IRS2101STRPBF - 600V High/Low-Side Gate Driver IC | Infineon
Teilenummer: IRS2101STRPBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.66 | $16,60 |
| 100 | $1.48 | $148,00 |
| 500 | $1.32 | $660,00 |
| 1.000 | $1.18 | $1.180,00 |
IRS2101STRPBF Übersicht
A gate driver IC is a power-management semiconductor that sits between a low-power logic controller (MCU, DSP, FPGA) and a high-power switching transistor (MOSFET, IGBT, GaN). It level-shifts logic-level PWM signals to the much higher gate-drive voltages required to switch the power device efficiently, and provides source/sink current to charge and discharge the gate capacitance quickly. Within the broader IC taxonomy, gate drivers belong to Power Management > Gate Drivers, sitting alongside motor drivers, LED drivers, and voltage supervisors, and they form the critical interface block in every switching power converter, motor drive, and inverter.
Key features of the IRS2101STRPBF include: floating channel designed for bootstrap operation, fully operational to +600 V with negative transient voltage tolerance (dV/dt immune), gate drive supply range from 10 V to 20 V, undervoltage lockout (UVLO) for both VCC and VBS rails, and logic operational for VS of -5 V to +600 V with logic state held for VS of -5 V to -VBS. The 8-SOIC footprint with exposed variants is industry standard for half-bridge drivers in the sub-1 A class.
Typical applications for the IRS2101STRPBF span motor control (BLDC, PMSM, brushed DC drives), switch-mode power supplies (SMPS) for telecom and industrial DC-DC converters, half-bridge and full-bridge inverters for solar and UPS systems, electronic ballasts and HID lighting drivers, and Class-D audio amplifiers. The 600 V rating covers 110/120/220/230 VAC rectified (up to ~325 VDC bus), while the 0.6 A sink current comfortably drives MOSFETs in the 200-500 nC Qg range at switching frequencies up to several hundred kHz.
When designing with this device, always observe the bootstrap capacitor sizing rule (typically ≥1 µF low-ESR ceramic, plus a local diode rated for the bus voltage) and keep the high-side gate loop area minimal to limit parasitic inductance. The shutdown pin (SD) allows fault-input blanking, and designers should consult Infineon Design Tip DT97-3 for negative-VS transient handling details.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon IRS2101 family and competing 8-pin SOIC gate drivers, and practical design notes not consolidated in the manufacturer datasheet.
Drop-in-Alternativen für IRS2101STRPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IRS2101STRPBF (gleiche Bauform und Footprint) – abweichend in Logic Input Compatibility, Package, RoHS Status, Configuration, MSL Level.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRS2101SPBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRS2104STRPBF
✅ Drop-In✓ Auf Lager
$0.45 / Stück
Datenblatt ansehen →IRS21091STRPBF
✅ Drop-In✓ Auf Lager
$0.65 / Stück
Datenblatt ansehen →IRS21271STRPBF
✅ Drop-In✓ Auf Lager
$1.02 / Stück
Datenblatt ansehen →FAN7390
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRS2011STRPBF
✅ Drop-In✓ Auf Lager
$1.55 / Stück
Datenblatt ansehen →IRS2101STRPBF Grenzwerte & elektrische Eigenschaften
| Driver Type | High-Side, Low-Side (Half-Bridge) |
| Number of Drivers | 2 |
| Anzahl der Ausgänge | 2-OUT |
| Ausgangskonfiguration | Non-Inverting |
| Maximum Offset Voltage | 600 V |
| Gate Drive Supply (VCC) | 10 V to 20 V |
| Bootstrap Supply (VBS) | 10 V to 20 V |
| Source Current (typical) | 0.29 A |
| Sink Current (typical) | 0.6 A |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V |
| VS Transient Range | -5 V to +600 V (logic operational) |
| Undervoltage Lockout | Yes (VCC and VBS) |
| Propagation Delay Matching | Matched both channels |
| dV/dt Immunity | Yes (latch-immune CMOS) |
| Betriebstemperatur | -40C to +125C |
| Gehäuse | 8-SOIC (SOIC-8) |
| Montageart | Surface Mount |
| Packaging | Tape & Reel (TRPBF) |
| Technology | HVIC + latch-immune CMOS |
| RoHS-Status | Compliant (PBF suffix) |
IRS2101STRPBF Pin-Konfiguration
| Pin 1 | VCC — Logic and low-side supply (10 V to 20 V) |
| Pin 2 | IN — Logic input for high-side (3.3 V/5 V/15 V compatible) |
| Pin 3 | SD — Shutdown input (active-low) |
| Pin 4 | COM — Low-side return / ground |
| Pin 5 | LO — Low-side gate drive output |
| Pin 6 | VS — High-side floating supply return (sits at switched node) |
| Pin 7 | HO — High-side gate drive output |
| Pin 8 | VB — High-side floating supply (bootstrap) |
Typische Anwendungen
IRS2101STRPBF ist geeignet für 8 Anwendungs: BLDC / PMSM Motor Drive, Switch-Mode Power Supply (SMPS), Solar Micro-Inverter, Electronic Ballast / HID Lighting, Class-D Audio Amplifier, Uninterruptible Power Supply (UPS), Induction Heating Cooktop, Battery-Powered E-Bike / E-Scooter Controller.
BLDC / PMSM Motor Drive
The IRS2101STRPBF is widely used as the half-bridge gate driver in 3-phase BLDC and PMSM motor drives up to ~500 W. Its 600 V rating covers rectified 110/230 VAC bus rails (~325 VDC), and the 0.6 A sink current switches MOSFETs in the 50-200 nC Qg range at up to 50 kHz PWM. Bootstrap operation on the high side eliminates the need for an isolated supply per phase. Matched propagation delay keeps the high-side and low-side transitions synchronized, minimizing dead-time distortion and audible switching noise in FOC sine drives.
Empfohlen
Switch-Mode Power Supply (SMPS)
In half-bridge and full-bridge SMPS topologies, the IRS2101STRPBF drives the primary-side MOSFETs of telecom and industrial DC-DC converters. Its 600 V withstand handles 380 VDC bus rails comfortably, while the 10-20 V VCC range allows direct drive from 12 V or 15 V auxiliary rails. The 3.3 V/5 V logic input compatibility means no level shifters are needed between an MCU/digital controller and the driver. Undervoltage lockout on both VCC and VBS prevents catastrophic half-bridge shoot-through during start-up and brown-out conditions.
Empfohlen
Solar Micro-Inverter
Grid-tied solar micro-inverters in the 200-600 W range use the IRS2101STRPBF to drive the H-bridge that converts 30-60 VDC panel output to 110/230 VAC. Its 600 V rating exceeds the rectified peak of 230 VAC (~325 V), and the half-bridge topology pairs two IRS2101s to form a full H-bridge for transformer-isolated topologies. The latch-immune CMOS construction ensures long-term reliability in outdoor solar installations subject to temperature cycling and humidity. Bootstrapping keeps the bill of materials low compared to gate-drive transformers.
Empfohlen
Electronic Ballast / HID Lighting
Fluorescent and HID lamp ballasts use the IRS2101STRPBF to drive the half-bridge resonant inverter that ignites and sustains the arc. The 600 V rating handles the high-voltage lamp strike transient, and the 0.6 A sink current drives MOSFETs fast enough for 30-100 kHz resonant operation. UVLO protects the lamp and ballast during warm-up, while dV/dt immunity eliminates false triggering from the steep switching edges common in resonant topologies. The 8-SOIC footprint fits compact CFL-replacement ballasts.
Empfohlen
Class-D Audio Amplifier
Open-loop and closed-loop Class-D audio amplifiers use the IRS2101STRPBF in the output H-bridge that drives the loudspeaker load. Its 600 V rating allows direct connection to PFC-boosted 400 V rails in high-power professional audio. Matched propagation delay (within tens of nanoseconds across both channels) keeps the high-side and low-side transitions aligned, minimizing dead-time and THD distortion. The 3.3 V logic compatibility interfaces directly to common audio DSP modulators without level shifting.
Uninterruptible Power Supply (UPS)
In on-line and line-interactive UPS systems, the IRS2101STRPBF drives the half-bridge inverter stage that converts the battery DC bus back to 110/230 VAC during grid outages. The 600 V rating handles the rectified mains bus, while UVLO prevents cross-conduction during battery reconnect events. The 0.6 A sink current drives IGBTs in the 5-20 A class at 16-25 kHz switching frequency. The 8-SOIC package is small enough to fit compact 500 VA-1 kVA UPS enclosures without sacrificing thermal margin.
