MRF6V2300NR1 vs MRF6V2300NR5 비교
다음의 상세 나란히 비교: MRF6V2300NR1 제조: NXP Semiconductors 및 MRF6V2300NR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6V2300NR1 | MRF6V2300NR5 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $107.50 | $118.80 |
| 트랜지스터 유형 | RF Power MOSFET (LDMOS, N-Channel, Enhancement-Mode, Lateral) | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Drain-Source Voltage (Vdss) | 110 V | — |
| Continuous Drain Current (Id) | 2.5 mA DC bias reference | — |
| Output Power (Pout) | 300 W CW | — |
| Test Frequency | 220 MHz | 220 MHz |
| Power Gain | 25.5 dB | — |
| Operating Frequency Range | 10 MHz to 600 MHz | — |
| Drain Bias Voltage | 50 V | — |
| Mode of Operation | CW (continuous wave), Class AB | — |
| Package Type | TO-270 WB-4 (ceramic, flanged, single-ended) | — |
| Input Matching | Unmatched | Unmatched (external matching required) |
| Output Matching | Unmatched | — |
| Technology | Lateral MOSFET (LDMOS-like) | Lateral Double-Diffused MOS (LDMOS) |
| 실장 유형 | Surface / flange-mount with screws | Chassis / Heatsink Mount |
| RoHS 상태 | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| 동작 온도 | [DATA_NEEDED: junction/case temperature range] | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (Vdss) Rated | — | 110 V |
| Typical Operating Drain Voltage | — | 50 V |
| Frequency Range | — | 10 MHz to 600 MHz |
| Typical Output Power (CW) | — | 300 W |
| Typical Power Gain | — | 25.5 dB at 220 MHz |
| Drain Current (Id) | — | 900 mA (DC bias) |
| 패키지 | — | TO-270 WB-4 (ceramic, air-cavity, bolt-down) |
| Operating Mode | — | CW large-signal / driver |
| Application | — | Industrial, medical, scientific RF power |