1EDN7136UXTSA1 vs 2ED21064S06JXUMA1 Vergleich

Detaillierter Direktvergleich von 1EDN7136UXTSA1 von Infineon und 2ED21064S06JXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDN7136UXTSA1 2ED21064S06JXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,74 $0,85
Funktion High-side / Low-side gate driver IC High-Side and Low-Side Gate Driver
Driven Device Type GaN HEMT, N-channel MOSFET —
Anzahl der Ausgänge 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Betriebstemperaturbereich -40 C to +150 C —
Gehäuse TSNP-6 with exposed pad (PG-VSON-1) PG-DSO-14 (14-pin SOIC)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant ROHS3 Compliant
Lead-Free Yes —
Halogenfrei Yes (per Infineon product family convention) —
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Configuration — Half-Bridge (2 outputs, non-inverting)
Topologie — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
Betriebstemperatur — -40C to +125C
Negative Gate Drive Robustness — -0.7 V

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern