K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
Référence : K4B4G1646D-BYH90 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $10.32 | $1 032,00 |
| 500 | $9.5 | $4 750,00 |
| 1 000 | $8.8 | $8 800,00 |
K4B4G1646D-BYH90 Présentation
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems where high bandwidth and low power are critical.
Key features include programmable CAS latency (CL) and CWL, on-die termination (ODT) using the ODT pin, internal self-calibration via ZQ calibration, and asynchronous reset. The device supports auto precharge, data mask, and dynamic on-chip termination, enhancing signal integrity and simplifying system design. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.
The K4B4G1646D uses a D-die process and is available in a 96-ball FBGA package (ball pitch 0.8mm), providing a compact footprint for space-constrained designs. The device includes a programmable output driver impedance and supports DLL (Delay Locked Loop) for precise timing. It also features a temperature-compensated self-refresh (TCSR) mode to reduce power in standby.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial computing. Its low voltage and high speed make it ideal for battery-powered devices and high-performance computing platforms. The device is also suitable for use in servers and storage systems where reliability and efficiency are paramount.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 2133 Mbps. The ZQ pin requires a 240-ohm resistor to ground for calibration, and the VREFCA and VREFDQ should be properly bypassed.
Alternatives de remplacement direct pour K4B4G1646D-BYH90 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646D-BYH90 (même facteur de forme et même empreinte) — différant par CAS Latency, Supply Voltage, Package, Burst Length, Data Rate.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646D-BYMA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4B4G1646D-BYK0
✅ Remplacement direct✓ En stock
$2.9 / unité
Voir la fiche technique →K4B4G1646D-BFMA
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4B4G1646D-BHMA
✅ Remplacement direct✓ En stock
$2.9 / unité
Voir la fiche technique →K4B4G1646E-BYK000
✅ Remplacement direct✓ En stock
$0.5619 / unité
Voir la fiche technique →K4B4G1646D-BYH90 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 512M x 16 |
| Débit de données | 2133 Mbps/pin |
| Tension d'alimentation | 1.35V (1.283V to 1.45V) |
| I/O Interface | x16 |
| Number of Banks | 8 |
| Boîtier | 96-ball FBGA (TFBGA) |
| Ball Pitch | 0.8 mm |
| Température de fonctionnement | 0°C to +85°C |
| Latence CAS | Programmable (e.g., 11, 12, 13) |
| Burst Length | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (ODT pin) |
| ZQ Calibration | Yes (240-ohm resistor to ground) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Sans halogène | Yes |
Configuration des broches de K4B4G1646D-BYH90
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data I/O 0 |
| Broche A3 | DQ1 — Data I/O 1 |
| Broche A4 | VSS — Ground |
| Broche B1 | VDDQ — I/O power supply |
| Broche B2 | DQ2 — Data I/O 2 |
| Broche B3 | DQ3 — Data I/O 3 |
| Broche B4 | VSSQ — I/O ground |
| Broche C1 | VREFCA — Reference voltage for command/address |
| Broche C2 | DQ4 — Data I/O 4 |
| Broche C3 | DQ5 — Data I/O 5 |
| Broche C4 | VSS — Ground |
| Broche D1 | VREFDQ — Reference voltage for data |
| Broche D2 | DQ6 — Data I/O 6 |
| Broche D3 | DQ7 — Data I/O 7 |
| Broche D4 | VSSQ — I/O ground |
| Broche E1 | A0 — Address input 0 |
