H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix
Teilenummer: H5AN8G4NAFR-RDC ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $3.2 | $3,20 |
| 10 | $2.95 | $29,50 |
| 100 | $2.7 | $270,00 |
| 500 | $2.48 | $1.240,00 |
| 1.000 | $2.3 | $2.300,00 |
H5AN8G4NAFR-RDC Übersicht
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology for servers, workstations, and embedded computing platforms. Within the memory hierarchy, DDR4 SDRAM sits between the processor caches (SRAM) and storage (SSD/HDD), providing the high-bandwidth, large-density main memory pool. Compared to DDR3, DDR4 lowers the operating voltage from 1.5V to 1.2V, increases bank groups, and raises data rates well beyond 2133 MT/s.
Key characteristics of this device include its 8Gb density organized as 1G x 4, the low 1.2V core supply, and a ball-to-ball JEDEC-standard DDR4 x4 FBGA-78 footprint. As an SDRAM, it uses a differential clock (CK_t/CK_c) with command, address, and data strobe signaling for synchronous operation, as described in the manufacturer datasheet.
The device uses SK hynix CMOS DRAM process technology with 8Gb monolithic die, supporting the large memory density and high bandwidth demanded by main memory subsystems. The -RDC speed-grade suffix designates the certified operating bin; consult the official datasheet for exact timing parameters (CL, tRCD, tRP) of the -RDC bin.
Typical applications include server and data center main memory DIMMs, workstation and desktop PC memory modules, networking and telecom equipment memory, industrial computing, and embedded processor memory subsystems requiring high density per component.
When designing with this component, ensure the memory controller supports the DDR4 x4 organization, follow the datasheet termination and VDDQ decoupling guidance, and verify the speed-grade timing against the controller configuration.
This page synthesizes datasheet information, drop-in alternatives, and practical design notes not found in the standard manufacturer datasheet.
Drop-in-Alternativen für H5AN8G4NAFR-RDC – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit H5AN8G4NAFR-RDC (gleiche Bauform und Footprint) – abweichend in Organization, Package, Interface, RoHS Status, Speed Grade.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
H5AN8G4NAFR-PBC
✅ Drop-In✓ Auf Lager
$3.55 / Stück
Datenblatt ansehen →H5AN8G4NAFR-UHC
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$3.05 / Stück
Datenblatt ansehen →H5AN8G6NAFR-RDC
✅ Drop-In✓ Auf Lager
$3.05 / Stück
Datenblatt ansehen →H5AN8G6NAFR-VKC
✅ Drop-In✓ Auf Lager
$6.25 / Stück
Datenblatt ansehen →H5AN8G8NAFR-RDC
✅ Drop-In✓ Auf Lager
$2.95 / Stück
Datenblatt ansehen →MT40A1G8AG-062E
✅ Drop-In✓ Auf Lager
$3.1 / Stück
Datenblatt ansehen →H5AN8G4NAFR-RDC Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Density | 8Gb |
| Speicherorganisation | 1G x 4 |
| Supply Voltage (VDD) | 1.2 V |
| Gehäuse | FBGA-78 |
| Schnittstelle | Synchronous, differential clock CK_t/CK_c |
| Bank Architecture | DDR4 bank-group architecture |
| Montageart | Surface Mount |
| RoHS-Status | Compliant (Lead-Free) |
| Halogenfrei | Yes |
| Refresh | Self-refresh and auto-refresh per DDR4 SDRAM standard |
| Manufacturer | SK hynix |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 |
H5AN8G4NAFR-RDC fbga-78 Pinbelegungsleitfaden
Pinbelegung für H5AN8G4NAFR-RDC (fbga-78-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für H5AN8G4NAFR-RDC.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
H5AN8G4NAFR-RDC ist geeignet für 6 Anwendungs: Server and Data Center Main Memory, Workstation and Desktop PC Memory, Networking and Telecom Equipment, Embedded Computing and IPC, Test and Measurement Instrumentation, Graphics and Display Processing Memory.
Server and Data Center Main Memory
The H5AN8G4NAFR-RDC is purpose-built for server main memory, where its 8Gb density and x4 organization are the industry-standard building blocks for registered ECC DIMMs (RDIMM/LRDIMM). Eighteen x4 devices form one 72-bit rank including SECDED ECC, and the DDR4 bank-group architecture raises effective bandwidth for virtualized and cloud workloads. Placed on RDIMM PCBs with a register and clock driver such as the NCP81087 class of devices, the 1.2V operation reduces DRAM power versus DDR3 by roughly 20% at comparable bandwidth. The -RDC bin timing must match the SPD data programmed on the module, and per-rank termination follows the JEDEC RDIMM reference design.
Empfohlen
Workstation and Desktop PC Memory
For workstation and desktop UDIMMs, the 8Gb H5AN8G4NAFR-RDC provides high density per component, allowing 16GB dual-rank or 8GB single-rank modules with fewer devices. Its 1.2V DDR4 interface matches standard desktop memory controller specifications, and the FBGA-78 footprint is identical across the SK hynix 8Gb DDR4 family, simplifying second-source qualification. In this application the part runs with the integrated memory controller of the CPU; the SPD EEPROM must be programmed with the -RDC bin timings (per the SK hynix datasheet) so the BIOS configures correct CL, tRCD, and tRP. Eight x8 or eighteen x4 devices per 64-bit module are typical topologies.
