1EDN7136UXTSA1 vs 2ED21064S06JXUMA1 Comparação
Comparação detalhada lado a lado de 1EDN7136UXTSA1 por Infineon e 2ED21064S06JXUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | 1EDN7136UXTSA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | Power MOSFET Drivers | Power MOSFET Drivers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,74 | $0,85 |
| Função | High-side / Low-side gate driver IC | High-Side and Low-Side Gate Driver |
| Driven Device Type | GaN HEMT, N-channel MOSFET | — |
| Número de saídas | 2 (high-side and low-side) | — |
| Peak Source Current | 1 A | — |
| Peak Sink Current | 2 A | — |
| Driver Supply Voltage (Max) | 200 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | Truly Differential Input (TDI) | — |
| Active Miller Clamp | Yes (integrated) | — |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | — |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | — |
| Faixa de temperatura de operação | -40 C to +150 C | — |
| Encapsulamento | TSNP-6 with exposed pad (PG-VSON-1) | PG-DSO-14 (14-pin SOIC) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | ROHS3 Compliant |
| Lead-Free | Yes | — |
| Livre de halogênio | Yes (per Infineon product family convention) | — |
| Nível MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| Topologia | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Temperatura de operação | — | -40C to +125C |
| Negative Gate Drive Robustness | — | -0.7 V |