1ED3124MC12HXUMA1 vs 1EDN7146UXTSA1 Comparación
Comparación detallada lado a lado de 1ED3124MC12HXUMA1 por Infineon y 1EDN7146UXTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1ED3124MC12HXUMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,45 | $0,82 |
| Channel Type | Single-channel | — |
| Configuration | High-side / Low-side (non-inverting) | — |
| Number of Drivers | 1 | — |
| Número de salidas | 1 | — |
| Peak Source Current | 13.5 A | — |
| Peak Sink Current | 14 A | — |
| Isolation Technology | Magnetic coupling (coreless transformer) | — |
| Isolation Voltage (RMS) | 5.7 kV | — |
| Transient Overvoltage | 8000 Vpk | — |
| Supply Voltage (VCC2) | 10.5 V to 35 V | — |
| Supply Current (Max) | 1.1 mA | — |
| Propagation Delay (Typ) | 90 ns | — |
| Tiempo de subida | 15 ns | [DATA_NEEDED: typical rise time ns] |
| Tiempo de bajada | 30 ns | [DATA_NEEDED: typical fall time ns] |
| Temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado | PG-DSO-8 (DSO-8) | PG-VSON-1 (6-pin with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Protections | UVLO, Short-Circuit (DESAT) | — |
| Target Devices | IGBT, SiC MOSFET | — |
| Estado RoHS | Compliant | Compliant |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Rango de temperatura de funcionamiento | — | -40C to +125C |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Topology Support | — | Half-bridge, low-side, high-side |