Empfohlen
Networking and Telecom Equipment
Routers, switches, and 5G baseband cards use high-density DDR4 as packet buffers and lookup tables, where the H5AN8G4NAFR-RDC's 8Gb density minimizes component count on dense line-card PCBs. The x4 organization suits systems pairing DRAM with network processors that implement 72-bit ECC interfaces, and the 1.2V supply keeps power within the tight thermal budgets of fanless telecom hardware. Designs typically use surface-mount FBGA-78 land patterns per JEDEC, with VDD/VDDQ planes and dense decoupling to handle burst currents during back-to-back read/write bursts. The industrial temperature envelope should be confirmed against the datasheet rating for the deployment environment.
Empfohlen
Embedded Computing and IPC
Industrial PCs, edge servers, and embedded controllers based on Intel Atom, Xeon-D, or ARM server-class SoCs use soldered-down or SO-DIMM DDR4 memory. The H5AN8G4NAFR-RDC fits these designs with its 8Gb density and FBGA-78 footprint, which is compatible with standard DDR4 component land patterns, enabling board-level second sourcing between SK hynix and Micron parts. Its RoHS-compliant, Lead-Free and Halogen-Free construction supports industrial green directives. Memory controller configuration must match the -RDC speed bin, and designers should follow the SoC vendor's DDR4 routing guidelines for length matching and on-die termination settings.
Empfohlen
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers require deep capture memory with sustained high bandwidth to stream digitizer data. The H5AN8G4NAFR-RDC's 8Gb capacity and DDR4 bandwidth make it suitable for acquisition memory pools arranged as multiple x4 devices in parallel ranks, giving instruments multi-gigabyte record lengths. The 1.2V rails simplify power-tree design in dense chassis, and the standardized FBGA-78 footprint allows memory upgrades and second sourcing without PCB respins. Designs should budget for controller refresh overhead and use the SK hynix datasheet timing parameters for the -RDC bin when configuring the memory interface.
Empfohlen
Graphics and Display Processing Memory
While dedicated GDDR5/GDDR6 dominates high-end graphics, entry-level GPUs, display SoCs, and video-walling controllers use commodity DDR4 as frame buffers and texture memory. The H5AN8G4NAFR-RDC's 8Gb density supports 4K frame buffers with multi-buffering, and its x4 organization lets designers parallelize devices for the wide buses typical of graphics memory controllers (128-bit and wider). The 1.2V operation and FBGA-78 package fit the thermal and space constraints of fanless display systems and smart signage players. Bandwidth planning should account for refresh and command overhead per the DDR4 protocol in the SK hynix datasheet.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für H5AN8G4NAFR-RDC – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | H5AN8G4NAFR-PBC | H5AN8G4NAFR-UHC | H5AN8G6NAFR-RDC | MT40A1G8AG-062E |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Micron Technology |
| Density | 8Gb | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 1G x 4 | 1G x 4 | 1G x 4 | 512M x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Speed Bin | -RD bin | -PB bin | -UH bin | -RD bin | -062E grade |
| RoHS | Compliant (Lead-Free, Halogen-Free) | Compliant | Compliant | Compliant | Compliant |
| Drop-in for x4 ECC DIMM designs | Native (x4) | Yes - same x4 organization | Yes - same x4 organization | No - x8 organization | No - x8 organization |
Wichtigste Unterscheidungsmerkmale
- x4 organization native to ECC server DIMMs (vs. H5AN8G6NAFR-RDC)
- Same die and footprint across speed bins (vs. H5AN8G4NAFR-PBC)
- RoHS + Halogen-Free compliance documented in datasheet title (vs. MT40A1G8AG-062E)
Designhinweise
The H5AN8G4NAFR-RDC operates from a 1.2V VDD/VDDQ supply. Never connect it to a 1.5V DDR3 rail - exceeding the DDR4 absolute maximum ratings (documented in the datasheet's Absolute Maximum DC Ratings section) can permanently damage the die. Provide separate, low-impedance 1.2V planes with bulk plus high-frequency ceramic decoupling near each device; DDR4 burst currents are large and fast, so plane inductance dominates rail droop. Estimated: a single 8Gb device in an active read burst can draw hundreds of milliamps transiently; budget the VRM accordingly per the total device count.
DDR4 x4 interfaces use on-die termination (ODT) and address/command training. Follow the memory controller vendor's routing guide: match trace lengths within the group skew budget, route DQ/DM/DQS as tightly coupled pairs, and configure OT P and OD T settings per the SK hynix datasheet for the -RDC bin. Because the -RDC is a specific speed bin, ensure the controller training algorithm (write leveling, read training, VrefDQ training) supports that bin's timings; using a faster bin in a slower controller design is acceptable, but never configure a controller beyond the certified bin.
Do not mix speed bins within the same rank or channel without derating the entire channel to the slowest bin - mixing H5AN8G4NAFR-RDC and H5AN8G4NAFR-PBC on one bus forces the slowest timing. Also confirm organization before substitution: x4 and x8 parts share the FBGA-78 footprint family but differ in ball functions (DM/TDQS vs UDM/LDM), so an x8 part cannot be dropped onto an x4 land pattern without design review. Verify SPD data matches the installed bin so BIOS/UEFI configures correct CL, tRCD, tRP and tRFC.
Compliance-Informationen
Datasheet title block states Lead-Free and Halogen-Free (RoHS Compliant). REACH and conflict-minerals status not stated in verified data.