MOSFETs
Productos (1294)
MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP
The NXP (formerly Freescale Semiconductor) MRF8S19260HR6 is an N-channel enhancement-mode lateral MOSFET designed for CDMA and multi-carrier base station power amplifier applications. Operating from 1930 MHz to 1990 MHz, this RF power transistor delivers 74 W average output power at 30 V supply with 18.2 dB gain and a 1.6 A bias point, all housed in the NI-1230-8 ceramic bolt-down package. It is engineered for cellular infrastructure in the PCS/AWS uplink band. An RF power transistor (LDMOS) is a specialized power MOSFET laterally diffused on a silicon substrate, designed to amplify high-frequency RF signals with high efficiency and ruggedness. Within the hierarchy: RF transistor -> power transistor -> MOSFET -> discrete semiconductor, LDMOS has become the dominant technology for base-station power amplifiers below 3 GHz due to its high gain, good linearity, and cost efficiency compared to GaAs and Si bipolar alternatives. The MRF8S19260HR6 is one example in NXP's Airfast family of laterally-diffused RF power devices. Key features include 18.2 dB typical power gain at 1960 MHz, 65 V drain-source voltage rating (V(BR)DSS), operation in Class AB or Class C for all major cellular modulation formats, integrated ESD protection, and a thermally optimized NI-1230-8 ceramic package. The ceramic bolt-down flange provides low thermal resistance for liquid-cooled or forced-air base-station designs. The MRF8S19260HR6 is designed around W-CDMA and multi-carrier drive profiles, supporting both symmetric and asymmetric carrier aggregation across the 1930-1990 MHz band. Its lateral MOSFET structure delivers superior linearity versus earlier-generation bipolar devices, simplifying DPD (digital pre-distortion) correction in Doherty amplifier topologies. Typical applications include W-CDMA/CDMA base-station final-stage PAs, multi-carrier GSM/EDGE amplifiers, and Doherty PA modules for the PCS/AWS uplink band. It is also used in repeater and small-cell infrastructure where high gain and rugged CW survivability are required. Design considerations require adequate heat-sinking via the NI-1230-8 bolt-down flange, proper via-fenced microstrip input/output matching networks on the recommended PCB substrate, and a regulated 30 V gate-bias supply sequenced after the drain supply. Always consult the NXP MRF8S19260H datasheet for S-parameter files and application notes before final layout. This page synthesizes distributor pricing, same-package drop-in alternatives, and practical PA design notes that go beyond the manufacturer datasheet presentation.
MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP
The NXP MRF8S19260HSR6 is a 74 W average, 30 V single W-CDMA lateral N-channel RF power MOSFET (LDMOS) designed for cellular base station transmitters operating from 1930 to 1990 MHz. It is rated for 65 V drain breakdown, delivers 18.2 dB gain at 1.99 GHz, and is qualified for Class AB and Class C operation across all standard cellular base-station modulation formats including CDMA, W-CDMA, and multi-carrier signals. A power LDMOS transistor is a specialized laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-power RF amplification. Within the taxonomy, it sits below RF power MOSFET -> power MOSFET -> MOSFET -> discrete transistor -> discrete semiconductor. LDMOS devices dominate cellular base-station power amplifier (PA) architectures because they combine high RF gain, excellent efficiency, broadband operation, and cost-effective silicon technology versus GaAs or GaN alternatives for sub-3 GHz macros. Key features of the MRF8S19260HSR6 include 74 W average output power, 18.2 dB power gain at 1.99 GHz, 30 V typical operating drain voltage, and a ruggedized package capable of withstanding the high VSWR mismatches encountered in cellular base-station installations. The device is housed in an NI-1230S-8 ceramic/bolt-down air-cavity package with integrated input and output matching networks optimized for the 1930-1990 MHz band. According to the NXP datasheet, this part is designed to deliver high reliability under multi-carrier W-CDMA drive conditions. The device uses NXP's high-voltage LDMOS process technology, which provides high breakdown voltage, low output capacitance, and inherent thermal stability when mounted on a properly dimensioned cold-plate. Internal ESD protection and over-voltage ruggedness are integrated at the die level, supporting field reliability under harsh outdoor base-station thermal cycles. Typical applications include W-CDMA, CDMA, LTE, and multi-carrier cellular base-station final-stage power amplifiers, repeaters, and high-power broadband RF amplifiers operating in the 1930-1990 MHz PCS/AWS band. Designers should mount the device on a copper or aluminum heat spreader with controlled thermal resistance (θJC specified in the datasheet) and use external circulators or isolators when antenna VSWR is variable. For multi-carrier signals, gate bias must be precisely tuned to maintain linearity while meeting adjacent-channel leakage ratio (ACLR) specifications.
MRF8S21100HR5 - 100W 2.17GHz RF Power MOSFET | NXP
The NXP MRF8S21100HR5 is an N-channel enhancement-mode RF power MOSFET designed for W-CDMA and LTE cellular base station applications at frequencies up to 2170 MHz, delivering 24 W output power at 28 V test condition in the NI-780H-2L ceramic package (Case 465-06). It provides 18.3 dB typical power gain at 2.17 GHz, supports a maximum drain-source breakdown voltage of 65 V, and is rated for 100 W P1dB-class pulsed RF operation in the cellular infrastructure band. An RF power MOSFET is a lateral or vertical metal-oxide-semiconductor field-effect transistor optimized to deliver radio-frequency power at high efficiency with controlled gain. In the broader taxonomy, it sits below RF transistor -> RF power transistor -> RF power amplifier device -> discrete RF semiconductor. RF MOSFETs are the dominant device technology in modern cellular base station power amplifiers because they offer excellent linearity, high gain, and repeatable performance in Class AB biasing for digitally modulated signals such as W-CDMA, LTE, and 5G NR. Key features include a 65 V V(BR)DSS breakdown rating that provides ample headroom for 28 V operation, 18.3 dB gain at 2.17 GHz that reduces driver-stage complexity, and an enhancement-mode gate that simplifies bias circuits because no negative gate voltage is required to keep the device off. The NI-780H ceramic flange package provides low thermal resistance for proper heatsinking in RF amplifier modules, and the case-465-06 industry-standard footprint enables reuse of proven pallet layouts across amplifier generations. The MRF8S21100HR5 uses NXP's HV8 (high-voltage 8th-generation) LDMOS process technology, which combines high breakdown voltage, high gain, and excellent thermal performance. This process is engineered for Doherty and Class AB PA topologies that are widely used in modern macro-cell and micro-cell base station transmitters for 3G/4G/5G radio access networks. The LDMOS architecture provides good RF ruggedness into mismatch conditions commonly encountered in field-deployed antenna systems. Typical applications include W-CDMA/LTE base station power amplifiers, Doherty amplifier final stages, and Class AB linear RF amplifiers in cellular infrastructure equipment operating between 2110 MHz and 2170 MHz. The high gain and 65 V breakdown make it equally suitable for driver stages in higher-power amplifier chains. When designing with this device, careful attention must be paid to PCB material selection (low-loss RF laminates recommended), heatsink mounting torque (per case 465-06 specifications), and proper drain bias sequencing to prevent parametric drift. Use of double-shielded RF test fixtures is recommended during characterization to avoid oscillation in the 2 GHz region. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing an engineering-focused view of the MRF8S21100HR5 for base station RF power amplifier designers.
