K9DVGB8U5M vs K9HCG08U1M 比較
詳細な並列比較: K9DVGB8U5M メーカー: Samsung Electronics および K9HCG08U1M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9DVGB8U5M | K9HCG08U1M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $3.05 | $0.00 |
| メモリタイプ | NAND Flash | — |
| メモリ構成 | [DATA_NEEDED: capacity organization] | 8G x 8 |
| インターフェース | Asynchronous x8-bit I/O | — |
| 電源電圧 | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| パッケージ | [DATA_NEEDED: package type and dimensions] | TSOP-48 (PDSO48) |
| 実装タイプ | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | [DATA_NEEDED: read time] |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | [DATA_NEEDED: program time] |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| 動作温度 | [DATA_NEEDED: temperature range] | -40C to +105C (TA) |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance] | — |
| Memory Technology | — | MLC NAND Flash |
| Total Capacity | — | 64 Gbit |
| データバス幅 | — | 8 bit |
| インターフェースタイプ | — | Asynchronous NAND (multiplexed address/data/command) |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |
| Ready/Busy Output | — | Yes (R/B#) |
| Die Technology | — | Samsung E-die (per datasheet family) |
| Full Ordering Code | — | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 |