K4A4G085WE-BCRC - 4Gb DDR4-2400 x8 SDRAM | Samsung
Teilenummer: K4A4G085WE-BCRC ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.84 | $1,84 |
| 10 | $1.75 | $17,50 |
| 100 | $1.62 | $162,00 |
| 500 | $1.48 | $740,00 |
| 1.000 | $1.36 | $1.360,00 |
K4A4G085WE-BCRC Übersicht
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of JEDEC-standard DRAM, sitting in the memory hierarchy above DDR3 and below DDR5. It transfers data on both clock edges at the system memory clock and relies on a memory controller for refresh and command scheduling. DDR4 lowered the operating voltage from 1.5V to 1.2V versus DDR3, cutting dynamic power by roughly 25% while increasing bank-group parallelism through a 4n prefetch architecture.
Key features of the K4A4G085WE-BCRC include a 4-gigabit density organized as 512 megawords x 8 bits, a -BCRC speed grade corresponding to DDR4-2400 with a 0.833 ns clock cycle (CL17 bin), and internal bank groups that allow interleaved access for higher effective bandwidth. The 1.2V VDD/VDDQ operation and E-die process improve power efficiency for embedded and industrial systems.
Architecturally, the device uses the DDR4 bank-group design with multiple independent banks accessed in an interleaved fashion, on-die termination (ODT), and a command/address training framework. Termination, DLL, and read/write leveling registers are configured via mode register sets (MRS), as described in the Samsung DDR4 SDRAM datasheet (Rev. 1.6, 73 pages).
Typical applications include industrial control main memory, network communication equipment line cards, high-performance embedded computing modules, and DRAM repair/replacement on memory modules.
Design-wise, DDR4 requires careful fly-by command/address routing, length-matched data groups, and controller firmware calibration (write leveling, read training) at boot; verify the controller supports the 2400 Mbps timing bin before substitution.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für K4A4G085WE-BCRC – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K4A4G085WE-BCRC (gleiche Bauform und Footprint) – abweichend in Data Rate, Package, Interface, Memory Type, Memory Size.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K4A4G085WG-BCWE
✅ Drop-In✓ Auf Lager
$2.68 / Stück
Datenblatt ansehen →K4A4G085WF-BCWE
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K4A4G085WE-BCWE
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MT40A512M8HX
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
H5AN4G8NCM
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K4A4G085WE-BCRC Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Density | 4 Gbit |
| Speicherorganisation | 512M x 8 |
| Datenrate | 2400 Mbps |
| Clock Cycle Time (tCK) | 0.833 ns |
| Supply Voltage (VDD) | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Core Voltage (VPP) | 2.5 V |
| Gehäuse | FBGA-78 |
| Montageart | Surface Mount |
| Process Node Family | Samsung E-die |
| Schnittstelle | Parallel |
| Bank Groups | 4n prefetch DDR4 architecture |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) |
| RoHS-Status | Compliant (per LCSC listing) |
K4A4G085WE-BCRC fbga-78 Pinbelegungsleitfaden
Pinbelegung für K4A4G085WE-BCRC (fbga-78-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K4A4G085WE-BCRC.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K4A4G085WE-BCRC ist geeignet für 6 Anwendungs: Industrial Control Main Memory, Network Communication Equipment, Embedded Computing Modules (COM/SOM), Memory Module Repair and Replacement, High-Performance Computing / Edge AI Boards, Test, Measurement and Protocol Validation.
Industrial Control Main Memory
The K4A4G085WE-BCRC provides 4 Gbit of main-system memory at 2400 Mbps for industrial controllers, PLCs, and factory automation CPUs. Its 1.2V operation cuts dynamic power roughly 25% versus DDR3 (per Samsung's DDR4 product page), reducing heat load inside sealed industrial enclosures, while the x8 organization gives deep 512M-word addressing per rank. Typically deployed as two to four devices on a soldered-down memory bus fed by an SoC or FPGA memory controller; bank-group interleaving sustains bandwidth for real-time control loops and protocol stacks. The 2400 Mbps rate delivers about 19.2 Gbit/s per device at DDR4-2400, ample for motion control and edge data logging.
Empfohlen
Network Communication Equipment
Switches, routers, and 5G small-cell line cards use the K4A4G085WE-BCRC for packet buffering and lookup tables. The 2400 Mbps data rate and DDR4 bank-group architecture provide the random-access throughput needed for queue management, while 4 Gbit per device lets designers scale buffering depth by paralleling devices on shared chip selects. The 1.2V VDD/VDDQ rails ease thermal design in 1U fanless network appliances. NTCLCR's product description explicitly targets network communication equipment for this part. Designers should budget ODT settings and fly-by C/A routing to maintain signal integrity across the multi-drop memory bus.
