K3LK4L40DM-BGCT vs K4A4G165WF-BCTD Vergleich
Detaillierter Direktvergleich von K3LK4L40DM-BGCT von Samsung Electronics und K4A4G165WF-BCTD von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ Aktiv
Spezifikationsvergleich
| Parameter | K3LK4L40DM-BGCT | K4A4G165WF-BCTD |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $40,50 | $8,20 |
| Speichertyp | DRAM (SDRAM component) | DDR4 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | — |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Datenrate | [DATA_NEEDED: Data Rate] | — |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | 0C to +95C |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | Compliant |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| MSL-Level | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Speichergröße | — | 4 Gbit |
| Speicherorganisation | — | 256M x 16 |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| Schnittstelle | — | SSTL-12 |
| Gehäuse | — | FBGA-96 (PBGA96) |
| Eigenschaften | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |
| Refresh | — | Self-refresh and auto-refresh supported |