IRFZ48NPBF vs IRL3705NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFZ48NPBF tarafından Infineon ve IRL3705NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFZ48NPBF | IRL3705NPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | — |
| Power Dissipation (PD) at TC | 130 W | — |
| İşletim Jant Sıcaklığı | -55C to +175C | — |
| Paket | TO-220AB (through-hole) | TO-220AB (3-pin through-hole) |
| Montaj Türü | Through Hole | Through Hole |
| Technology | HEXFET (advanced planar) | HEXFET (planar cell, fifth generation) |
| Lead-Free (PBF suffix) | Yes | Yes |
| RoHS Durumu | Compliant | Compliant (per PBF suffix) |
| Qualification Standard | Industrial market | — |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc | — | 89 A |
| Pulsed Dræn Akımı | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc | — | 170 W |
| On-Resistance R_DS(on) | — | 10 mOhm (typical, V_GS = 5 V) |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | 65.3 nC |
| Maximum Junction Temperature | — | 175 C |
| Gate Drive Level | — | Logic-level |
| Avalanche Rated | — | Yes (ruggedized single-pulse avalanche) |