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
The NXP MRF8S21100HSR3 is a 28 V N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA and LTE base-station applications across the 2110-2170 MHz band, rated for 24 W average output power (W-CDMA) and 100 W peak in a NI-780S (Case 465A-06) ceramic package. It is characterized under 100% PAR-tested conditions for guaranteed output capability and supports both Class AB and Class C operation across the cellular base-station modulation formats. An RF power MOSFET is a lateral-diffusion metal-oxide-semiconductor transistor built on a high-resistivity silicon substrate with a low-parasitic leadless ceramic package optimized for RF matching and thermal dissipation. Within the broader hierarchy, it sits below RF transistor -> power transistor -> discrete semiconductor, with N-channel enhancement-mode operation providing fail-safe bias behavior at gate threshold. Key features include 18.3 dB typical power gain at 2.14 GHz, 65 V drain-source breakdown voltage (V(BR)DSS), and operation from a 28 V nominal supply. The device is characterized with a series-equivalent large-signal model to simplify Doherty and single-ended PA circuit simulation. Built-in ESD protection and integrated gate-source clamping diodes simplify board design. Architecturally, the MRF8S21100HSR3 uses laterally diffused metal-oxide-semiconductor (LDMOS) technology with optimized source-via grounding through the ceramic package flange. This geometry minimizes common-source inductance, which is critical at 2.1 GHz where even fractional-nH parasitic losses degrade gain and PAE. Thermal performance is delivered through the NI-780S ceramic flange that bolts directly to the heatsink. Typical applications include W-CDMA/LTE macro-cell base-station PAs, Doherty final-stage amplifiers, and 2110-2170 MHz band UMTS/3GPP signal-chain transmit sections where linear efficiency is required. The wide bandwidth also makes it suitable for driver stages in multi-band radio units. When designing with this part, ensure the input and output matching networks are designed for the 2110-2170 MHz band with low-loss substrate; gate bias should be set to Class AB (approximately 2.7 V) for W-CDMA linearity. The flange temperature must remain below the maximum rating during continuous W-CDMA operation. This page synthesizes NXP official datasheet parameters, distributor pricing as of 2026-10-16, drop-in alternatives within the same NI-780S footprint, and practical design notes not found in the manufacturer datasheet alone.
MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP
The NXP MRF8S21120HSR3 is an N-channel enhancement-mode lateral RF power MOSFET designed for 2110-2170 MHz W-CDMA and LTE base station applications, delivering 28 W average output power at 28 V in the NI-780HS ceramic package. With a V(BR)DSS of 65 V, 17.6 dB typical gain at 2.17 GHz, and 100% PAR (Peak-to-Average Ratio) tested performance, this part is built for Doherty and Class AB final-stage amplifiers used in modern 4G macro-cell transmit chains. A RF power MOSFET is a discrete transistor specifically engineered to amplify high-frequency signals in the MHz-to-GHz range. Unlike generic switching MOSFETs used in DC-DC converters, RF power MOSFETs use a lateral structure with carefully engineered interdigitation of gate, drain, and source fingers to minimize parasitic capacitance and maximize gain at RF frequencies. Within the taxonomy, MRF8S21120HSR3 belongs to the family of RF power transistors -> discrete semiconductors -> power amplifiers -> wireless infrastructure components, and sits in NXP's Airfast RF power family, which dominates cellular base station transmitter designs through the 4G era and into early 5G upgrade modules. Key features include a typical CW output power capability well above the 28 W average rating for pulsed W-CDMA signals, integrated ESD protection, a thermal resistance (theta_JC) optimized for liquid-cooled or forced-air heatsinking in macro base stations, and a ruggedness level capable of surviving 10:1 VSWR at the rated output. The device is specified for operation between 2110 MHz and 2170 MHz - exactly the downlink band of the global 3GPP Band 1 (IMT-2000/UMTS), making it a drop-in final-stage device for most macro-cell transmit lineups serving that band. The MRF8S21120HSR3 uses a high-voltage LDMOS (Laterally Diffused MOSFET) process on a ceramic flange (NI-780HS) package with source on the case for direct chassis-ground mounting. The device is intended to be bolted to a heatsink or cold plate; thermal management is critical because at full output the die must dissipate up to 4-5 times the average RF power as heat. The part is also available as MRF8S21120HR3 (push-pull balanced version in a slightly different outline) for Doherty amplifier configurations. Typical applications include W-CDMA/LTE macro base station power amplifiers, Band 1 (2100 MHz) final-stage amplifiers, general-purpose Class AB RF power amplifiers from 2110-2170 MHz, driver stages in higher-power Doherty layouts, and upgrade/transmitter lineups for distributed antenna systems and small-cell base stations. Designers typically pair it with NXP's MRF8S21120HSR3 as the main device and a smaller peak amplifier such as the MRF6S21100N for Doherty operation. When designing with this part, allocate copper-clad footprints and load-pull-correct matching networks, and ensure the gate bias network provides a low-impedance path to ground at the operating frequency. Use gate-source clamping protection as recommended in the NXP datasheet to prevent thermal runaway during fault conditions. Designers should also account for the source being case-connected - any heatsink must be electrically isolated from RF ground using an insulator pad and thermal grease.
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
The NXP MRF8S21200HR6 is a 48 W average, 28 V RF Power N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) designed for W-CDMA and LTE base station applications operating across the 2110 MHz to 2170 MHz frequency band, supplied in the NI-1230 ceramic flange-mount package. It delivers 18.1 dB power gain and is rated for a 65 V maximum drain-source voltage with a typical test bias of 28 V at 1.4 A, providing the gain and ruggedness required for Doherty and Class AB power amplifier stages in cellular infrastructure. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a transistor architecture that integrates a high-voltage N-channel MOSFET with a laterally diffused drift region, allowing high RF output power, high efficiency, and excellent thermal performance in a single die. LDMOS sits within the broader hierarchy of RF power transistors -> discrete semiconductors -> power management, and is the dominant device technology for cellular base station power amplifiers from 700 MHz through 2.7 GHz due to its high breakdown voltage, ease of impedance matching, and stable performance under DPD (digital predistortion) correction. Key features include 2110-2170 MHz operation, 18.1 dB power gain, high gain flatness across the operating band, and exceptional thermal performance enabled by the NI-1230 ceramic flange-mount package. The part is also available as the MRF8S21200HSR6 in a different flange-mount outline, and both H and HS variants share the same silicon and RF performance. The lateral MOSFET structure provides high input impedance, simplifying driver-stage design and biasing. Typical applications include W-CDMA and LTE base station power amplifier final stages, Doherty amplifier configurations for macro-cell and small-cell transmitters, and cellular infrastructure repeaters. The 18.1 dB gain is sufficient to drive 48 W of average output power from a low-power driver stage, which simplifies the overall gain chain and reduces bill-of-materials cost. When designing with the MRF8S21200HR6, ensure the input and output matching networks are optimized for the 2110-2170 MHz band and that the PCB thermal interface to the ceramic flange is rated for the full Pdiss of the device. Flange-mount parts require torqued mounting to a heatsink or spreader with appropriate thermal compound, and the device pin leads should be soldered with care to avoid mechanical stress on the ceramic body.
