H5ANAG8NCR-UHC - 16Gb DDR4 SDRAM x8 | SK hynix | Server Memory
Teilenummer: H5ANAG8NCR-UHC ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.9 | $39,00 |
| 100 | $3.55 | $355,00 |
| 500 | $3.3 | $1.650,00 |
| 1.000 | $3.05 | $3.050,00 |
H5ANAG8NCR-UHC Übersicht
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, part of the memory IC family within the broader semiconductor storage hierarchy. Compared with DDR3, DDR4 lowers the operating voltage, increases bank-group parallelism through 8n prefetch architecture with bank groups, and improves density per die, making it the dominant main-memory technology from roughly 2014 through the DDR5 transition.
Key features of the H5ANAG8NCR family include 16Gb single-die density organized as 2G words of 8 bits, on-die termination (ODT), data mask / DBI support, and bank-group architecture that raises effective bandwidth at a given core frequency. Speed-grade suffixes such as UHC identify the validated operating data rate and latency configuration used by platform vendors in BOM qualification.
At the architectural level, the device uses an 8n prefetch pipeline with four bank groups and internal bank parallelism, enabling high data rates without requiring the DRAM core to run at impractical frequencies. Designers should implement fly-by termination routing and balanced DQ/CA length matching per DDR4 board-design guidelines for signal integrity.
Typical applications include server DIMMs, desktop UDIMMs, industrial computing modules, networking appliances, and storage controllers where 8-bit-wide DDR4 organization is required. The high per-die density reduces component count in high-capacity memory subsystems.
A key design consideration is power integrity: VDD and VPP rails require tight decoupling, and the DDR4 VPP 2.5V rail powers cell arrays independently from the VDD core rail, so both must be sequenced and regulated correctly.
This page synthesizes family cross-references, same-footprint speed-grade alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für H5ANAG8NCR-UHC – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit H5ANAG8NCR-UHC (gleiche Bauform und Footprint) – abweichend in Package, Interface, Organization, RoHS Status, Data Rate.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
H5ANAG8NCR-RDC
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1 / Stück
Datenblatt ansehen →H5ANAG8NCR-PBC
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$9.5 / Stück
Datenblatt ansehen →H5ANAG8NCJR-XNC
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$65.625 / Stück
Datenblatt ansehen →H5ANAG8NCMR-VKC
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$8.05 / Stück
Datenblatt ansehen →H5ANAG8NAMR-UHC
✅ Drop-In✓ Auf Lager
$2.15 / Stück
Datenblatt ansehen →H5ANAG8NCR-UHC Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Density | 16 Gb |
| Speicherorganisation | 2G x 8 |
| Schnittstelle | DDR4 (JEDEC-compatible) |
| Speed Grade | UHC |
| Gehäuse | FBGA-78 |
| Montageart | Surface Mount (BGA) |
| RoHS Code | Yes |
| REACH Compliance | Compliant |
| Part Life Cycle Code | Active |
| Manufacturer | SK hynix Inc. |
H5ANAG8NCR-UHC fbga-78 Pinbelegungsleitfaden
Pinbelegung für H5ANAG8NCR-UHC (fbga-78-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für H5ANAG8NCR-UHC.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
H5ANAG8NCR-UHC ist geeignet für 6 Anwendungs: Server RDIMM/LRDIMM Main Memory, Desktop UDIMM Memory Modules, Industrial Computing and Edge Servers, Networking Appliance Memory, Storage Controllers and SSD Caching, Embedded Graphics and Display Systems.
Server RDIMM/LRDIMM Main Memory
Server memory subsystems rely on 16Gb x8 DDR4 dies like the H5ANAG8NCR-UHC to reach high module capacities (32GB/64GB RDIMMs) with a minimum device count. The 2G x 8 organization lets eight devices populate a 64-bit channel while a ninth device carries ECC, so capacity scales linearly with per-die density. The bank-group DDR4 architecture sustains the bandwidth that virtualized workloads and in-memory databases demand. Placed on a registered module, the device operates behind an RCD that buffers C/A signals; this isolates loading and enables higher data rates. Memory-qualified designs must verify the die revision and speed bin against the platform memory reference list to guarantee training stability across mixed DIMM populations.
Empfohlen
Desktop UDIMM Memory Modules
Consumer desktop platforms use unbuffered DIMMs built from 16Gb x8 DDR4 dies such as the H5ANAG8NCR-UHC, achieving 16GB module capacity with just eight devices. The device operates directly on the memory controller's C/A bus without a register, so JEDEC SPD data and controller ODT/latency programming must match the UHC speed bin exactly. DDR4's lower VDD versus DDR3 reduces module power, while bank-group interleaving preserves bandwidth for gaming and content-creation workloads. Integrators value this die for its balance of density and cost per gigabyte; the same footprint family allows module builders to drop alternative speed grades onto one PCB design and differentiate SKUs purely through SPD programming and bin selection.
