Die Speicherpreise ändern sich täglich – die Preise auf der Website können hinter dem Markt zurückbleiben. Bitte senden Sie eine RFQ für das aktuellste Angebot.
Aktuellen Preis anfragen →
Samsung Electronics

K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung

Teilenummer: K4A8G165WC-BCPB ✓ Aktiv
Auf Lager Versand in 1–3 Werktagen
1.2 V Vdss 96-ball FBGA (TFBGA) Package DDR4 SDRAM (volatile DRAM) Memory
Ab $1.31 USD / Stück
MOQ: 1 |
Preis aktualisiert: 2026-09-03
Mengenpreise
Menge Stückpreis Gesamt
1 $1.74 $1,74
10 $1.66 $16,60
100 $1.55 $155,00
500 $1.42 $710,00
1.000 $1.31 $1.310,00
ℹ️ Alle Preise sind in USD

K4A8G165WC-BCPB Übersicht

The Samsung K4A8G165WC-BCPB is an 8 Gb DDR4 SDRAM organized as 512M x 16, operating at the DDR4-2133 data rate on a 1.2 V supply (1.14 V to 1.26 V operating range), packaged in a 96-ball FBGA (TFBGA) surface-mount package. It is built on Samsung's C-die (1Y nm class) process and implements the JEDEC DDR4 SDRAM standard.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, sitting within the broader hierarchy of volatile memory -> DRAM -> synchronous DRAM -> DDR SDRAM -> power-management-intensive main-memory ICs. Compared with DDR3, DDR4 lowers the operating voltage from 1.5 V to 1.2 V, doubles bank groups for higher bandwidth, and adds features such as bank group architecture, DLL-on/off modes, and per-DRAM addressability.

Key features of the K4A8G165WC-BCPB include the wide x16 data interface, which simplifies controller routing for embedded designs; auto precharge and asynchronous reset functions; CRC and parity support on critical signals; ZQ calibration for output driver impedance; dynamic on-chip termination (ODT); and a data mask (DM) function for partial writes. The 1.2 V rail reduces system power roughly 25% versus equivalent DDR3 solutions.

Technically, the device uses internal bank groups that allow interleaved accesses for higher effective bandwidth, a programmable DLL for output timing alignment, and programmable CAS latency appropriate to the 2133 Mbps/pin class. The 96-ball FBGA lead-free package measures approximately 7.5 mm x 10 mm x 0.8 mm and suits high-density soldered-down memory subsystems.

Typical applications include embedded industrial controllers, networking equipment line cards, set-top boxes, and FPGA-based processing systems that require soldered 8 Gb DDR4 with a 16-bit data bus, such as Xilinx Zynq UltraScale+ or AMD/Intel embedded platforms.

Design consideration: DDR4 fly-by routing requires proper on-die termination tuning, length-matched address/command groups, and VTT termination supply design; verify the controller supports the x16 organization, since x8 modules use a different 78-ball footprint.

This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Prices as of 2026-09-04.

Drop-in-Alternativen für K4A8G165WC-BCPB – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.

Varianten dieser Serie

Modelle derselben Serie, die drop-in-kompatibel sind mit K4A8G165WC-BCPB (gleiche Bauform und Footprint) – abweichend in Package, Data Rate, Operating Temperature, Interface, Memory Type.

