FDD8896-F085 vs FDD8896 对比

详细并排对比 FDD8896-F085 出自 onsemi 和 FDD8896 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 FDD8896-F085 FDD8896
品牌 onsemi onsemi
分类 MOSFETs MOSFETs
生命周期状态 Obsolete 停产
库存状态 有库存 有库存
单价(USD) $0.32 $0.62
Manufacturer onsemi (Fairchild Semiconductor) Fairchild Semiconductor (now onsemi)
FET Type N-Channel MOSFET —
Technology PowerTrench (Trench-Gate) PowerTrench (trench MOSFET)
Drain-Source Voltage (Vdss) 30 V 30 V
Continuous Drain Current (Id) at Tc=25C 94 A —
Continuous Drain Current (Id) at Ta=25C 17 A —
Rds(on) Max at Vgs=10V 5.7 mOhm —
Maximum Power Dissipation (Pd) at Tc=25C 80 W —
Gate-Source Voltage (Vgs) Max 20 V [DATA_NEEDED: Vgs Max]
Gate Threshold Voltage (Vgs(th)) Typ 2.0 V —
工作温度范围 -55C to +150C (Tj) —
封装 TO-252 (DPAK) TO-252 (DPAK), 3-Pin (2+Tab)
安装类型 Surface Mount Surface Mount
引脚数量 3 (Gate, Drain, Source) 3
Automotive Qualification AEC-Q101 —
RoHS / Halogen-Free Status Compliant / Halogen-Free —
Lead-Free Yes —
MSL 等级 1 —
晶体管类型 — N-Channel PowerTrench MOSFET
Continuous Drain Current (Id) at Ta — 17 A
Continuous Drain Current (Id) at Tc — 94 A
Drain-Source On-Resistance (rDS(ON)) — 5.7 mOhm
Power Dissipation (Pd) at Tc — 80 W
Gate Charge (Qg) — [DATA_NEEDED: Gate Charge]
Configuration — Single FET
Typical Application — DC/DC converters, synchronous PWM controllers
Packing — Tape & Reel (T/R)

数据手册与资源

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