1EDN7136UXTSA1 vs 2ED21064S06JXUMA1 比較
詳細な並列比較: 1EDN7136UXTSA1 メーカー: Infineon および 2ED21064S06JXUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | 1EDN7136UXTSA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.74 | $0.85 |
| 機能 | High-side / Low-side gate driver IC | High-Side and Low-Side Gate Driver |
| Driven Device Type | GaN HEMT, N-channel MOSFET | — |
| 出力数 | 2 (high-side and low-side) | — |
| Peak Source Current | 1 A | — |
| Peak Sink Current | 2 A | — |
| Driver Supply Voltage (Max) | 200 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | Truly Differential Input (TDI) | — |
| Active Miller Clamp | Yes (integrated) | — |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | — |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | — |
| 動作温度範囲 | -40 C to +150 C | — |
| パッケージ | TSNP-6 with exposed pad (PG-VSON-1) | PG-DSO-14 (14-pin SOIC) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | ROHS3 Compliant |
| Lead-Free | Yes | — |
| ハロゲンフリー | Yes (per Infineon product family convention) | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| トポロジー | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| 動作温度 | — | -40C to +125C |
| Negative Gate Drive Robustness | — | -0.7 V |