Samsung Electronics
Package: 96-ball FBGA (TFBGA-96)
Operating Temperature: 0°C to 85°C
Vergleichen mit K4A8G165WC-BCPB →
Samsung Electronics
Package: 96-ball FBGA (PBGA96)
Data Rate: 2400 Mbps (PC4-19200)
Operating Temperature: -40C to +95C
Vergleichen mit K4A8G165WC-BCPB →
Samsung Electronics
Package: 96-ball FBGA
Data Rate: 2666 Mbps/pin (PC4-2666)
Operating Temperature: 0°C to +95°C (TC)
Vergleichen mit K4A8G165WC-BCPB →
Samsung Electronics
Package: 96FBGA
Data Rate: 3200 Mbps
Operating Temperature: 0C to +85C
Vergleichen mit K4A8G165WC-BCPB →
Samsung Electronics
Package: 96-ball FBGA (9mm x 13mm)
Data Rate: 2400 Mbps
Operating Temperature: 0°C to +95°C (case)
Vergleichen mit K4A8G165WC-BCPB →
Samsung Electronics
Package: 96FBGA (96-ball Fine-Pitch Ball Grid Array)
Data Rate: 2666 Mbps (DDR4-2666)
Memory Type: DDR4 SDRAM
Vergleichen mit K4A8G165WC-BCPB →
Samsung Electronics
Package: 96FBGA
Data Rate: 2666 Mbps (DDR4-2666)
Memory Type: DDR4 SDRAM
Vergleichen mit K4A8G165WC-BCPB →
Samsung Electronics
Package: 96-FBGA
Data Rate: 3200 Mbps
Interface: Differential (CK, /CK)
Vergleichen mit K4A8G165WC-BCPB →
Samsung Electronics
Package: FBGA-96
Data Rate: 3200 Mbps
Memory Type: Volatile DRAM (DDR4 SDRAM)
Vergleichen mit K4A8G165WC-BCPB →

Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:

K4A8G165WB-BCPB

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA (TFBGA)
8 Gb · 512M x 16 · 2133 Mbps (PC4-17000) · 1.2 V (1.14 V to 1.26 V) · 0°C to 85°C · 96-ball FBGA (TFBGA-96) · 8 (BL8) · Sequential and Interleave

✓ Auf Lager

$2.3 / Stück

Datenblatt ansehen →

K4A8G165WC-BCTD

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA (TFBGA)
DDR4 SDRAM · 8 Gb · 512M x 16 · 2666 Mbps (DDR4-2666) · 1.2 V · 1.14 V to 1.26 V · 1.333 GHz · 0C to +95C

✓ Auf Lager

$41.2 / Stück

Datenblatt ansehen →

K4A8G165WC-BCRC

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA (TFBGA)
DDR4 SDRAM · 8 Gb · 512M x 16 · 2400 Mbps · 1.2 V (1.14V to 1.26V) · 2.5 V · 0°C to +95°C (case) · 96-ball FBGA (9mm x 13mm)

✓ Auf Lager

$23 / Stück

Datenblatt ansehen →

K4A8G165WC-BCWE

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA (TFBGA)
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · 2.5 V · 0°C to +95°C · 96-FBGA

✓ Auf Lager

$38 / Stück

Datenblatt ansehen →

K4A8G165WB-BCTD

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA (TFBGA)
DDR4 SDRAM · 512M x 16 · 8 Gb · 2666 Mbps/pin (PC4-2666) · 1.2 V · 96-ball FBGA · 0°C to +95°C (TC)

✓ Auf Lager

$37 / Stück

Datenblatt ansehen →

K4A8G165WB-BCRC

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA (TFBGA)
DDR4 SDRAM (DRAM, volatile) · 8 Gb (1 GB) · 512M x 16 · 2400 Mbps (PC4-19200) · 1.2 V (1.14 V to 1.26 V) · CMOS DRAM, Samsung 8Gb B-die · 96-ball FBGA (PBGA96) · 0.8 mm

✓ Auf Lager

$12.57 / Stück

Datenblatt ansehen →

K4A8G165WB-BCWE

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA (TFBGA)
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · 19 ns · Parallel · 96FBGA

✓ Auf Lager

$6.55 / Stück

Datenblatt ansehen →

K4A8G165WC-BCPB Grenzwerte & elektrische Eigenschaften

Speichertyp DDR4 SDRAM (volatile DRAM)
Speichergröße 8 Gb
Memory Organization 512M x 16
Datenrate DDR4-2133 (2133 Mbps/pin)
Versorgungsspannung 1.2 V
Operating Voltage Range 1.14 V to 1.26 V
Schnittstelle DDR4 (16-bit data bus)
Gehäuse 96-ball FBGA (TFBGA)
Die Generation C-die (1Y nm class)
Montageart Surface Mount
Betriebstemperatur 0C to +95C
Eigenschaften Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask
Termination On-die termination (ODT), dynamic
RoHS-Status Compliant
Standard JEDEC DDR4 SDRAM

K4A8G165WC-BCPB 96-ball fbga (tfbga) Pinbelegungsleitfaden

Pinbelegung für K4A8G165WC-BCPB (96-ball fbga (tfbga)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.

