BAT43-R0 vs BAT43 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BAT43-R0 sa pamamagitan ng Taiwan Semiconductor at BAT43 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Taiwan Semiconductor
BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor
BAT43-R0 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BAT43-R0 | BAT43 |
|---|---|---|
| Brand | Taiwan Semiconductor | STMicroelectronics |
| Kategorya | Diodes | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Diode Type | Small Signal Schottky Barrier | — |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | 30 V |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Maximum Forward Voltage (VF) | 1 V | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 4 A | — |
| Power Dissipation | 200 mW | — |
| Junction Operating Temperature | -65C to +125C | — |
| Reverse Recovery | Fast switching (Schottky, majority carrier) | — |
| Packhaging | DO-35 axial glass (through hole) | DO-35 (glass axial, through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| ESD Protection | Fast guard ring against excessive voltage (ESD) | Integrated guard ring against excessive voltage |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Forward Voltage Turn-On | Very low turn-on voltage | — |
| Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | — |
| Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Packaging Type | [DATA_NEEDED: tape/reel or bulk option] | — |
| Device Type | — | Small Signal Schottky Diode |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Pwersang Pinahihigpit (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |