K9DVGB8U5M vs K9HCG08U1M Comparación
Comparación detallada lado a lado de K9DVGB8U5M por Samsung Electronics y K9HCG08U1M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage
K9HCG08U1M ✓ ActivoComparación de especificaciones
| Parámetro | K9DVGB8U5M | K9HCG08U1M |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,05 | $0,00 |
| Tipo de memoria | NAND Flash | — |
| Organización de memoria | [DATA_NEEDED: capacity organization] | 8G x 8 |
| Interfaz | Asynchronous x8-bit I/O | — |
| Tensión de alimentación | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| Encapsulado | [DATA_NEEDED: package type and dimensions] | TSOP-48 (PDSO48) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | [DATA_NEEDED: read time] |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | [DATA_NEEDED: program time] |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: temperature range] | -40C to +105C (TA) |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance] | — |
| Memory Technology | — | MLC NAND Flash |
| Total Capacity | — | 64 Gbit |
| Ancho del bus de datos | — | 8 bit |
| Tipo de interfaz | — | Asynchronous NAND (multiplexed address/data/command) |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |
| Ready/Busy Output | — | Yes (R/B#) |
| Die Technology | — | Samsung E-die (per datasheet family) |
| Full Ordering Code | — | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 |