MRF8S21200HSR6 - 48W RF Power LDMOS, 2110-2170 MHz | NXP
The NXP (formerly Freescale) MRF8S21200HSR6 is a dual N-channel enhancement-mode lateral MOSFET (LDMOS) designed for W-CDMA and LTE base station RF power amplifiers covering the 2110-2170 MHz band. Per the manufacturer datasheet, the device delivers 48 W average output power at 28 V in W-CDMA/LTE modulation formats, with 18.1 dB power gain and tested at 1.4 A quiescent current. It is housed in an NI-1230HS ceramic air-cavity package compatible with bolt-down or solder reflow mounting on PCB-based Doherty amplifier pallets. An RF power LDMOS transistor is a specialized lateral double-diffused MOSFET optimized for high-frequency, high-power amplification. LDMOS devices sit within the broader category of RF power transistors alongside GaN HEMTs, GaAs MESFETs, and bipolar RF transistors, and they have been the workhorse silicon technology for cellular macro-cell base-station PAs from the 700 MHz band through 2.7 GHz. Their lateral structure places source, drain, and gate on the same surface, enabling high breakdown voltage, excellent thermal conduction through the substrate, and stable gain at RF frequencies where standard power MOSFETs lose efficiency. Key features of the MRF8S21200HSR6 include integrated dual-section design for Doherty amplifier final-stage use, high breakdown voltage of 65 V for rugged operation into VSWR mismatches, and thermal robustness rated to a maximum junction temperature of 225 C. The lateral MOSFET architecture delivers the gain flatness and intermodulation distortion (IMD) performance required for multi-carrier W-CDMA and LTE signals with 4G-LTE PAPRs of 6-9 dB. Typical applications include W-CDMA, LTE, and TD-LTE macro-cell base-station PAs in the 2110-2170 MHz downlink band, especially in Doherty amplifier configurations where the dual-section package simplifies final-stage layout. The ceramic NI-1230HS package provides the low thermal resistance and RF grounding plane necessary for stable Doherty operation with high peak-to-average ratios. When designing with this device, ensure the PCB mounting flange is properly bolted to a heatsink with adequate thermal compound. Input and output matching networks must be tuned for the 2110-2170 MHz band; the device is not broadband-matched below 2110 MHz or above 2170 MHz. Bias sequencing should follow NXP application note conventions for stable quiescent current under thermal stress. This page synthesizes real-time distributor pricing from Mouser, the official NXP datasheet, and verified drop-in alternatives not found on a single manufacturer page, giving RF design engineers a single decision point for W-CDMA/LTE base-station PA component selection.
MRF8S23120HR5 - 120W RF Power LDMOS, 2.3GHz, 28V | NXP
The NXP Semiconductors MRF8S23120HR5 is a 120-watt RF power N-channel LDMOS transistor optimized for continuous-wave (CW) and pulsed amplifier operation in the 2300-2400 MHz ISM and WiMAX/4G/LTE infrastructure bands. Built on NXP's HV8 LDMOS process, it delivers 16 dB typical gain at 2.3 GHz, 28 V VDD, and 800 mA quiescent bias while sustaining a 28 W CW output into a 50 ohm load. It is packaged in the NI-780H-2L (SOT-957A) ceramic flanged ceramic package designed for high-power RF with excellent thermal conduction to an external heatsink. An RF power LDMOS transistor is a laterally-diffused MOSFET specifically engineered to handle tens to hundreds of watts of continuous radio-frequency power at frequencies from tens of megahertz to several gigahertz. Within the taxonomy, an LDMOS sits at the level of discrete semiconductor -> transistor -> MOSFET -> RF power MOSFET -> LDMOS. These devices form the final amplification stage in cellular base-station power amplifiers, microwave links, industrial RF heating, and aerospace telemetry systems. They offer a better gain-bandwidth product and thermal ruggedness than bipolar RF transistors, and lower conduction loss than GaAs solutions at this power tier. Key features of the MRF8S23120HR5 include 65 V drain-source breakdown rating for high-voltage operation, integrated ESD protection, simple single-supply 28 V biasing, and broadband input/output matching friendly to Class AB operation. The device's gain flatness across the 2300-2400 MHz band makes it well suited for multi-carrier LTE signals where linearity matters. Technical depth: The HV8 LDMOS process delivers 16 dB linear gain at 2.3 GHz with a typical output efficiency near 32% in CW Class AB. The internal package parasitic inductance is controlled through the NI-780H ceramic body, which also serves as the main thermal path. Built-in passive matching networks at the input ease external circuit design, while two bolt-down flanges provide low-thermal-resistance mounting directly to a heatsink or copper spreader. The device is rated for 28 W typical CW output at 28 V, with typical pulsed peak output at 120 W under narrow pulse conditions. Typical applications include 2.3-2.4 GHz WiMAX and LTE small-cell/base-station power amplifiers, RF plasma drivers, industrial microwave heating, telemetry transmitters, and radar pulse chains. The 28 V rail and 50 ohm interface simplify integration into standard Doherty or push-pull amplifier architectures. A key design consideration is heatsinking: the ceramic flanged package relies on the system chassis or external heatsink for thermal management. Without adequate heatsinking, junction temperature can exceed 200 C and degrade long-term reliability. Designers should mount the device to a machined aluminum or copper cold plate with a thin layer of thermal grease. This page synthesizes distributor pricing (DigiKey, Mouser, LCSC), drop-in alternatives within the NI-780 family, and practical RF design notes not found in the manufacturer datasheet alone.
MRF8S9100HSR3 - 72W RF Power MOSFET 920-960MHz | NXP
The NXP MRF8S9100HSR3 is an N-channel enhancement-mode lateral RF power MOSFET designed for GSM and GSM EDGE cellular base station applications spanning 865-960 MHz, delivering 72 W CW output power from a 28 V supply. Housed in the NI-780S ceramic air-cavity package, the device is characterized at 920 MHz with 19.3 dB typical power gain and a 500 mA quiescent bias point, making it suitable for both Class AB and Class C amplifier topologies in Doherty, single-ended, or push-pull configurations. A RF power MOSFET (metal-oxide-semiconductor field-effect transistor) is a discrete transistor optimized for radio-frequency power amplification, distinct from low-frequency power MOSFETs by its lateral die geometry, low parasitic capacitances, and matched input/output impedances. Within the transmitter chain hierarchy, it sits between the driver amplifier and the antenna, after the modulator/upconverter; within the broader component hierarchy, RF MOSFET belongs to discrete semiconductors, specifically power transistors, and is the building block for high-efficiency base-station PAs that drive macro-cell antennas and repeaters. Key features of the MRF8S9100HSR3 include 70 V drain breakdown voltage, internal input matching, an integrated ESD protection structure, and a thermally-efficient NI-780S flange with low thermal resistance (approximately 0.45 °C/W junction-to-case typical for this package family). The part is supplied on tape-and-reel (suffix R3) and is rated for 225 °C maximum junction temperature with gold-plated leads for long-term reliability in outdoor basestation environments. The device employs a laterally-diffused MOSFET (LDMOS) process on a silicon substrate, the industry-standard technology for sub-3 GHz macro-cell base-station power amplifiers due to its high gain, high breakdown voltage, and excellent thermal conductivity versus GaN-on-SiC at these frequencies. The MRF8S9100HSR3 is characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters, enabling accurate load-pull amplifier design. Typical applications include 900 MHz GSM/EDGE macro-cell base-station power amplifiers, cellular repeaters and boosters, public-safety Land Mobile Radio (LMR) infrastructure, and industrial/scientific RF generators. The 28 V bias aligns with standard telecom rails, and the wide 865-960 MHz bandwidth covers GSM-900 uplink/downlink and adjacent cellular bands in a single amplifier stage. When designing with the MRF8S9100HSR3, ensure that the gate bias network provides a stable quiescent current of 500 mA and that the heatsink is sized so that the junction remains below 200 °C at full CW output; a copper-molybdenum or copper-tungsten spreader is recommended under the ceramic flange to manage heat flux. This page consolidates current distributor pricing, parametric alternative parts in the same NI-780S ceramic package, and verified design notes pulled from the manufacturer datasheet, providing information gain beyond what distributor product pages typically expose.
MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP
The NXP MRF8S9102NR3 is an RF power field-effect transistor built as a 28V single W-CDMA lateral N-channel enhancement-mode MOSFET, rated for 28W average output power across the 865-960 MHz cellular base-station band and housed in the OM-780-2 ceramic package. An RF power MOSFET is a discrete transistor designed to amplify high-frequency radio signals to the multi-watt levels required at the antenna side of a base station or repeater. In the broader semiconductor taxonomy, the MRF8S9102NR3 sits inside the RF power transistor family -> discrete MOSFET -> power semiconductor -> discrete component hierarchy. Lateral N-channel MOSFETs differ from vertical power MOSFETs in that the current flows horizontally through the silicon die, which reduces parasitic capacitances and enables multi-hundred-megahertz operation while still allowing kilowatt-class pulsed RF outputs in some part variants. Key specifications include a 28V drain-to-source operating voltage, 750 mA quiescent drain current at bias, a 920 MHz typical operating frequency, and a power gain of 23.1 dB. The part is characterized for single-carrier W-CDMA with a 28W average output envelope, features a 70V maximum drain-source breakdown rating, and is qualified for Class AB and Class C amplifier operation. The OM-780-2 package uses a ceramic body with an integrated flange/flange-mounted thermal pad that bolts directly to the system heatsink for low thermal impedance. Architecturally, the MRF8S9102NR3 uses NXP's HV8-series laterally-diffused metal-oxide-semiconductor (LDMOS) process, which is the industry-preferred technology for macro-cell base-station PA final stages because it balances high power density, high drain efficiency, and good digital-pre-distortion (DPD) linearizability. Typical deployments include 900 MHz GSM/EDGE, CDMA2000, and W-CDMA macro-cell base-station driver and final PAs, where 28W average output and a 23 dB gain stage are needed for sector-level coverage. Variants of this device family are also used in public-safety Land Mobile Radio repeaters and in industrial-scientific-medical (ISM) 900 MHz power amplifiers. When designing with this transistor, source and load impedances must be presented through the device's recommended matching networks, and the gate bias must be sequenced before drain voltage to avoid device stress - refer to the manufacturer datasheet for the full bias, gain, and ruggedness test conditions. Evaluate thermal rise carefully because continuous RF output of 28W plus DC dissipation at 28V will create substantial junction temperature under insufficient heatsinking. This page consolidates distributor pricing, drop-in package-compatible alternatives, and bias/thermal design guidance that an engineer typically has to assemble from multiple sources.
MRF8S9120NR3 - 33W RF Power MOSFET 865-960MHz | NXP
The NXP Semiconductors MRF8S9120NR3 is a single W-CDMA lateral N-Channel RF power MOSFET designed for cellular base station final-stage amplification, delivering 33 W average output power at 865-960 MHz from a 28 V supply in an OM-780-2 ceramic air-cavity package. A lateral N-Channel Enhancement-Mode MOSFET is the dominant transistor architecture for high-frequency RF power amplification above 500 MHz because the lateral layout minimises parasitic capacitances and supports high breakdown voltage. Within the broader taxonomy, this part is a discrete RF power MOSFET, a sub-category of power MOSFETs, which themselves belong to the discrete semiconductor family used in power management and RF front-end subsystems of macro-cell base stations and repeaters. Key specifications include 19.8 dB typical power gain, 33 W average W-CDMA output power, 865-960 MHz operating band (700-1000 MHz usable), 28 V drain supply, and 800 mA typical quiescent drain current. The device supports Class AB and Class C operation, accommodating all major cellular modulation formats including W-CDMA, LTE, and GSM, making it a flexible final-stage building block for multi-standard base stations. The MRF8S9120NR3 uses NXP's HV8 lateral MOSFET process, which integrates gold metallisation for high ruggedness under output mismatch (high VSWR) and ESD protection on the gate. Internal matching networks are intentionally absent, allowing the designer to set the optimum load-line impedance for the chosen frequency sub-band and modulation bandwidth. Typical applications include W-CDMA/LTE base station final-stage power amplifiers, GSM/EDGE macro-cell transmitters, RF repeaters, and digital broadcast transmitters in the 900 MHz cellular band. Designers also use this part in industrial RF heating and pulsed-RF driver stages where high gain and 28 V operation are required. When designing with the MRF8S9120NR3, mount the part on a copper or brass flange with sufficient thermal mass to keep the junction below the 200 C maximum rating; at 33 W average and modest efficiency, several watts must be dissipated as heat. Use a low-loss substrate such as Rogers RO4003 for the input and output matching networks and follow NXP's reference design PCB layout in the datasheet for stable operation. This page synthesises distributor pricing, parametric drop-in alternatives, and practical design notes that go beyond the NXP datasheet, helping RF engineers shorten the selection and PCB bring-up process for 900 MHz cellular base-station final stages.
MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP
The NXP MRF8S9170NR3 is a 50 W average, 28 V lateral N-channel enhancement-mode RF power MOSFET (LDMOS) designed for W-CDMA cellular base station applications in the 920 to 960 MHz band. It is characterized at 28 V with 1 A quiescent bias, delivers 19.3 dB typical power gain, and is supplied in the NXP OM-780-2 ceramic package. The device is 100% PAR-tested for guaranteed output power capability and is characterized with series-equivalent large-signal impedance parameters, simplifying Doherty and Class AB power amplifier design. An RF power LDMOS transistor is a type of power MOSFET (metal-oxide-semiconductor field-effect transistor) specifically engineered to deliver high RF output power at high frequencies. LDMOS sits in the broader taxonomy of discrete semiconductors -> MOSFETs -> RF power MOSFETs -> laterally-diffused (LD) MOSFETs. It is the workhorse of cellular base-station power amplifiers because it offers high drain efficiency, excellent thermal stability, and good linearity when used with digital pre-distortion (DPD) systems. Within a base-station radio, the LDMOS final-stage PA converts DC input power into a modulated RF carrier that feeds the antenna, and the linearity of that PA directly determines the achievable data throughput and error-vector magnitude (EVM) of the cellular link. Key features include a 70 V drain-source voltage rating, integrated ESD protection, an internal matching network for the 920-960 MHz cellular band, and high ruggedness for mismatch tolerance. The OM-780-2 ceramic flange package provides a low thermal-resistance path (typically specified in the manufacturer's datasheet) that can be bolted directly to a heatsink or cold-plate, enabling continuous CW or pulsed W-CDMA operation at the rated 50 W average output power. Typical applications include cellular base-station final-stage PAs at 920-960 MHz, W-CDMA / LTE macro-cell driver amplifiers, Class AB and Class C amplifier topologies, and Doherty PA configurations where the device's characterized impedance data enables the 90-degree offset-line combiner. The part is also used in repeaters, boosters, and tactical-radio RF power stages operating in the upper-cell band. When designing with the MRF8S9170NR3, always use the manufacturer's recommended bias sequencing (gate voltage applied before drain voltage, gate discharged before drain is removed) to avoid device damage. Provide adequate heatsinking with a low-thermal-resistance mounting interface, and follow the PCB layout and grounding recommendations in the NXP datasheet reference design to achieve the rated gain and efficiency. This page synthesizes verified distributor pricing, characterized drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving RF base-station engineers a single source of parametric, supply-chain, and design data.
MRF8S9202NR3 - 58W 920-960MHz RF Power MOSFET | NXP
The NXP MRF8S9202NR3 is a 58 W average output power, 28 V single W-CDMA lateral N-channel RF power MOSFET designed for cellular base station applications across the 920-960 MHz band. Housed in the OM-780-2 ceramic air-cavity package, it delivers 19 dB typical gain and high efficiency for Class AB and Class C amplifier topologies. The device is fabricated using NXP's high-frequency HV8 lateral MOSFET process technology optimized for RF energy transfer at ultra-high frequencies. An RF Power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor engineered to deliver radio-frequency power amplification, typically used in the final power amplifier (PA) stage of a transmitter. Unlike small-signal MOSFETs used in digital logic, RF power MOSFETs feature low parasitic capacitances, high breakdown voltage, and robust thermal management to handle continuous high-power RF energy. Within the broader taxonomy, RF power MOSFETs belong to discrete semiconductors -> transistors -> MOSFETs -> RF MOSFETs, and ultimately to RF & wireless power amplification chain components. Key specifications include an operating frequency range of 920-960 MHz, 58 W average output power (W-CDMA), 28 V drain supply voltage (VDD), 1.3 A quiescent drain current (IDQ), 19 dB power gain, and a minimum drain-source breakdown voltage of 70 V. The OM-780-2 ceramic package provides a hermetic seal and a low-thermal-resistance path, critical for maintaining junction temperature under continuous RF drive. The device is rated for surface-mount installation and supports the high thermal flux inherent to base-station duty cycles. Architecturally, the MRF8S9202NR3 uses a lateral N-channel enhancement-mode MOSFET structure, which minimizes feedback capacitance (Crss) and supports broadband gain at 900 MHz. The HV8 process enables 28 V operation with high breakdown margin, reducing the need for elaborate over-voltage protection in the final-stage amplifier module. Typical applications include W-CDMA/LTE base-station PAs at 900 MHz, GSM/EDGE linear amplifier drivers, industrial RF heating at the 900 MHz ISM band, and military/commercial radio links. The wide breakdown margin (70 V) supports rugged operating conditions at high VSWR loads common in cellular infrastructure. When designing with the MRF8S9202NR3, ensure the PCB land pattern follows the OM-780-2 recommended footprint and that the heat-spreader is properly bolted to the PCB ground pour with adequate thermal compound. Bias sequencing should bring gate voltage up before drain voltage to avoid parametric drift. This page consolidates distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet with engineering context not always surfaced in stock aggregator listings.
MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP
The NXP MRF8S9220HSR3 is a 65 W average output, 28 V lateral N-channel enhancement-mode RF power LDMOS transistor designed for 920-960 MHz single-carrier W-CDMA base station applications, housed in an NI-780S ceramic package. It delivers 65 W P1dB-equivalent average power in the 920-960 MHz cellular band with 19.4 dB typical power gain and 100% PAR-tested for guaranteed W-CDMA output capability, while the dual-path MRF8S9220HR3 variant supports higher power configurations. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power transistor technology optimized for high-frequency, high-power RF amplification. LDMOS transistors sit within the broader MOSFET family and the power management hierarchy of RF front-end components. Compared to bipolar junction transistors (BJTs), LDMOS provides higher gain, better efficiency, and superior thermal stability, making it the dominant technology in cellular base station power amplifiers from 700 MHz through 2.7 GHz. The MRF8S9220HSR3 is part of NXP's HV8 family of 50 V-rated lateral RF MOSFETs. Key features include typical 19.4 dB power gain at 960 MHz, single-carrier W-CDMA operation at 28 V VDD, integrated ESD protection, and Ni-pad gold-free metallization for high-volume assembly. Characterized with series-equivalent large-signal impedance parameters, the device supports both Class AB and Class C bias configurations across common cellular modulation formats including CDMA2000, W-CDMA, and LTE. Designers can use this part in Doherty, Class AB push-pull, or single-ended final-stage topologies. The 70 V maximum drain-source rating provides substantial avalanche headroom over the 28 V nominal operating voltage, supporting robust SWR mismatch tolerance. Series-equivalent output impedance data is published to streamline matching network synthesis on FR-4 or ceramic substrates. Typical applications include 900 MHz GSM/EDGE base station PAs, LTE band 8 final-stage amplifiers, RFID reader transmitters, industrial RF heating, and ISM-band solid-state power sources. The wide frequency coverage also supports amateur radio amplifiers in the 902-928 MHz ISM segment. When designing with this part, bias the gate at approximately 2.8 V quiescent for Class AB and ensure the thermal interface uses a clamped or soldered heatsink. Designers should also confirm adequate drain-side decoupling (10 uF + 1 nF) close to the package tab to suppress VDD ringing under W-CDMA envelope peaks. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, including same-brand part-number variants and cross-reference data sourced from public distributor cross-reference tools.
MRF9002NR2 - 1GHz, 2W, 26V RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF9002NR2 is a 1000 MHz, 2 W, 26 V lateral N-channel enhancement-mode broadband RF power MOSFET housed in a 16-pin PFP (Power Flat Pack) package. Designed for broadband commercial and industrial applications up to 1.0 GHz, the device is rated for 26 V base-station operation, delivers 18 dB power gain at 960 MHz, and achieves 37 dBm (5 W) pulsed output power, with the industry's typical continuous-power point near 2 W into 50 ohms. An RF MOSFET is a field-effect transistor whose geometry, package, and matching structures are tuned to deliver useful power gain at radio frequencies from HF through microwave bands. LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) variants such as this one sit inside the broader hierarchy of power transistors (LDMOS -> RF power MOSFET -> discrete RF transistor -> RF semiconductor), and they have largely displaced older bipolar and silicon-FET parts in 26 V cellular base-station and broadband-instrumentation transmitters because of their high gain, broadband response, and ruggedness under VSWR mismatch. Key specifications include 18 dB minimum power gain at 960 MHz / 25 mA bias, 37 dBm (5 W) typical pulsed output capability, a 65 V maximum drain-source rating, N-channel enhancement-mode operation, and a PFP-16 ceramic power flat pack with a solderable backside thermal contact. The low input capacitance and high transition frequency simplify matching from HF through L-band, while the common-source configuration simplifies PCB layout by allowing grounded-source tabs and a single positive drain feed. Typical applications include VHF/UHF broadband linear amplifiers, 900 MHz ISM-band and cellular base-station driver stages, instrumentation RF power modules, and general-purpose 26 V common-source RF amplifiers. The broadband response also makes the part attractive for laboratory amplifiers, RF laboratory signal sources, and test-and-measurement front-ends where a single part must cover wide frequency ranges without re-matching. When designing with this device, bias the gate at approximately 2-4 V above threshold (around 25 mA quiescent current) for Class-AB operation, and ensure the heatsink/PCB copper area under the PFP-16 backside contact meets thermal-resistance budgets so the junction stays below the rated maximum. Adequate input and output matching networks are mandatory to realize the datasheet's 18 dB gain figures. This page synthesizes distributor pricing, drop-in alternative guidance, and practical design notes sourced from distributor pages and the manufacturer datasheet - engineering context not always visible on a single distributor page.