Empfohlen
Embedded Computing Modules (COM/SOM)
Soldered-down DDR4 on SoMs and embedded compute modules is a primary use case for the K4A4G085WE-BCRC. Its E-die process and FBGA-78 footprint allow two devices (1 GB total at 64-bit width with eight x8 devices, or 1 GB at 32-bit with four) directly on the module PCB, eliminating SODIMM connectors for vibration-prone and space-constrained platforms such as edge AI gateways and medical portable instruments. The 2400 Mbps speed matches mainstream embedded SoC memory controllers, and 1.2V operation keeps module power budgets low. PlatformBring-up requires DDR4 write leveling and read training firmware per the Samsung Rev. 1.6 datasheet.
Empfohlen
Memory Module Repair and Replacement
RAM repair services and module rework shops use the K4A4G085WE-BCRC to replace failed x8 DDR4-2400 devices on UDIMM, SODIMM, and soldered-down assemblies. Because it matches the standard JEDEC FBGA-78 x8 footprint, it can replace Samsung W-die/G-die equivalents (K4A4G085WF-BCWE, K4A4G085WG-BCWE) and, with controller re-training, the Micron MT40A512M8HX and SK Hynix H5AN4G8NCM equivalents. Successful BGA rework requires proper profile-controlled hot-air or IR reflow and post-replacement memory test ( MemTest86 or in-cabinet POST) to confirm training margins. The aichiplink technical guide specifically covers FBGA-78 pinout identification for repair workflows.
Empfohlen
High-Performance Computing / Edge AI Boards
GPU companion boards, vision processing platforms, and edge AI accelerators use multiple K4A4G085WE-BCRC devices to assemble 32-bit or 64-bit memory buses. At DDR4-2400 a single x8 device sustains roughly 2.4 GB/s, so an eight-device 64-bit bus delivers about 19.2 GB/s for feature-map and frame buffering. The 1.2V rail and 2.5V VPP are typically generated from onboard point-of-load converters, and the FBGA-78 package supports dense two-sided module assembly. For AI workloads with high random-access traffic, DDR4 bank-group interleaving helps hide row-activation latency versus single-bank DDR3 designs.
Empfohlen
Test, Measurement and Protocol Validation
Bench instruments, logic analysis platforms, and DDR4 protocol validation fixtures use the K4A4G085WE-BCRC as a reference device for controller bring-up and eye-margin characterization. Its documented Rev. 1.6 AC timing tables (including the section 13.3 clock specification published in the datasheet excerpt) provide a stable electrical target for validating write leveling, read training, and ODT sweeps. Engineering teams also use this device to qualify alternate DRAM vendors, since swapping in the Micron MT40A512M8HX or SK Hynix H5AN4G8NCM equivalents on the same fixture exposes sensitivity to die-level timing variation.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K4A4G085WE-BCRC – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K4A4G085WG-BCWE | K4A4G085WF-BCWE | MT40A512M8HX | H5AN4G8NCM |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
Wichtigste Unterscheidungsmerkmale
- Samsung E-die process maturity for industrial sourcing (vs. K4A4G085WG-BCWE)
- x8 organization with deep per-rank addressing (vs. K4A4G165WG-BCWE)
- Second-source availability at identical footprint (vs. MT40A512M8HX)
Designhinweise
Route the DDR4 command/address bus in fly-by topology to all K4A4G085WE-BCRC devices with 40-ohm controlled impedance, and match DQ/DM/DQS byte lanes within +/-25 mil per group. Keep the memory bus on layers adjacent to a solid ground plane; avoid splitting reference planes under data groups. Place 0.1 uF decoupling per VDD/VDDQ ball cluster plus bulk capacitance at the regulator output to handle simultaneous switching currents at 2400 Mbps.
The most common failure mode on first bring-up is skipping or misconfiguring DDR4 initialization: ZQ calibration, write leveling, read training, and mode register programming must all complete in the datasheet-specified order. Also remember this device needs a separate 2.5V VPP rail; applying only 1.2V will leave the word-line charge pump unpowered and the device will not function. Verify the controller supports the -BC (DDR4-2400) timing bin including tCK 0.833 ns.
Estimated: a single 4Gb DDR4-2400 device drawing typical DDR4-class current on a 1.2V rail dissipates on the order of a few hundred milliwatts; for a 4-device bus budget roughly 1-2 W total (input assumptions: 2400 Mbps, 50% read/write mix, active standby duty). Size the 1.2V converter accordingly and sequence VPP (2.5 V) with VDD per the Samsung Rev. 1.6 datasheet power-up requirements to avoid latch-up during startup.
Compliance-Informationen
RoHS compliance and lead-free status per LCSC and Lisleapex distributor listings. REACH, halogen-free, and conflict-minerals declarations not found in provided data - request Samsung environmental certificates.