FDD8896-F085 vs FDD8896 Comparación
Comparación detallada lado a lado de FDD8896-F085 por onsemi y FDD8896 por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | FDD8896-F085 | FDD8896 |
|---|---|---|
| Marca | onsemi | onsemi |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Obsolete | Fin de vida |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,32 | $0,62 |
| Manufacturer | onsemi (Fairchild Semiconductor) | Fairchild Semiconductor (now onsemi) |
| FET Type | N-Channel MOSFET | — |
| Technology | PowerTrench (Trench-Gate) | PowerTrench (trench MOSFET) |
| Drain-Source Voltage (Vdss) | 30 V | 30 V |
| Continuous Drain Current (Id) at Tc=25C | 94 A | — |
| Continuous Drain Current (Id) at Ta=25C | 17 A | — |
| Rds(on) Max at Vgs=10V | 5.7 mOhm | — |
| Maximum Power Dissipation (Pd) at Tc=25C | 80 W | — |
| Gate-Source Voltage (Vgs) Max | 20 V | [DATA_NEEDED: Vgs Max] |
| Gate Threshold Voltage (Vgs(th)) Typ | 2.0 V | — |
| Rango de temperatura de funcionamiento | -55C to +150C (Tj) | — |
| Encapsulado | TO-252 (DPAK) | TO-252 (DPAK), 3-Pin (2+Tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) | 3 |
| Automotive Qualification | AEC-Q101 | — |
| RoHS / Halogen-Free Status | Compliant / Halogen-Free | — |
| Lead-Free | Yes | — |
| Nivel MSL | 1 | — |
| Tipo de transistor | — | N-Channel PowerTrench MOSFET |
| Continuous Drain Current (Id) at Ta | — | 17 A |
| Continuous Drain Current (Id) at Tc | — | 94 A |
| Drain-Source On-Resistance (rDS(ON)) | — | 5.7 mOhm |
| Power Dissipation (Pd) at Tc | — | 80 W |
| Gate Charge (Qg) | — | [DATA_NEEDED: Gate Charge] |
| Configuration | — | Single FET |
| Typical Application | — | DC/DC converters, synchronous PWM controllers |
| Packing | — | Tape & Reel (T/R) |