Pinbelegungsdiagramm für K4A8G165WC-BCPB im 96-ball fbga (tfbga)-Gehäuse

Keine detaillierten Pinbelegungsdaten verfügbar für K4A8G165WC-BCPB.

Siehe die Datenblatt für die vollständige Pin-Konfiguration.

Typische Anwendungen

K4A8G165WC-BCPB ist geeignet für 6 Anwendungs: Embedded Industrial Controllers, Networking Equipment Line Cards, FPGA-Based Processing Systems, Set-Top Boxes and Smart Home Gateways, Test and Measurement Instrumentation, Automotive-Adjacent Embedded Gateways (Industrial Grade).

🏭

Embedded Industrial Controllers

Industrial PLCs and edge controllers need soldered, high-density main memory with long-term availability. The K4A8G165WC-BCPB provides 8 Gb in a single 512M x16 chip at 1.2 V, cutting memory power versus DDR3 by roughly 25%, and its 96-ball FBGA package survives vibration better than SODIMM modules. Placed on a fly-by or matched-length DDR4 bus with dynamic ODT and ZQ calibration enabled, it sustains DDR4-2133 throughput for real-time control data logging. The 0C to +95C operating range covers typical industrial enclosure conditions, and the x16 bus halves component count versus x8, reducing BOM risk.

🌐

Networking Equipment Line Cards

Switch and router line cards use soldered DDR4 for packet buffers, routing tables, and control-plane memory. The K4A8G165WC-BCPB's 2133 Mbps/pin data rate delivers the bandwidth needed for queue management, while CRC support improves data integrity on high-availability links and the asynchronous reset function simplifies system-level fault recovery. Its 96-ball FBGA footprint allows multiple chips to be stacked on a matched-length bus for larger buffers. Dynamic ODT termination reduces signal-integrity tuning effort on multi-drop topologies common in networking backplane-adjacent designs.

🔧

FPGA-Based Processing Systems

FPGA image-processing and data-acquisition systems require large on-board frame buffers. The K4A8G165WC-BCPB's x16 organization lets a single chip provide a 16-bit DDR4 interface, simplifying FPGA bank placement versus two x8 devices. At DDR4-2133, one chip delivers roughly 4.2 GB/s of peak bandwidth, sufficient for multi-stream video line buffering. Enable the memory controller's ZQ calibration and train at board bring-up; use the data mask function for partial frame writes to avoid read-modify-write overhead on video payloads.

📺

Set-Top Boxes and Smart Home Gateways

IPTV set-top boxes and home gateways run rich UI stacks and video pipelines that need gigabyte-class soldered memory. The K4A8G165WC-BCPB's 8 Gb density in one FBGA saves board area versus multiple lower-density chips, and its 1.2 V rail aligns with energy-efficiency targets for always-on consumer equipment. DDR4-2133 bandwidth supports simultaneous 4K decode buffering and network traffic. The device's auto precharge function improves page-hit efficiency for streaming access patterns, and RoHS compliance keeps consumer certification straightforward.

🖥️

Test and Measurement Instrumentation

Oscilloscope, logic analyzer, and data-recorder front ends capture long acquisition records that overflow on-chip SRAM, so soldered DDR4 is used for deep capture memory. The K4A8G165WC-BCPB offers 8 Gb per chip at DDR4-2133, enabling multi-gigasample streaming architectures with sequential burst writes. ZQ calibration keeps output impedance accurate over temperature, protecting eye margins on long PCB traces typical of instrument backplanes. The asynchronous reset input allows the host to recover the memory subsystem without a full power cycle between captures.

🚗

Automotive-Adjacent Embedded Gateways (Industrial Grade)

Telematics gateways, fleet recorders, and off-highway equipment controllers use industrial-grade soldered DDR4 rather than AEC-Q100 memory. The K4A8G165WC-BCPB suits these designs where 0C to +95C operation is acceptable, providing 8 Gb for map, log, and communication buffering at DDR4-2133. The 96-ball FBGA's soldered attachment resists shock and vibration better than connectors, and the low 1.2 V rail reduces total power draw in battery-backed or energy-harvesting nodes. Verify the wider automotive temperature requirement before using it inside the passenger compartment ECU domain.

