BAT43-R0 vs BAT43 Karşılaştırma

Ayrıntılı yan yana karşılaştırma BAT43-R0 tarafından Taiwan Semiconductor ve BAT43 tarafından STMicroelectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre BAT43-R0 BAT43
Marka Taiwan Semiconductor STMicroelectronics
Kategori Diodes Diodes
Yaşam Döngüsü Durumu Aktif Aktif
Diode Type Small Signal Schottky Barrier —
Repetitive Peak Reverse Voltage (VRRM) 30 V 30 V
Average Forward Current (IF(AV)) 200 mA —
Maximum Forward Voltage (VF) 1 V —
Non-Repetitive Peak Forward Surge Current (IFSM) 4 A —
Power Dissipation 200 mW —
Junction Operating Temperature -65C to +125C —
Reverse Recovery Fast switching (Schottky, majority carrier) —
Paket DO-35 axial glass (through hole) DO-35 (glass axial, through-hole)
Montaj Türü Through Hole Through Hole
Configuration Single diode Single diode
ESD Protection Fast guard ring against excessive voltage (ESD) Integrated guard ring against excessive voltage
RoHS Durumu Compliant [DATA_NEEDED: RoHS status]
Forward Voltage Turn-On Very low turn-on voltage —
Capacitance (Cj) [DATA_NEEDED: junction capacitance] —
Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Packaging Type [DATA_NEEDED: tape/reel or bulk option] —
Device Type — Small Signal Schottky Diode
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
Güç Tüketimi (Ptot) — 200 mW at Tl = 65 C
Technology — Metal-to-silicon Schottky barrier
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
İşletim Sıcaklığı — [DATA_NEEDED: operating temperature range]

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