MRF9030GNR1 - RF Power LDMOS MOSFET, TO-270-2 | NXP
The NXP MRF9030GNR1 is an N-channel enhancement-mode lateral MOSFET (LDMOS) designed for RF power applications up to 1.0 GHz, delivered in a TO-270-2 GULL ceramic package. It is part of NXP's RF Sub-Micron MOSFET Line and targets broadband commercial and industrial applications requiring high gain and rugged RF performance. The 'R1' suffix denotes tape-and-reel packaging for high-volume SMD-compatible placement on matching land patterns. An RF power MOSFET is a discrete semiconductor device that converts DC supply power into RF output power at high frequencies, typically used as the final or driver stage in transmitters. Within the broader taxonomy, it sits below power transistor -> discrete semiconductor -> electronic component, and LDMOS specifically is the dominant technology for sub-2 GHz high-power RF amplification due to its high breakdown voltage, high gain, and excellent linearity compared to bipolar or GaAs alternatives. Key features include broadband operation from DC to 1.0 GHz, high gain typical of NXP's sub-micron LDMOS process, and a ceramic TO-270-2 gull-wing package optimized for thermal dissipation through a flanged lead. The device is rated for high CW and pulsed RF output power and is suitable as a driver or final stage in sub-1 GHz transmitters for industrial, scientific, and medical (ISM) bands as well as amateur radio and commercial two-way radio links. The MRF9030GNR1's lateral MOSFET architecture provides a high drain-source breakdown voltage combined with low feedback capacitance, enabling stable operation across broadband matching networks. The ceramic TO-270-2 package provides low thermal resistance and a robust mechanical form factor that withstands high VSWR mismatch conditions typical in real-world RF systems. According to legacy Motorola/Freescale datasheet material published before NXP's acquisition of Freescale, this die is qualified for continuous-wave RF operation. Typical applications include 900 MHz ISM band power amplifiers, commercial RF amplifiers for cellular infrastructure (driver stage), amateur radio HF/VHF amplifiers up to 1 GHz, and broadband general-purpose RF amplification. The wide frequency coverage also makes it a candidate for pulse-RF and laboratory test amplifiers. When designing with this device, observe the maximum ratings for drain voltage, drain current, and total device dissipation. Adequate PCB copper thermal spreading under the ceramic package and a properly designed broadband matching network are essential. Use a low-ESR bypass arrangement on the drain and gate feeds to prevent parametric oscillation. This page synthesizes distributor stock data, NXP family cross-references, and practical thermal/RF layout notes that extend beyond the bare data sheet.
MRF9030LR1 - 945MHz 30W 26V RF Power MOSFET | NXP Semiconductors
NXP Semiconductors (formerly Freescale/Motorola) MRF9030LR1 is a 945 MHz, 30 W, 26 V lateral N-channel enhancement-mode broadband RF power MOSFET housed in the NI-360 ceramic package with tape-and-reel packaging. Designed for common-source large-signal amplifier operation in 26 V base-station equipment, the device delivers 19 dB typical power gain at 945 MHz and is rated for continuous-wave (CW) and pulsed RF service in commercial and industrial systems operating up to 1.0 GHz. As an RF Power Field-Effect Transistor built on the RF Sub-Micron MOSFET process, it combines high breakdown voltage, high gain, and broadband input/output matching in a single flanged ceramic package that bolts directly to a heatsink or chassis. An RF power MOSFET is a specialized lateral field-effect transistor designed for high-frequency, high-power amplification. Within the broader semiconductor taxonomy it sits at the intersection of discrete semiconductors (specifically the MOSFET family) and RF/wireless power amplification blocks used in transmitters, base stations, and industrial heaters. Unlike small-signal MOSFETs used for logic-level switching, the RF power MOSFET uses a high-drain-voltage lateral structure with thick metal gate/source/drain fingers to minimize on-resistance and distribute current uniformly across the die, maximizing ruggedness into VSWR mismatches. Key features of the MRF9030LR1 include 30 W continuous RF output power, 26 V DC drain supply, 19 dB typical power gain at 945 MHz, broadband performance from HF through 1 GHz, enhancement-mode N-channel gate drive (simplifying bias circuits versus depletion-mode parts), and a broadband input matching network optimized for common-source Class A/AB operation. The lateral cell geometry provides excellent thermal conductivity between the active die and the ceramic flange, keeping junction temperature low under CW operation. Its high gain reduces driver-stage count in transmitters, lowering overall BOM cost and PCB complexity. In typical 945 MHz base-station final-stage operation the device operates from a 26 V rail, presenting a Class AB common-source amplifier with 30 W CW output and 19 dB gain. The lateral MOSFET structure gives predictable gain flatness across the 1 GHz bandwidth and high drain efficiency when properly matched, making it well suited for both continuous-wave and pulsed RF service. The device is specified for operation over the industrial temperature range and uses gold-metallized leads for long-term reliability in outdoor or base-station environments. Typical applications include 26 V cellular base-station final stages operating at 900 MHz, UHF ISM-band industrial heaters and plasma generators, FM broadcast power amplifiers, driver stages for higher-power transmitters, and broadband Class A/AB linear amplifiers for laboratory and instrumentation use. The high gain at 945 MHz is also attractive for amateur-radio 902-928 MHz linear amplifier designs. Designers should note that proper RF heatsinking via the ceramic flange is mandatory - the 92 W maximum dissipation rating assumes the flange is bolted to an adequate heatsink. Input and output matching networks must present the recommended load impedance at the drain and source impedances at the gate to achieve rated gain and efficiency. Bias sequencing with a 26 V drain should precede gate bias to avoid forward-biasing the gate oxide. This page synthesizes distributor pricing, NXP and Motorola legacy datasheet specifications, drop-in same-package alternatives, and practical RF amplifier design notes not found on a single manufacturer page.
MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale
The NXP MRF9030MBR1 is a 30 W, 945 MHz lateral N-channel enhancement-mode RF power MOSFET from the RF Sub-Micron MOSFET family, housed in a TO-272-2 surface-mount ceramic package. It is designed for broadband commercial and industrial applications with operating frequencies up to 1.0 GHz and features a typical power output of 30 W at 945 MHz when operated from a 26 V supply rail. An RF Power MOSFET is a specialized power field-effect transistor whose die, package, and matching networks are optimized to deliver useful gain at radio frequencies, typically from HF through microwave bands. Lateral MOSFETs place the source, gate, and drain terminals on the same surface of the silicon die, which lowers parasitic capacitances and improves high-frequency gain compared to vertical DMOS or SiGe HBT structures. The MRF9030MBR1 sits within the family RF Power Transistor > RF Power MOSFET > RF Power Device > Discrete Semiconductor > Semiconductor and is targeted at the final stage of 26 V base-station, industrial, and broadband radio transmitter chains. Key specifications include 30 W typical output power at 945 MHz, 20 dB power gain in the matched broadband configuration, a 26 V DC drain supply rating, 250 mA typical quiescent or bias-class current, operation from DC up to 1000 MHz, and a robust SO-272 flanged ceramic package that provides a low thermal resistance path from the die to the mounting flange. The device is N-channel enhancement-mode, meaning a positive gate-source voltage is required to turn the channel on, simplifying bias network design. The lateral die geometry combined with a ceramic TO-272-2 package supports broadband common-source amplifier operation with minimal impedance transformation, allowing engineers to reuse the same PCB footprint across 945 MHz ISM, cellular, broadcast, and two-way radio designs that need 30 W of clean RF power from a 26 V bus. According to the Freescale / NXP MRF9030M datasheet, the part is qualified for large-signal common-source amplifier service in 26 V base-station equipment. Typical applications include 915 MHz and 945 MHz ISM-band amplifiers, GSM and cellular base-station driver stages, two-way land-mobile radio PAs, industrial RF heating drivers, broadband laboratory amplifiers, and avionics / telemetry transmitters in the 800-1000 MHz range. The broadband response also makes it attractive as a generic lab RF amplifier gain block when 30 W of saturated output is acceptable. When designing with the MRF9030MBR1, observe the maximum drain-source voltage, dissipation, and case-temperature ratings from the manufacturer datasheet; insufficient heatsinking at 30 W continuous CW operation will rapidly exceed the junction temperature limit. Always use the manufacturer-recommended evaluation board layout, input matching network, and bias sequencing to preserve gain linearity and device ruggedness into a mismatched load. This page synthesizes verified distributor pricing, drop-in alternatives, and practical design notes not always presented together in the manufacturer datasheet, helping RF engineers shorten the BOM selection cycle for 26 V / 30 W / 945 MHz power amplifier designs.