What is the K4A8G165WC-BCPB?
The K4A8G165WC-BCPB is a Samsung 8 Gb DDR4 SDRAM organized as 512M x 16, rated for DDR4-2133 operation on a 1.2 V supply, in a 96-ball FBGA package. According to Samsung's official datasheet, it is a C-die DDR4 device supporting auto precharge, CRC, ZQ calibration, dynamic ODT, and data mask functions, intended for soldered-down main-memory applications.
What is the price of K4A8G165WC-BCPB?
The K4A8G165WC-BCPB is priced from approximately $1.74 per unit at LCSC as of 2026-09-04, with volume discounts at higher quantities. Prices vary by distributor and stock position; XAIPART lists tiered pricing at 1/10/100/500/1000-piece breaks. Always request a current quote, since DRAM spot pricing can move significantly week to week.
Where to buy K4A8G165WC-BCPB online?
The K4A8G165WC-BCPB is available in stock at LCSC (from $1.7421 as of 2026-09-04), JLCPCB assembly, Ampheo, Win Source, Sourcengine, and via Findchips-authorized distributors. XAIPART also offers this part with datasheet access and BOM support. For production volumes, request quotes from multiple authorized sources to ensure traceability and the best lead time.
Is K4A8G165WC-BCPB in stock?
Yes, LCSC lists the K4A8G165WC-BCPB as in stock as of 2026-09-04, and JLCPCB shows it available for PCB assembly. However, DDR4 component stock moves quickly, so confirm live availability at checkout. For large production quantities, authorized distributors may show factory lead times rather than shelf stock.
What is the best drop-in replacement for K4A8G165WC-BCPB?
The best drop-in replacements are same-family Samsung parts on the same C-die silicon: K4A8G165WB-BCPB, K4A8G165WC-BCTD, K4A8G165WC-BCRC, and K4A8G165WC-BCWE. These share the identical 96-ball FBGA footprint and 512M x16 organization. Verify the speed grade your controller requires, since the suffix letters encode data-rate and CL differences per the Samsung ordering-information table.
What is the difference between K4A8G165WC-BCPB and K4A8G165WB-BCPB?
The K4A8G165WC-BCPB uses Samsung's newer C-die silicon while the K4A8G165WB-BCPB uses the B-die generation; both are 8 Gb 512M x16 DDR4 in 96-ball FBGA with the same footprint. Electrical specifications such as voltage range (1.14 V to 1.26 V) and features are essentially equivalent, so the WB part is typically a pin-compatible substitute after datasheet timing verification.
K4A8G165WC-BCPB vs K4A8G165WC-BCTD - which is better?
Both are 8 Gb x16 C-die DDR4 in the same 96-ball FBGA package; the difference is the speed grade encoded by PB versus TD. Choose the grade that matches your memory controller timing requirements and your validated DRAM training settings. For new designs targeting 2133-class performance, the BCPB suits; BCTD suits designs validated at its grade. Price and stock may favor either at any given time.
What is the best Micron or SK hynix equivalent for K4A8G165WC-BCPB?
Because DDR4 is a JEDEC standard, an 8 Gb x16 DDR4 from Micron or SK hynix uses the same ballout and drops onto the same 96-ball FBGA footprint. Industry cross-references such as etei.com list Micron MT40A-series and SK hynix H5AN8G6-series 8 Gb DDR4 as equivalents. However, you must verify the exact x16 organization, speed grade, and package suffix against the current manufacturer datasheet before qualifying a cross-brand swap.
Can K4A8G165WC-BCPB replace K4A8G085WC-BCPB?
No, not directly. The K4A8G085WC-BCPB is an 8 Gb DDR4 organized as 1G x 8 in a 78-ball FBGA, while the K4A8G165WC-BCPB is 512M x 16 in a 96-ball FBGA. The different ballout and data-bus width require a complete PCB redesign, per Samsung's migration guidance. Only x16, 96-ball 8 Gb parts are drop-in compatible with the K4A8G165WC-BCPB.
Where to download the K4A8G165WC-BCPB datasheet PDF?
The official datasheet PDF is available from Samsung Semiconductor at semiconductorsamsung.com/datasheet/semiconductorsamsung/K4A8G165WC-BCPB.pdf. Mirror copies are hosted on alldatasheet.com and LCSC product page C2920131. The Samsung datasheet is an abstract of the full JEDEC DDR4 specification; common features are covered in Samsung's DDR4 SDRAM Device Operation & Timing Diagram document.
What are the key specifications of K4A8G165WC-BCPB engineers should know?
Key specifications: 8 Gb density organized 512M x 16; DDR4-2133 data rate; 1.2 V nominal supply (1.14 V to 1.26 V); 96-ball FBGA lead-free package; 0C to +95C operating temperature; C-die silicon; features include auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic on-die termination, and data mask. These figures come from the Samsung datasheet and distributor listings as of 2026-09-04.
What voltage does the K4A8G165WC-BCPB require?
The K4A8G165WC-BCPB requires a 1.2 V nominal VDD supply with an allowed operating range of 1.14 V to 1.26 V, per the Samsung C-die DDR4 datasheet. DDR4's reduced voltage versus DDR3's 1.5 V cuts memory subsystem power by roughly 25%. Design the VDD rail with tight regulation, bulk and decoupling capacitance, and a separate VTT termination supply per JEDEC DDR4 design practice.
Is the K4A8G165WC-BCPB RoHS compliant?
Yes, the K4A8G165WC-BCPB is RoHS compliant and supplied in a lead-free 96-ball FBGA package, consistent with current Samsung DDR4 production. Distributor listings including LCSC and JLCPCB list it as RoHS-compliant for lead-free assembly. REACH and halogen-free declarations should be confirmed via Samsung's official environmental documentation for formal compliance submissions.
Can the K4A8G165WC-BCPB be used with Zynq UltraScale+ MPSoC?
Yes, the K4A8G165WC-BCPB is well suited to Xilinx Zynq UltraScale+ MPSoC designs that use the PS DDR controller with a 16-bit DDR4 interface. Its x16 organization halves component count versus x8 at the same bus width, and DDR4-2133 matches the controller's mid-range speed targets. Use AMD/Xilinx memory-controller MIG-style validation and run DRAM training to confirm timing closure on your PCB stackup.
Is K4A8G165WC-BCPB the same as K4A8G165WC-BCWE?
No, they are close family members but not identical. Both are Samsung 8 Gb 512M x16 C-die DDR4 SDRAM in 96-ball FBGA with the same footprint, but the PB and WE suffixes denote different speed/CL grades per Samsung's ordering code. One can often substitute the other after verifying that the suffix grade meets or exceeds the controller's required data rate and latency settings.

