MPX2010DP vs MPXC2011DT1 Comparación

Comparación detallada lado a lado de MPX2010DP por NXP Semiconductors y MPXC2011DT1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MPX2010DP MPX2010DP - 10 kPa Differential Pressure Sensor | NXP/STMicro

MPX2010DP - 10 kPa Differential Pressure Sensor | NXP/STMicro

MPX2010DP ✓ Activo
NXP Semiconductors
MPXC2011DT1 MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 ✓ Activo

Comparación de especificaciones

Parámetro MPX2010DP MPXC2011DT1
Marca NXP Semiconductors NXP Semiconductors
Categoría Pressure Sensors Pressure Sensors
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $8,50 $14,95
Tipo de sensor Differential Pressure Sensor —
Pressure Range 0 to 10 kPa (0 to 1.45 PSI) —
Technology Piezoresistive (silicon strain gauge bridge) Piezoresistive silicon strain gauge
Tipo de salida Analog voltage, Wheatstone bridge (mV level) Analog Wheatstone bridge (ratiometric)
Typical Full-Scale Span 25 mV at 10 V excitation —
Zero Pressure Offset 0 mV nominally (±1.0 mV max) —
Tensión de alimentación 10 V DC typical (max 16 V) —
Linearity ±0.05% (typ) —
Temperature Compensation 0 °C to +85 °C (on-chip) —
Temperatura de funcionamiento -40 °C to +125 °C 0 °C to +85 °C
Response Time 1.0 ms (typical) —
Maximum Overpressure 75 kPa —
Burst Pressure 200 kPa —
Port Configuration Dual ports (differential), 0.19 inch / 4.93 mm tubes —
Package / Mounting 4-SIP Module (through-hole with axial tubes) —
Media Compatibility Dry air or non-corrosive gas —
Estado RoHS Compliant [DATA_NEEDED: RoHS status not in web data]
Pressure Type — Differential
Operating Pressure Range — 0 kPa to 10 kPa (0 PSI to 1.45 PSI)
Full-Scale Output — 25 mV typical at 10 V excitation
Sensitivity — 2.5 mV/kPa typical
Excitation Voltage — 3 V DC to 10 V DC (10 V nominal)
Encapsulado — 4-SSIP Chip Pak module, side port
Port Style — Female, 3.25 mm (0.128 in) barbed side port
Termination Style — Through-hole PCB, 4 leads
Compensation — On-chip temperature compensated and calibrated
Module Dimensions — 7.6 mm x 12.8 mm nominal
Tipo de montaje — Through-hole (PCB mount with side-port tubing)

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