MRF6V2300NR1 vs MRF6V2300NR5 Comparação

Comparação detalhada lado a lado de MRF6V2300NR1 por NXP Semiconductors e MRF6V2300NR5 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF6V2300NR1 MRF6V2300NR1 - 300W, 50V RF Power MOSFET 10-600 MHz | NXP

MRF6V2300NR1 - 300W, 50V RF Power MOSFET 10-600 MHz | NXP

MRF6V2300NR1 ✓ Ativo
NXP Semiconductors
MRF6V2300NR5 MRF6V2300NR5 - 300W RF Power MOSFET, 10-600 MHz, 50V | NXP

MRF6V2300NR5 - 300W RF Power MOSFET, 10-600 MHz, 50V | NXP

MRF6V2300NR5 ✓ Ativo

Comparação de especificações

Parâmetro MRF6V2300NR1 MRF6V2300NR5
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $107,50 $118,80
Tipo de transistor RF Power MOSFET (LDMOS, N-Channel, Enhancement-Mode, Lateral) LDMOS, N-Channel, Enhancement-Mode, Lateral
Drain-Source Voltage (Vdss) 110 V —
Continuous Drain Current (Id) 2.5 mA DC bias reference —
Output Power (Pout) 300 W CW —
Test Frequency 220 MHz 220 MHz
Power Gain 25.5 dB —
Operating Frequency Range 10 MHz to 600 MHz —
Drain Bias Voltage 50 V —
Mode of Operation CW (continuous wave), Class AB —
Package Type TO-270 WB-4 (ceramic, flanged, single-ended) —
Input Matching Unmatched Unmatched (external matching required)
Output Matching Unmatched —
Technology Lateral MOSFET (LDMOS-like) Lateral Double-Diffused MOS (LDMOS)
Tipo de montagem Surface / flange-mount with screws Chassis / Heatsink Mount
Status RoHS [DATA_NEEDED: rohs status] [DATA_NEEDED: RoHS status]
Temperatura de operação [DATA_NEEDED: junction/case temperature range] —
Manufacturer — NXP Semiconductors (formerly Freescale)
Drain-Source Voltage (Vdss) Rated — 110 V
Typical Operating Drain Voltage — 50 V
Frequency Range — 10 MHz to 600 MHz
Typical Output Power (CW) — 300 W
Typical Power Gain — 25.5 dB at 220 MHz
Drain Current (Id) — 900 mA (DC bias)
Encapsulamento — TO-270 WB-4 (ceramic, air-cavity, bolt-down)
Operating Mode — CW large-signal / driver
Application — Industrial, medical, scientific RF power

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