Technische Referenzdaten für K4A8G165WC-BCPB – Vergleich, Designhinweise und Compliance-Informationen.

Auswahlhilfe

Choose the K4A8G165WC-BCPB when you need a soldered 8 Gb DDR4 with a 16-bit data bus at DDR4-2133-class speed and the best current price/availability, as verified at LCSC as of 2026-09-04. Choose K4A8G165WC-BCTD or K4A8G165WC-BCWE if your controller was validated at a higher speed grade and you need the extra timing margin, accepting their typically higher cost. Choose the K4A8G165WB-BCPB (B-die) only if your design is already validated on B-die silicon or BCPB stock dries up - it is pin-compatible and identically organized. Avoid x8 parts (K4A8G085WC series) for drop-in substitution: they use a different 78-ball package and require a PCB redesign. For automotive interior ECUs requiring wider temperature ranges, select a dedicated automotive-grade DDR4 instead of this 0C to +95C industrial/consumer-grade device.

Vergleich mit Alternativen

Parameter Dieses Produkt K4A8G165WB-BCPB K4A8G165WC-BCTD K4A8G165WC-BCRC K4A8G165WB-BCWE
Package 96-ball FBGA (TFBGA) 96-ball FBGA - same 96-ball FBGA - same 96-ball FBGA - same 96-ball FBGA - same
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Memory Size 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb
Organization 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16
Supply Voltage 1.2 V (1.14-1.26 V) 1.2 V (1.14-1.26 V) 1.2 V (1.14-1.26 V) 1.2 V (1.14-1.26 V) 1.2 V (1.14-1.26 V)
Die Generation C-die B-die C-die C-die B-die
Speed Grade (suffix) PB (DDR4-2133 class) PB (DDR4-2133 class) TD (higher grade) RC (lower grade) WE (higher grade)

