K9DVGB8U5M vs K9HCG08U1M Comparaison
Comparaison détaillée côte à côte de K9DVGB8U5M par Samsung Electronics et K9HCG08U1M par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage
K9HCG08U1M ✓ ActifComparaison des spécifications
| Paramètre | K9DVGB8U5M | K9HCG08U1M |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,05 | $0,00 |
| Type de mémoire | NAND Flash | — |
| Organisation de la mémoire | [DATA_NEEDED: capacity organization] | 8G x 8 |
| Interface | Asynchronous x8-bit I/O | — |
| Tension d'alimentation | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| Boîtier | [DATA_NEEDED: package type and dimensions] | TSOP-48 (PDSO48) |
| Type de montage | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | [DATA_NEEDED: read time] |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | [DATA_NEEDED: program time] |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range] | -40C to +105C (TA) |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance] | — |
| Memory Technology | — | MLC NAND Flash |
| Total Capacity | — | 64 Gbit |
| Largeur du bus de données | — | 8 bit |
| Type d'interface | — | Asynchronous NAND (multiplexed address/data/command) |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |
| Ready/Busy Output | — | Yes (R/B#) |
| Die Technology | — | Samsung E-die (per datasheet family) |
| Full Ordering Code | — | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 |