1EDN7136UXTSA1 vs 2ED21064S06JXUMA1 Comparison

Detailed side-by-side comparison of 1EDN7136UXTSA1 by Infineon and 2ED21064S06JXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7136UXTSA1 2ED21064S06JXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Function High-side / Low-side gate driver IC High-Side and Low-Side Gate Driver
Driven Device Type GaN HEMT, N-channel MOSFET —
Number of Outputs 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Operating Temperature Range -40 C to +150 C —
Package TSNP-6 with exposed pad (PG-VSON-1) PG-DSO-14 (14-pin SOIC)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant ROHS3 Compliant
Lead-Free Yes —
Halogen Free Yes (per Infineon product family convention) —
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Configuration — Half-Bridge (2 outputs, non-inverting)
Topology — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
Operating Temperature — -40C to +125C
Negative Gate Drive Robustness — -0.7 V

Datasheets & Resources

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