Wichtigste Unterscheidungsmerkmale

  • Newer C-die silicon generation (vs. K4A8G165WB-BCPB)
  • Lowest quoted price among verified family members (vs. K4A8G165WC-BCTD)
  • x16 organization halves component count (vs. K4A8G085WC-BCPB)

Designhinweise

Route DDR4 address/command/control as a fly-by topology with length-matched traces and tune write leveling and read training in the controller. The K4A8G165WC-BCPB's dynamic ODT and ZQ calibration help maintain eye margins at DDR4-2133, but you must still control trace impedance (40-50 ohm single-ended) and keep data-group skew within controller specifications. Run full DRAM training at board bring-up for every PCB stackup revision, since impedance changes shift the trained delays.

The device operates at 1.2 V nominal (1.14 V to 1.26 V) with separate VDD, VDDQ, and VPP rails per JEDEC DDR4 practice. Estimated: at DDR4-2133 with moderate utilization, a single 8 Gb x16 chip draws on the order of a few hundred milliwatts; use a dedicated buck regulator such as the TPS54218 for VDD/VDDQ and a proper VTT termination supply with bulk capacitance at the package. Keep rail ripple below the JEDEC DDR4 tolerance band to avoid refresh errors.

The most common substitution error is mixing organizations: the K4A8G085WC series (x8) uses a 78-ball FBGA that is physically incompatible with the 96-ball footprint of this x16 part. Also verify the speed-grade suffix (PB/RC/TD/WE) against your controller's validated timing table before BOM swaps, and do not assume B-die (WB family) timing settings carry over unchanged to C-die (WC family) silicon even when the footprint is identical.

Place the 96-ball FBGA within 50 mm of the controller where possible, keep the DRAM on a solid reference plane, and reserve space for series termination resistors on address/command nets. For multi-chip topologies, use fly-by routing of address/command with daisy-chained ODT, and length-match data groups per byte lane. Provide thermal relief via the PCB since FBGA packages dissipate heat through the ball field.

Compliance-Informationen

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Bleifrei
Yes
Halogenfrei
Unknown
Konfliktmineralien
Unknown

RoHS compliance and lead-free FBGA package per distributor listings (LCSC, JLCPCB). REACH, halogen-free, and conflict-minerals declarations should be confirmed via Samsung's official environmental documentation.

Daten verifiziert am: 2026-09-04 – Daten geprüft und kuratiert vom Bauteil-Engineering-Team von XAIPART

Ähnliche Suchanfragen

K4A8G165WC-BCPB K4A8G165WC-BCPB datasheet PDF Samsung K4A8G165WC-BCPB price 8Gb DDR4 512Mx16 96-ball FBGA K4A8G165WC-BCPB drop-in replacement K4A8G165WC-BCTD vs K4A8G165WC-BCPB Micron equivalent K4A8G165WC-BCPB DDR4 SDRAM FPGA frame buffer memory buy K4A8G165WC-BCPB in stock what is DDR4 x16 8Gb memory chip K4A8G165WC-BCPB pinout FBGA-96 1.2V DDR4-2133 embedded memory IC

Verwandte Bauteile & Begriffe

Samsung Electronics K4A8G165WC-BCPB K4A8G165WB-BCPB K4A8G165WC-BCTD K4A8G165WC-BCRC K4A8G165WC-BCWE DDR4 SDRAM DRAM volatile memory JEDEC DDR4 standard 96-ball FBGA TFBGA surface mount RoHS 512M x 16 DDR4-2133 on-die termination ZQ calibration C-die 1Y nm process FPGA frame buffering networking line card industrial controller PSRR-free digital memory rail VTT termination Micron MT40A series
Schnellangebot-RFQ
Geben Sie alle Details an – unser Vertriebsteam antwortet innerhalb von 24 Stunden
Teilenummer Hersteller Gehäuse QTY Zielpreis Gesamt
Gesamt: $0.00 USD
✓
Angebotsanfrage gesendet!

Wir antworten innerhalb von 24 Stunden auf Ihre E-Mail

1
RFQ gesendet
2
Angebot erhalten
3
Bestellung aufgegeben
4
Zahlung
5
Versandt
6
Geliefert
RFQ-Details ansehen