| Broche E2 | A1 — Address input 1 |
| Broche E3 | A2 — Address input 2 |
| Broche E4 | VDD — Power supply |
| Broche F1 | A3 — Address input 3 |
| Broche F2 | A4 — Address input 4 |
| Broche F3 | A5 — Address input 5 |
| Broche F4 | VSS — Ground |
| Broche G1 | A6 — Address input 6 |
| Broche G2 | A7 — Address input 7 |
| Broche G3 | A8 — Address input 8 |
| Broche G4 | VDDQ — I/O power supply |
| Broche H1 | A9 — Address input 9 |
| Broche H2 | A10/AP — Address input 10 / auto precharge |
| Broche H3 | A11 — Address input 11 |
| Broche H4 | VSSQ — I/O ground |
| Broche J1 | A12 — Address input 12 |
| Broche J2 | A13 — Address input 13 |
| Broche J3 | A14 — Address input 14 |
| Broche J4 | VDD — Power supply |
| Broche K1 | BA0 — Bank address 0 |
| Broche K2 | BA1 — Bank address 1 |
| Broche K3 | BA2 — Bank address 2 |
| Broche K4 | VSS — Ground |
| Broche L1 | RAS# — Row address strobe |
| Broche L2 | CAS# — Column address strobe |
| Broche L3 | WE# — Write enable |
| Broche L4 | VDDQ — I/O power supply |
| Broche M1 | CS# — Chip select |
| Broche M2 | CKE — Clock enable |
| Broche M3 | ODT — On-die termination |
| Broche M4 | VSSQ — I/O ground |
| Broche N1 | CK — Clock (positive) |
| Broche N2 | CK# — Clock (negative) |
| Broche N3 | RESET# — Asynchronous reset |
| Broche N4 | VDD — Power supply |
| Broche P1 | DM0 — Data mask 0 |
| Broche P2 | DQS0 — Data strobe 0 (positive) |
| Broche P3 | DQS0# — Data strobe 0 (negative) |
| Broche P4 | VSS — Ground |
| Broche R1 | DM1 — Data mask 1 |
| Broche R2 | DQS1 — Data strobe 1 (positive) |
| Broche R3 | DQS1# — Data strobe 1 (negative) |
| Broche R4 | VSSQ — I/O ground |
| Broche T1 | DQ8 — Data I/O 8 |
| Broche T2 | DQ9 — Data I/O 9 |
| Broche T3 | DQ10 — Data I/O 10 |
| Broche T4 | VDD — Power supply |
| Broche U1 | DQ11 — Data I/O 11 |
| Broche U2 | DQ12 — Data I/O 12 |
| Broche U3 | DQ13 — Data I/O 13 |
| Broche U4 | VSS — Ground |
| Broche V1 | DQ14 — Data I/O 14 |
| Broche V2 | DQ15 — Data I/O 15 |
| Broche V3 | VDDQ — I/O power supply |
| Broche V4 | VSSQ — I/O ground |
Applications typiques
K4B4G1646D-BYH90 convient pour 6 applications: Laptop Memory Modules, Networking Equipment, Embedded Computing, Industrial Automation, Consumer Electronics, Server and Storage.
Laptop Memory Modules
The K4B4G1646D-BYH90 is ideal for DDR3L SO-DIMM modules in laptops, where low voltage (1.35V) reduces power consumption and extends battery life. Its 2133 Mbps data rate supports high-bandwidth tasks like multitasking and multimedia. The 96-ball FBGA package enables compact module designs. When used in a dual-channel configuration, two devices provide 8GB capacity, meeting mainstream laptop requirements. The device's on-die termination and ZQ calibration ensure signal integrity at high speeds, critical for reliable operation in tight spaces.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the K4B4G1646D-BYH90 provides high-speed packet buffering and forwarding tables. Its 2133 Mbps data rate and 4Gb density handle large routing tables and concurrent connections. The low 1.35V supply reduces heat in densely packed chassis. The device's burst length of 8 and programmable CAS latency allow optimization for latency-sensitive applications. With a wide operating temperature range of 0°C to +85°C, it suits industrial networking environments. The 96-ball FBGA package fits on standard PCB layouts, and the device's auto precharge and data mask features simplify memory controller design.
