1ED3124MC12HXUMA1 vs 1EDN7146UXTSA1 对比

详细并排对比 1ED3124MC12HXUMA1 出自 Infineon 和 1EDN7146UXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 量产中
Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 量产中

规格对比

参数 1ED3124MC12HXUMA1 1EDN7146UXTSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.45 $0.82
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) —
Number of Drivers 1 —
输出数量 1 —
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) —
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
上升时间 15 ns [DATA_NEEDED: typical rise time ns]
下降时间 30 ns [DATA_NEEDED: typical fall time ns]
工作温度 -40 C to +125 C —
封装 PG-DSO-8 (DSO-8) PG-VSON-1 (6-pin with exposed pad)
安装类型 Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
RoHS 状态 Compliant Compliant
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
工作温度范围 — -40C to +125C
Target Transistor — GaN SG HEMT or power MOSFET
MSL 等级 — [DATA_NEEDED: MSL rating]
Topology Support — Half-bridge, low-side, high-side

数据手册与资源

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