, max) | — | [DATA_NEEDED: RDS(on) P-channel value] |
| Power Dissipation (TA=25C) | — | 1.4 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Betriebstemperaturbereich | — | -55C to +150C (TJ) |
| MSL-Level | — | MSL-1 (unlimited floor life per JEDEC J-STD-020) |
| Lead-Free Status | — | Yes (TRPBF suffix = Pb-free) |
| Packaging | — | Tape & Reel |