MRF6V2300NR1 vs MRF6V2300NR5 Vergleich

Detaillierter Direktvergleich von MRF6V2300NR1 von NXP Semiconductors und MRF6V2300NR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6V2300NR1 MRF6V2300NR1 - 300W, 50V RF Power MOSFET 10-600 MHz | NXP

MRF6V2300NR1 - 300W, 50V RF Power MOSFET 10-600 MHz | NXP

MRF6V2300NR1 ✓ Aktiv
NXP Semiconductors
MRF6V2300NR5 MRF6V2300NR5 - 300W RF Power MOSFET, 10-600 MHz, 50V | NXP

MRF6V2300NR5 - 300W RF Power MOSFET, 10-600 MHz, 50V | NXP

MRF6V2300NR5 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6V2300NR1 MRF6V2300NR5
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $107,50 $118,80
Transistortyp RF Power MOSFET (LDMOS, N-Channel, Enhancement-Mode, Lateral) LDMOS, N-Channel, Enhancement-Mode, Lateral
Drain-Source Voltage (Vdss) 110 V —
Continuous Drain Current (Id) 2.5 mA DC bias reference —
Output Power (Pout) 300 W CW —
Test Frequency 220 MHz 220 MHz
Power Gain 25.5 dB —
Operating Frequency Range 10 MHz to 600 MHz —
Drain Bias Voltage 50 V —
Mode of Operation CW (continuous wave), Class AB —
Package Type TO-270 WB-4 (ceramic, flanged, single-ended) —
Input Matching Unmatched Unmatched (external matching required)
Output Matching Unmatched —
Technology Lateral MOSFET (LDMOS-like) Lateral Double-Diffused MOS (LDMOS)
Montageart Surface / flange-mount with screws Chassis / Heatsink Mount
RoHS-Status [DATA_NEEDED: rohs status] [DATA_NEEDED: RoHS status]
Betriebstemperatur [DATA_NEEDED: junction/case temperature range] —
Manufacturer — NXP Semiconductors (formerly Freescale)
Drain-Source Voltage (Vdss) Rated — 110 V
Typical Operating Drain Voltage — 50 V
Frequency Range — 10 MHz to 600 MHz
Typical Output Power (CW) — 300 W
Typical Power Gain — 25.5 dB at 220 MHz
Drain Current (Id) — 900 mA (DC bias)
Gehäuse — TO-270 WB-4 (ceramic, air-cavity, bolt-down)
Operating Mode — CW large-signal / driver
Application — Industrial, medical, scientific RF power

Datenblätter & Ressourcen

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