Recommandé
Embedded Computing
For single-board computers and industrial PCs, the K4B4G1646D-BYH90 offers a balance of capacity, speed, and power efficiency. Its 4Gb density supports operating systems and applications, while 1.35V operation minimizes power in fanless designs. The device's 16-bit interface simplifies routing on 2-layer boards. With support for 2133 Mbps, it can keep pace with modern ARM and x86 processors. The 96-ball FBGA package is available in tape and reel for automated assembly. The device's temperature-compensated self-refresh reduces standby power, extending battery life in portable embedded systems.
Recommandé
Industrial Automation
In PLCs and industrial controllers, the K4B4G1646D-BYH90 provides reliable memory for real-time data logging and control algorithms. Its 0°C to +85°C operating range suits factory floor environments. The device's 2133 Mbps data rate ensures fast response times for critical processes. The low 1.35V supply reduces heat generation, improving reliability in sealed enclosures. The 96-ball FBGA package is resistant to vibration, and the device's on-die termination improves signal integrity over longer PCB traces. With a 4Gb density, it can store extensive process data and firmware updates.
Recommandé
Consumer Electronics
The K4B4G1646D-BYH90 is used in smart TVs, set-top boxes, and gaming consoles for buffering video streams and running applications. Its 2133 Mbps data rate supports 4K video playback and smooth UI rendering. The 1.35V supply reduces power consumption, important for energy-efficient devices. The 4Gb density provides ample memory for multiple apps. The 96-ball FBGA package is compact, enabling slim device designs. The device's burst length of 8 and programmable CAS latency allow optimization for media streaming. Its RoHS compliance meets global environmental regulations.
Recommandé
Server and Storage
In entry-level servers and network-attached storage, the K4B4G1646D-BYH90 provides cost-effective memory for caching and metadata. Its 4Gb density and 2133 Mbps data rate handle high I/O workloads. The 1.35V supply reduces power in dense server racks. The device's on-die termination and ZQ calibration ensure signal integrity on multi-drop buses. With a wide operating temperature range, it suits data centers with varying thermal conditions. The 96-ball FBGA package is standard for RDIMM and UDIMM modules. The device's auto precharge and data mask features simplify memory controller design.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646D-BYH90 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646D-BYMA | K4B4G1646D-BYK0 | K4B4G1646D-BFMA | K4B4G1646D-BHMA | K4B4G1646E-BYK000 |
|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Die Revision | D-die | D-die | D-die | D-die | D-die | E-die |
Principaux différenciateurs
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard 1.5V DDR3. (vs K4B4G1646D-BHMA)
- Supports data rates up to 2133 Mbps/pin, enabling high-bandwidth applications. (vs K4B4G1646E-BYK000)
- D-die process offers a mature and reliable design. (vs K4B4G1646E-BYK000)
Notes de conception
For reliable operation at 2133 Mbps, maintain controlled impedance for DQ, DQS, and address/command traces. Use 40-60 ohm single-ended and 80-120 ohm differential impedance. Keep trace lengths matched within +/- 0.5mm for DQ/DQS groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the device. Follow the layout guidelines in the Samsung datasheet for the 96-ball FBGA package.
The K4B4G1646D-BYH90 operates from a 1.35V supply (VDD) and 1.35V I/O supply (VDDQ). Ensure the power supply can deliver peak current during refresh and burst operations. Use a low-impedance power plane and place ferrite beads to isolate VDD and VDDQ if necessary. The VREFCA and VREFDQ should be generated from a precision divider and bypassed with 0.1uF capacitors. Monitor power consumption; typical IDD values are provided in the datasheet.
Do not exceed the absolute maximum ratings for VDD (1.45V) and VDDQ (1.45V). Ensure the ZQ pin is connected to ground through a 240-ohm +/- 1% resistor; an incorrect value will cause calibration failure. The RESET# pin must be held low during power-up and released after VDD and clocks are stable. Avoid floating the ODT pin; tie it to VDD or VSS as needed. Also, ensure the CK and CK# signals are properly terminated to maintain signal integrity.
Informations de conformité
Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.
