1EDN7136UXTSA1 vs 2ED21064S06JXUMA1 Comparación
Comparación detallada lado a lado de 1EDN7136UXTSA1 por Infineon y 2ED21064S06JXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1EDN7136UXTSA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,74 | $0,85 |
| Función | High-side / Low-side gate driver IC | High-Side and Low-Side Gate Driver |
| Driven Device Type | GaN HEMT, N-channel MOSFET | — |
| Número de salidas | 2 (high-side and low-side) | — |
| Peak Source Current | 1 A | — |
| Peak Sink Current | 2 A | — |
| Driver Supply Voltage (Max) | 200 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | Truly Differential Input (TDI) | — |
| Active Miller Clamp | Yes (integrated) | — |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | — |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | — |
| Rango de temperatura de funcionamiento | -40 C to +150 C | — |
| Encapsulado | TSNP-6 with exposed pad (PG-VSON-1) | PG-DSO-14 (14-pin SOIC) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | ROHS3 Compliant |
| Lead-Free | Yes | — |
| Sin halógenos | Yes (per Infineon product family convention) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| Topología | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Temperatura de funcionamiento | — | -40C to +125C |
| Negative Gate Drive Robustness | — | -0.7 V |