BAT43-R0 vs BAT43 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BAT43-R0 disebabkan oleh Taiwan Semiconductor dan BAT43 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BAT43-R0 BAT43
Merek Taiwan Semiconductor STMicroelectronics
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Diode Type Small Signal Schottky Barrier —
Repetitive Peak Reverse Voltage (VRRM) 30 V 30 V
Average Forward Current (IF(AV)) 200 mA —
Maximum Forward Voltage (VF) 1 V —
Non-Repetitive Peak Forward Surge Current (IFSM) 4 A —
Power Dissipation 200 mW —
Junction Operating Temperature -65C to +125C —
Reverse Recovery Fast switching (Schottky, majority carrier) —
Kemasan DO-35 axial glass (through hole) DO-35 (glass axial, through-hole)
Jenis Pemasangan Through Hole Through Hole
Configuration Single diode Single diode
ESD Protection Fast guard ring against excessive voltage (ESD) Integrated guard ring against excessive voltage
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Forward Voltage Turn-On Very low turn-on voltage —
Capacitance (Cj) [DATA_NEEDED: junction capacitance] —
Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Packaging Type [DATA_NEEDED: tape/reel or bulk option] —
Device Type — Small Signal Schottky Diode
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
Pembuangan Kuasa (Ptot) — 200 mW at Tl = 65 C
Technology — Metal-to-silicon Schottky barrier
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
Suhu Operasi — [DATA_NEEDED: operating temperature range]

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