Empfohlen
Induction Heating Cooktop
Resonant half-bridge induction heating cooktops operate at 20-50 kHz and use the IRS2101STRPBF to switch the high-voltage IGBTs that drive the induction coil. The 600 V rating covers the rectified 220 VAC mains bus, and the 0.6 A sink current is sufficient for cooktop-class IGBTs in the 20-40 A range. Latch-immune CMOS withstands the high dV/dt of the resonant tank, and the SOIC-8 footprint simplifies the low-cost PCB layout required for consumer cooktop volumes.
Empfohlen
Battery-Powered E-Bike / E-Scooter Controller
E-bike and e-scooter motor controllers running from 36 V / 48 V battery packs use the IRS2101STRPBF as the half-bridge driver in 3-phase inverter modules. While the 600 V rating is far above the 48 V battery voltage, designers choose it for the ruggedized HVIC construction and reliable bootstrap operation. The 0.6 A sink current drives MOSFETs that handle 20-40 A phase currents. The 8-SOIC package is small enough for IPM-style compact motor controller enclosures.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRS2101STRPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRS2101SPBF | IRS2104STRPBF | IRS21091STRPBF | IRS21271STRPBF | FAN7390 | IRS2011STRPBF |
|---|---|---|---|---|---|---|---|
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Offset Voltage (max) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | 200 V |
| VCC/VBS Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V | 3.3 V / 5 V / 15 V |
| UVLO | Yes (VCC + VBS) | Yes | Yes | Yes | Yes | Yes | Yes |
| Shutdown Pin | Yes (SD, active-low) | Yes | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty 1000) | $1.18 | ~$1.18 (tube) | ~$1.45 | ~$1.95 | ~$1.65 | ~$1.30 | ~$1.55 |
Wichtigste Unterscheidungsmerkmale
- 600 V offset rating with proven HVIC monolithic construction (vs. IRS2011STRPBF)
- Matched propagation delay keeps channels in phase (vs. IRS2181STRPBF)
- 3.3 V logic input compatibility without level shifters (vs. FAN7390)
- Larger Infineon ecosystem and longer track record (vs. FAN7390)
Designhinweise
Estimated: At VBUS = 325 VDC, VCC = 15 V, and 100 kHz switching with Qg = 100 nC MOSFETs, the IRS2101STRPBF draws approximately 1.5 mA average from VCC for gate charge, plus quiescent current. The bootstrap capacitor must be sized using the rule C_BS > Qg_total / ΔV_BS where ΔV_BS is the allowable droop (typically 0.1-0.5 V). For 100 nC total gate charge and 0.2 V droop, C_BS ≥ 0.5 µF; design with 1 µF X7R ceramic for margin. Refresh the bootstrap charge every PWM cycle via a fast-recovery diode (e.g. UF4007 or Schottky) rated above VBUS_max.
Keep the high-side gate-drive loop (HO, VS, and the bootstrap capacitor) as physically small as possible - ideally under 1 cm² of loop area. Place the bootstrap capacitor and diode directly adjacent to pins 6 (VS) and 8 (VB). Use a ground plane on the COM side (pin 4) that ties back to the power-stage ground at a single point. For high dV/dt switching nodes (>5 V/ns), guard the VS trace with a ground pour to prevent capacitive coupling into the floating supply that could cause false HO triggering.
Do not operate the high side without VB charged - if the bootstrap capacitor is depleted (long off-time or 100% duty cycle), the high-side gate will collapse and cause a half-bridge shoot-through. For 100% duty-cycle operation, an isolated DC-DC supply (bootstrap refresh circuit) or charge pump is required. Also, do not exceed VS = -5 V to +600 V; consult Infineon Design Tip DT97-3 for recommended TVS diode selection on the VS node if negative transients beyond -5 V are expected during commutation.
The IRS2101STRPBF in 8-SOIC has a theta_JA of approximately 100-130 C/W depending on PCB copper area (per JEDEC EIA/JESD51 standards). At 5 mA quiescent current and 15 V VCC, the device dissipates only ~75 mW internally, so thermal management is not a concern for the driver itself. However, the adjacent power MOSFETs may heat the PCB locally; ensure the SOIC-8 driver is placed at least 5 mm away from the power-stage heatsink to avoid thermally-induced reliability degradation.
Compliance-Informationen
PBF suffix indicates lead-free and RoHS-compliant. AEC-Q100 grade not qualified; for automotive gate drivers choose IRS2101STRPBF-Q1 or AEC-Q100-qualified Infineon parts.
