K3LK4L40DM-BGCT vs K4A4G165WF-BCTD 对比
详细并排对比 K3LK4L40DM-BGCT 出自 Samsung Electronics 和 K4A4G165WF-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 量产中
规格对比
| 参数 | K3LK4L40DM-BGCT | K4A4G165WF-BCTD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $40.50 | $8.20 |
| 存储器类型 | DRAM (SDRAM component) | DDR4 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | — |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| 数据速率 | [DATA_NEEDED: Data Rate] | — |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | 0C to +95C |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | Compliant |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| MSL 等级 | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| 存储容量 | — | 4 Gbit |
| 存储组织 | — | 256M x 16 |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| 接口 | — | SSTL-12 |
| 封装 | — | FBGA-96 (PBGA96) |
| 特性 | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |
| Refresh | — | Self-refresh and auto-refresh supported |