MRF6V2300NR1 vs MRF6V2300NR5 对比
详细并排对比 MRF6V2300NR1 出自 NXP Semiconductors 和 MRF6V2300NR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF6V2300NR1 | MRF6V2300NR5 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $107.50 | $118.80 |
| 晶体管类型 | RF Power MOSFET (LDMOS, N-Channel, Enhancement-Mode, Lateral) | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Drain-Source Voltage (Vdss) | 110 V | — |
| Continuous Drain Current (Id) | 2.5 mA DC bias reference | — |
| Output Power (Pout) | 300 W CW | — |
| Test Frequency | 220 MHz | 220 MHz |
| Power Gain | 25.5 dB | — |
| Operating Frequency Range | 10 MHz to 600 MHz | — |
| Drain Bias Voltage | 50 V | — |
| Mode of Operation | CW (continuous wave), Class AB | — |
| Package Type | TO-270 WB-4 (ceramic, flanged, single-ended) | — |
| Input Matching | Unmatched | Unmatched (external matching required) |
| Output Matching | Unmatched | — |
| Technology | Lateral MOSFET (LDMOS-like) | Lateral Double-Diffused MOS (LDMOS) |
| 安装类型 | Surface / flange-mount with screws | Chassis / Heatsink Mount |
| RoHS 状态 | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| 工作温度 | [DATA_NEEDED: junction/case temperature range] | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (Vdss) Rated | — | 110 V |
| Typical Operating Drain Voltage | — | 50 V |
| Frequency Range | — | 10 MHz to 600 MHz |
| Typical Output Power (CW) | — | 300 W |
| Typical Power Gain | — | 25.5 dB at 220 MHz |
| Drain Current (Id) | — | 900 mA (DC bias) |
| 封装 | — | TO-270 WB-4 (ceramic, air-cavity, bolt-down) |
| Operating Mode | — | CW large-signal / driver |
| Application | — | Industrial, medical, scientific RF power |