K3LK4L40DM-BGCT vs K4A4G165WF-BCTD Comparación
Comparación detallada lado a lado de K3LK4L40DM-BGCT por Samsung Electronics y K4A4G165WF-BCTD por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ Activo
Comparación de especificaciones
| Parámetro | K3LK4L40DM-BGCT | K4A4G165WF-BCTD |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | DRAM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $40,50 | $8,20 |
| Tipo de memoria | DRAM (SDRAM component) | DDR4 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | — |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Velocidad de datos | [DATA_NEEDED: Data Rate] | — |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latencia CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | 0C to +95C |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Estado RoHS | [DATA_NEEDED: RoHS Status] | Compliant |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Nivel MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Tamaño de memoria | — | 4 Gbit |
| Organización de memoria | — | 256M x 16 |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| Interfaz | — | SSTL-12 |
| Encapsulado | — | FBGA-96 (PBGA96) |
| Características | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |
| Refresh | — | Self-refresh and auto-refresh supported |