Empfohlen
Industrial Computing and Edge Servers
Industrial gateways, edge servers, and factory-automation controllers embed 16Gb x8 DDR4 components like the H5ANAG8NCR-UHC soldered directly on COM Express or SMARC carrier boards. The single 16Gb die reduces BOM count versus four 4Gb parts, improving reliability metrics critical for 24/7 operation. Thermal design matters: DRAM refresh requirements rise above 85C per JEDEC extended-temperature rules, so designers must confirm the device's operating temperature range and derate timing accordingly. RoHS and REACH compliance recorded for this family simplifies certification of industrial products for global markets. The 78-ball FBGA footprint is also shared across SK hynix speed grades, letting industrial vendors dual-source bins without PCB respins.
Empfohlen
Networking Appliance Memory
Routers, switches, and network-security appliances use 16Gb x8 DDR4 devices such as the H5ANAG8NCR-UHC to buffer packet flows, hold route tables, and feed deep packet inspection engines. The x8 organization pairs efficiently with network processors exposing 64-bit or 72-bit (ECC) DDR4 interfaces, and the bank-group architecture sustains the low-latency, bursty access patterns typical of packet processing. Memory subsystem sizing in these systems trades capacity against deterministic latency, so the predictable DDR4 timing of a validated speed bin matters more than peak bandwidth. The active lifecycle status of this SK hynix family supports long procurement commitments required in network equipment service cycles that often exceed seven years.
Empfohlen
Storage Controllers and SSD Caching
Enterprise SSD controllers and RAID-on-chip devices map DDR4 memory such as the H5ANAG8NCR-UHC as metadata cache and FTL (flash translation layer) working memory. A 16Gb x8 die provides 2GB of address space per device, so two devices deliver 4GB of low-latency metadata buffering that keeps SSD read/write latency consistent under heavy queue depths. Because storage controllers run DDR4 at conservative data rates for stability, a mainstream bin like UHC is typically sufficient and cost-effective, avoiding premium pricing for higher bins. Designers must ensure VPP and VDD decoupling meets the controller reference design, since power-rail noise during simultaneous NAND access directly corrupts DRAM data integrity.
Empfohlen
Embedded Graphics and Display Systems
Embedded graphics processors and display SoCs in digital signage, HMI panels, and automotive cluster upgrades use 16Gb x8 DDR4 like the H5ANAG8NCR-UHC for framebuffer memory. The 2GB per device supports multiple 1080p or a single 4K framebuffer with headroom for composition surfaces, while x8 organization keeps trace counts manageable on dense display boards. Framebuffer access is bandwidth-hungry but latency-tolerant, so memory controllers typically enable DDR4 burst-chop and bank-group interleaving to smooth scanout. The 78-ball FBGA reflow soldering suits standard SMT lines used in display-module manufacturing, and RoHS compliance recorded for this family meets global display-product regulations without additional qualification.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für H5ANAG8NCR-UHC – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | H5ANAG8NCR-RDC | H5ANAG8NCJR-XNC | H5ANAG8NAMR-UHC | H5ANAG8NCMR-VKC |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Speed Grade Suffix | UHC | RDC | XNC | UHC | VKC |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active | Active |
Wichtigste Unterscheidungsmerkmale
- 16Gb single-die density halves component count vs 8Gb designs (vs. H5AN8G8NAFR-UHC)
- Same 78-ball FBGA footprint across speed grades enables dual-sourcing (vs. H5ANAG8NCJR-XNC)
- Active lifecycle with multi-variant family availability (vs. H5ANAG8NAMR-UHC)
Designhinweise
DDR4 devices use two power rails: VDD (core/interface, nominally 1.2V-class) and VPP (2.5V-class cell-boost rail). Each rail needs its own bulk and high-frequency decoupling network placed within a few millimeters of the ball assignment; a typical DDR4 design guideline allocates at least one 0.1uF ceramic per pair of power balls plus bulk capacitance per device. Confirm exact VDD/VPP values and tolerances from the SK hynix family datasheet before finalizing the power tree, and implement proper rail sequencing per the controller reference design.
Route C/A, CK, and CS in fly-by topology with series termination at the controller, matching per JEDEC DDR4 routing practice. Keep DQ/DM/DQS nets length-matched within the memory controller's stated skew budget (typically a few mils per 1000 mils of trace) and reference DQ signals to solid ground or VDD planes without crossing splits. Impedance targets of 40-50 ohms single-ended for DQ and ODT-configured buses are standard practice; follow the SK hynix DDR4 board-design appendix for segment-specific guidance.
Substituting speed-grade suffixes without checking the platform memory reference list is the most common DDR4 field failure: a die that supports a higher bin is generally usable at lower rates, but a lower-bin part cannot meet a faster controller timing program. Also, FBGA DDR4 devices cannot be visually inspected or reworked easily - a single marginal solder ball can cause intermittent training failures. Plan X-ray inspection on first-article assemblies and validate memory training margins (read/write eye) at temperature extremes before mass production.
Compliance-Informationen
RoHS Code: Yes and REACH compliance recorded in distributor component data for the H5ANAG8N family (worldwayelec listing). AEC-Q100 qualification not specified for standard DDR4 SDRAM parts.