1EDN7136UXTSA1 vs 2ED21064S06JXUMA1 对比

详细并排对比 1EDN7136UXTSA1 出自 Infineon 和 2ED21064S06JXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED21064S06JXUMA1 2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 ✓ 量产中

规格对比

参数 1EDN7136UXTSA1 2ED21064S06JXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $0.85
功能 High-side / Low-side gate driver IC High-Side and Low-Side Gate Driver
Driven Device Type GaN HEMT, N-channel MOSFET —
输出数量 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
工作温度范围 -40 C to +150 C —
封装 TSNP-6 with exposed pad (PG-VSON-1) PG-DSO-14 (14-pin SOIC)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant ROHS3 Compliant
Lead-Free Yes —
无卤 Yes (per Infineon product family convention) —
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Configuration — Half-Bridge (2 outputs, non-inverting)
拓扑 — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
工作温度 — -40C to +125C
Negative Gate Drive Robustness — -0.7 V

数据手册与资源

浏览全部产品 创建 BOM 获取报价