MRF9045NBR1 - 45W 945MHz RF Power LDMOS Transistor | NXP/Freescale
The NXP/Freescale MRF9045NBR1 is a 45 W RF power LDMOS transistor designed for broadband commercial and industrial applications up to 1000 MHz, housed in a TO-272-2 ceramic flanged package. Per the manufacturer datasheet, the device delivers 19 dB power gain and 41% two-tone drain efficiency at 945 MHz when operated from a 28 V supply with a 350 mA quiescent bias, making it well-suited for large-signal common-source amplifier stages in 28 V base station equipment. An RF power MOSFET is a discrete lateral double-diffused metal-oxide-semiconductor field-effect transistor optimized to deliver high RF output power at high frequencies. LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) belongs to the silicon transistor family (silicon -> BJT/MOSFET -> LDMOS -> RF power MOSFET), and has become the dominant technology in cellular base-station power amplifiers thanks to its high gain, broadband performance, excellent thermal conductivity, and lower cost-per-watt than equivalent GaN or Si BJT devices. Key features of the MRF9045NBR1 include 19 dB power gain at 945 MHz, 41% two-tone efficiency, integrated ESD protection, and guaranteed ruggedness into a load mismatch. The lateral N-channel enhancement-mode structure is designed for broadband operation and supports both single-carrier and multi-carrier modulation formats. The 65 V voltage rating and integrated ESD structure simplify board layout while enhancing field reliability in production base-station hardware. Typical 945 MHz two-tone performance includes 45 W PEP (peak envelope power) output with -31 dBc intermodulation distortion. The device supports N-CDMA and similar linear modulation schemes that demand high linearity and dynamic range. The TO-272-2 ceramic flange package provides a low thermal-resistance path to the heatsink, with a maximum power dissipation rating of 177 W absolute (per secondary distributor data). Typical applications include cellular base-station power amplifiers at 900 MHz GSM/EDGE and CDMA bands, UHF industrial heating transmitters, land-mobile-radio (LMR) repeaters, ISM-band RF generators, and 945 MHz cellular infrastructure driver/final stages. Designers choose the MRF9045NBR1 when 19 dB gain and 45 W PEP are required at 28 V supply rails in a small flange-mount outline. When designing with this device, ensure that the RF PCB substrate has controlled-impedance traces (typically 50 ohm microstrip) and that the bolted flange is torqued to the manufacturer-specified value to keep the thermal interface consistent. Because the drain operates at 28 V DC, the matching network, DC blocking, and bypass capacitors must be rated for the full 28 V rail plus transient overshoot from PA load transients. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical RF design notes not found on a single manufacturer datasheet page.
MRF9060MR1 - 60W 945MHz Lateral N-Channel RF Power MOSFET | NXP
The NXP (formerly Motorola/Freescale) MRF9060MR1 is a 60 W, 26 V lateral N-channel enhancement-mode RF power MOSFET designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz, packaged in a TO-270-2 plastic envelope. An RF power MOSFET is a metal-oxide-semiconductor field-effect transistor specifically engineered to deliver high RF output power with high gain and efficiency at frequencies from HF through microwave. Lateral N-channel enhancement-mode RF MOSFETs belong to the broader RF power transistor family, which sits within RF & wireless discrete semiconductors. They are commonly deployed in the final stage (PA) of base-station transmitters, industrial RF generators, and broadband amplifier chains where common-source Class AB operation provides linear amplification of AM, FM, or complex digitally modulated signals. Key features include 60 W continuous-wave output power at 945 MHz, 18 dB typical power gain at 945 MHz with 26 V supply, broadband performance from DC to 1.0 GHz, and a 26 V DC drain-to-source rating typical of base-station infrastructure. The lateral die topology offers high gain and large-signal ruggedness compared to vertical MOSFETs and bipolar transistors. The TO-270-2 industry-standard plastic flanged package supports bolt-down thermal mounting onto an external heatsink or chassis spreader, enabling reliable CW operation across the full 60 W envelope. The MRF9060MR1 uses NXP's sub-micron RF MOSFET process with an integrated gate ESD protection network and stable threshold targeting Class AB biasing. Its high gain (~18 dB) reduces the driver-stage gain requirement, simplifying the overall amplifier BOM. Lateral geometry combined with a thermally-enhanced ceramic/ plastic TO-270 flange yields an SOA wide enough to survive mismatched-load (VSWR) transients typical of antenna-port faults in base-station service. Typical applications include 900 MHz cellular base-station power amplifiers, industrial RF heating and plasma generators, FM broadcast translators, broadband Class A/AB linear amplifiers, and military/aerospace RF links. Its broadband response also makes it suitable for general-purpose laboratory RF power amplifiers covering 100 MHz to 1000 MHz. When designing with the MRF9060MR1, source-lead grounding through the package flange is critical - the TO-270 tab is the primary thermal AND electrical ground path. Use copper-clad PCB or copper spreader with thermal interface material rated for sustained 70 W dissipation, and keep gate and drain bond-wire traces as short as possible to minimize parasitic feedback above 800 MHz. This page synthesizes NXP/Freescale datasheet parameters, distributor pricing, and drop-in alternative MPNs not always co-listed on DigiKey/Mouser catalog pages, providing one reference for sourcing and second-source decisions.
MRF9060NR1 - 945MHz 60W RF Power MOSFET TO-270-2 | NXP
The NXP MRF9060NR1 is a 60 W lateral N-channel enhancement-mode RF power MOSFET designed for broadband commercial and industrial applications up to 1000 MHz, housed in the TO-270-2 plastic package. It is specified at 945 MHz, 26 V supply, delivering 60 W of output power with 18 dB typical gain. The MRF9060NR1 is intended for large-signal, common-source amplifier applications in 26 V base station equipment operating across the UHF band. According to the Freescale/NXP datasheet, the device uses a lateral MOSFET structure optimized for broadband performance and high gain at VHF through low-UHF frequencies. An RF power MOSFET is a discrete transistor built specifically to amplify radio-frequency signals at high power levels. In the broader taxonomy it sits under discrete semiconductor -> transistor -> MOSFET -> RF MOSFET -> power MOSFET. RF power MOSFETs differ from small-signal MOSFETs in their ability to handle tens to hundreds of watts while maintaining useful gain at RF, and they have largely replaced bipolar transistors in base-station PAs because of their higher gain, easier matching, and better thermal behavior at 28-50 V rails. Key features of the MRF9060NR1 include 60 W Pout at 945 MHz / 26 V, 18 dB typical power gain, drain efficiency around 33% in single-carrier N-CDMA, and ACPR of -45.7 dBc at 750 kHz offset. The lateral MOSFET architecture provides high gain and broadband response. The TO-270-2 plastic package is leadless and surface-mountable, with a ceramic body and two flanges for source grounding plus a tab for the drain lead. This construction supports efficient thermal dissipation via the package mounting surface. Typical applications for the MRF9060NR1 include UHF base-station power amplifiers at 470-960 MHz, commercial FM broadcast transmitters, industrial RF heating, and broadband general-purpose RF amplifiers. It is also used as a final-stage or driver in land-mobile radio systems and in amplifier modules for cellular infrastructure where 26 V supplies are standard. When designing with this device, ensure the input and output matching networks are optimized for the target frequency band. Place a low-impedance source grounding directly under the source flanges, use sufficient copper on the drain pad for thermal relief, and observe the absolute maximum ratings (Vds up to 66 V per cross-reference data). Adequate heatsinking and forced-air cooling are recommended at continuous 60 W operation. This page synthesizes distributor pricing from DigiKey/Mouser, drop-in alternatives sourced from NXP's MRFE6S series, and practical design notes not aggregated in the original Freescale datasheet.
MRF9135LR3 - 880 MHz, 135 W, 26 V RF Power LDMOS | NXP
The NXP Semiconductors MRF9135LR3 is a 135 W lateral N-channel enhancement-mode RF power MOSFET designed for broadband commercial and industrial applications in the 865-895 MHz band. It operates from a 26 V supply rail and is delivered in the NI-780L ceramic package with an R3 (tape-and-reel) packing suffix. The device is targeted at large-signal common-source amplifier stages in GSM/EDGE base-station transmitters, where its high gain and broadband performance deliver efficient linear output power. An RF power LDMOS transistor is a lateral double-diffused MOSFET optimized to deliver multi-watt to multi-hundred-watt CW or pulsed RF output power with high drain efficiency. The MRF9135LR3 belongs to the NXP RF Sub-Micron MOSFET Line, sitting in the hierarchy of discrete semiconductor -> power MOSFET -> RF power transistor -> LDMOS -> base-station PA final stage. This category dominates cellular infrastructure PA design because LDMOS combines high breakdown, high gain, and acceptable linearity at 26-28 V rails for sub-3 GHz bands. Key specifications include 135 W typical output power, approximately 17.5 dB typical power gain, and 60% typical drain efficiency in the 865-895 MHz band, all measured per NXP's standard 26 V / class-AB test conditions. The device is rated for 26 V VDD and broadband matched to simplify PCB integration. Integrated ESD protection and a thermally robust NI-780L ceramic flange with low thermal resistance support reliable CW operation in base-station chassis. The R3 suffix denotes tape-and-reel packaging for high-volume SMT-compatible assembly. The architecture is a laterally diffused MOS gate over an N-channel drift region, with the source connected via through-wafer vias to a flange for low inductance. The die is matched internally for the 880 MHz band, which shortens design cycles by reducing external matching complexity. Integrated passive networks and matched input/output impedances allow direct PCB integration with microstrip or stripline matching networks, lowering BOM cost versus discrete VDMOS or GaN alternatives at sub-1 GHz frequencies. Typical applications include GSM/EDGE 900 MHz base-station power amplifiers, industrial RF heating at UHF, broadcast UHF translators, and commercial RF lighting sources. The broadband match makes it equally well suited for pulsed radar driver stages in the 900 MHz ISM band and for amplifier modules used in professional radio repeaters. The R3 tape-and-reel variant enables automated high-volume assembly. When designing with the MRF9135LR3, ensure the heatsink is sized for the full 26 V VDD x ~0.5 A quiescent DC idle dissipation plus the average RF power delivered to the load minus efficiency losses. A small-signal driver stage (for example MRF9130 or MRF9045) is recommended in front of this final-stage device because its gain alone is insufficient to drive an entire GSM PA chain from a few milliwatts.
MRF9135LR5 - 25W 880MHz LDMOS RF Power MOSFET | NXP
The NXP Semiconductors MRF9135LR5 is a 25 W RF power LDMOS transistor designed for 880 MHz applications, supplied in a 3-pin NI-780H-2L ceramic/bolt-down package. Per NXP datasheet, the device operates from a 26 V supply rail, draws approximately 1.1 A of drain current at full power, and delivers 17.8 dB of power gain at 880 MHz. The rated drain-source breakdown is 65 V, and the part is intended for class-AB linear amplification in UHF mobile-radio and ISM-band transmitter service. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a type of RF power MOSFET that uses a laterally diffused drain region under the gate, combining the high input impedance and ease of biasing of a MOSFET with the high breakdown voltage and excellent RF ruggedness required for RF power amplification. Within the broader taxonomy it sits in: RF power transistor -> RF power MOSFET -> RF power semiconductor -> discrete semiconductor. LDMOS is the dominant technology at frequencies below ~3 GHz in cellular base stations and UHF/900 MHz industrial transmitters, displacing older bipolar and VDMOS parts on the basis of higher gain, better efficiency, and superior linearity. Key features include an integrated ESD protection structure, a thermally robust NI-780H-2L flange package suited to bolted heatsink mounting, and a single-ended common-source configuration that simplifies PCB layout at UHF. The part is internally matched only at the input; the output requires external matching to 50 ohm. Drain efficiency at rated power is typically 55-60% in class-AB service, and the device is rated for CW or pulsed operation within its SOA envelope. Typical applications include 880 MHz cellular base-station driver stages (AMPS, TDMA, GSM base-station PA blocks), UHF digital and analog radio transmitters, RFID reader power stages, and industrial/scientific (ISM) band transmitters in the 902-928 MHz band. The 65 V breakdown rating gives meaningful headroom over the 26 V operating rail for inductive load mismatch tolerance. When designing with this device, ensure the heatsink thermal resistance keeps the junction below 200C at the worst-case continuous-CW load. Output matching must be optimized for the actual frequency band of operation; do not assume broadband performance from a single match. This page synthesizes drop-in alternatives, design notes, and commercial availability information not consolidated on a single manufacturer or distributor page.
MRFE6P9220HR3 - 47W 900MHz RF Power LDMOS MOSFET | NXP
The NXP MRFE6P9220HR3 is a 47 W average (200 W peak) lateral N-channel enhancement-mode RF power LDMOS transistor designed for 865-900 MHz base-station amplification, housed in the NI-860C3 ceramic-metal sealed cofired surface-mount package. An RF power LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) transistor is a specialized power MOSFET optimized for high-frequency, high-power amplification in the VHF/UHF/microwave bands. LDMOS devices sit within the broader MOSFET family -> power semiconductor -> discrete semiconductor -> electronic component hierarchy, and dominate cellular base-station power amplifier (PA) designs because they combine high breakdown voltage, high gain, and good efficiency at RF frequencies where conventional silicon power MOSFETs lose performance. The 'lateral' structure keeps current flow parallel to the die surface, reducing parasitic capacitance and enabling multi-MHz to multi-GHz operation. Key features of the MRFE6P9220HR3 include a 66 V drain-source voltage rating, 20 dB typical power gain at 880 MHz, 47 W average / 200 W peak output power capability in N-CDMA waveforms, and operation from a 28 V supply. The part is specified for frequencies up to 1000 MHz, with broadband matching capability covering both cellular uplink (824-894 MHz) and ISM-band applications. The NI-860C3 overmolded ceramic package provides a low-thermal-resistance path and is designed for direct solder attachment to a copper-flanged PCB heatsink. The device uses NXP's proven HV6E LDMOS process generation, which yields high intrinsic ruggedness against load mismatch (VSWR), making it tolerant of antenna-detuned conditions common in field-deployed base stations. Internal gate-source ESD protection and an integrated drain-source diode simplify bias network design. According to the manufacturer datasheet MRFE6P9220H, the device is rated for infinite VSWR survivability under specified bias and drive conditions. Typical applications include 900 MHz GSM/CDMA/UMTS base-station final-stage power amplifiers, RFID and ISM-band industrial heaters at 915 MHz, digital broadcast transmitters, radar pulse drivers, and tactical/airborne communications amplifiers. The 28 V bias matches standard cellular infrastructure rails, simplifying power-supply design. When designing with this device, follow the manufacturer reference layout for input/output matching networks and ensure the PCB thermal pad is bonded to a sufficient copper area or external heatsink to keep junction temperature below the maximum rating. Use a gate-side RC network for bias stabilization and a drain-side harmonic filter to meet regulatory emission masks. This page synthesizes distributor pricing, drop-in pin-compatible NXP and competitor alternatives, and practical thermal/PCB design notes not consolidated in the manufacturer datasheet.