K9DVGB8U5M vs K9HCG08U1M Vergleich

Detaillierter Direktvergleich von K9DVGB8U5M von Samsung Electronics und K9HCG08U1M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ Aktiv
Samsung Electronics
K9HCG08U1M K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage

K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage

K9HCG08U1M ✓ Aktiv

Spezifikationsvergleich

Parameter K9DVGB8U5M K9HCG08U1M
Marke Samsung Electronics Samsung Electronics
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,05 $0,00
Speichertyp NAND Flash —
Speicherorganisation [DATA_NEEDED: capacity organization] 8G x 8
Schnittstelle Asynchronous x8-bit I/O —
Versorgungsspannung [DATA_NEEDED: VCC range] [DATA_NEEDED: supply voltage]
Gehäuse [DATA_NEEDED: package type and dimensions] TSOP-48 (PDSO48)
Montageart Surface Mount Surface Mount
Page Size [DATA_NEEDED: main page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: erase block size] [DATA_NEEDED: block size]
Read Time (tR) [DATA_NEEDED: page read cycle time] [DATA_NEEDED: read time]
Program Time (tPROG) [DATA_NEEDED: page program time] [DATA_NEEDED: program time]
Erase Time (tBERS) [DATA_NEEDED: block erase time] —
Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: retention specification] —
Betriebstemperatur [DATA_NEEDED: temperature range] -40C to +105C (TA)
Access Interface Signals CLE, ALE, WE, RE, CE, R/B, WP —
Bad Block Management Host-managed (controller ECC and bad-block table required) —
RoHS-Status [DATA_NEEDED: RoHS compliance] —
Memory Technology — MLC NAND Flash
Total Capacity — 64 Gbit
Datenbusbreite — 8 bit
Schnittstellentyp — Asynchronous NAND (multiplexed address/data/command)
Program/Erase Cycles — [DATA_NEEDED: endurance]
Ready/Busy Output — Yes (R/B#)
Die Technology — Samsung E-die (per datasheet family)
Full Ordering Code — K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern