FDD8896-F085 vs FDD8896 Comparison

Detailed side-by-side comparison of FDD8896-F085 by onsemi and FDD8896 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter FDD8896-F085 FDD8896
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Obsolete Eol
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.62
Manufacturer onsemi (Fairchild Semiconductor) Fairchild Semiconductor (now onsemi)
FET Type N-Channel MOSFET β€”
Technology PowerTrench (Trench-Gate) PowerTrench (trench MOSFET)
Drain-Source Voltage (Vdss) 30 V 30 V
Continuous Drain Current (Id) at Tc=25C 94 A β€”
Continuous Drain Current (Id) at Ta=25C 17 A β€”
Rds(on) Max at Vgs=10V 5.7 mOhm β€”
Maximum Power Dissipation (Pd) at Tc=25C 80 W β€”
Gate-Source Voltage (Vgs) Max 20 V [DATA_NEEDED: Vgs Max]
Gate Threshold Voltage (Vgs(th)) Typ 2.0 V β€”
Operating Temperature Range -55C to +150C (Tj) β€”
Package TO-252 (DPAK) TO-252 (DPAK), 3-Pin (2+Tab)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) 3
Automotive Qualification AEC-Q101 β€”
RoHS / Halogen-Free Status Compliant / Halogen-Free β€”
Lead-Free Yes β€”
MSL Level 1 β€”
Transistor Type β€” N-Channel PowerTrench MOSFET
Continuous Drain Current (Id) at Ta β€” 17 A
Continuous Drain Current (Id) at Tc β€” 94 A
Drain-Source On-Resistance (rDS(ON)) β€” 5.7 mOhm
Power Dissipation (Pd) at Tc β€” 80 W
Gate Charge (Qg) β€” [DATA_NEEDED: Gate Charge]
Configuration β€” Single FET
Typical Application β€” DC/DC converters, synchronous PWM controllers
Packing β€” Tape & Reel (T/R)

Datasheets & Resources

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