K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
Référence : K4A8G085WB-BICR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $7.2 | $7,20 |
| 10 | $6.55 | $65,50 |
| 100 | $5.8 | $580,00 |
| 500 | $5.1 | $2 550,00 |
| 1 000 | $4.65 | $4 650,00 |
| 3 000 | $4.25 | $12 750,00 |
K4A8G085WB-BICR Présentation
An SDRAM (synchronous dynamic random-access memory) is a type of volatile memory that synchronizes data transfers with the system clock. DDR4 SDRAM, the fourth generation of double-data-rate memory, uses a 1.2V supply and transfers data on both edges of the clock, doubling effective bandwidth compared to previous generations. In the memory hierarchy, this device sits at the component level beneath registered DIMM modules and is controlled by a memory controller in a CPU, FPGA, or SoC to form the main system memory or high-bandwidth data buffer.
Key features include 1G x 8 organization, 2400Mbps data rate (DDR4-2400), 8192 refresh cycles per bank, 16 banks, and 78-ball FBGA surface-mount construction. The industrial temperature grade enables use in equipment exposed to a wider temperature range than standard commercial DDR4. The x8 data path provides a good balance between density and signal count, allowing eight devices to be placed on a 64-bit memory bus.
Technical depth: Samsung's B-die is widely documented for good timing margins and overclocking headroom; for DRAM controllers, the address and command timing are defined by the DDR4 JEDEC specification. Refresh management is essential because each of the 8192 rows must be refreshed within the tREFI interval, so the memory controller must handle periodic refresh commands. Signal integrity is strongly dependent on carefully routed DQS/DQ groups and termination, which is why high-speed DDR4 layout is critical.
Typical applications include server and data-center memory modules, industrial single-board computers, networking line cards, video surveillance recorders, and FPGA-based edge-AI acceleration. The industrial grade is particularly suited for outdoor telecom cabinets, factory automation, and transportation infrastructure where ambient temperature can vary outside the commercial range.
Design consideration: always verify the exact temperature grade and timing parameters from the Samsung K4A8G085WB datasheet before production; the BICR suffix is industrial, but the precise speed and temperature columns should be confirmed from the ordering information.
Alternatives de remplacement direct pour K4A8G085WB-BICR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4A8G085WB-BICR (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature, Burst Length, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G085WB-BCRC
✅ Remplacement direct✓ En stock
$6.8 / unité
Voir la fiche technique →K4A8G085WB-BIRC
✅ Remplacement direct✓ En stock
$6.5625 / unité
Voir la fiche technique →K4A8G085WB-BITD
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$3.8 / unité
Voir la fiche technique →K4A8G085WB-BIWE
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.5 / unité
Voir la fiche technique →K4A8G085WB-BICH
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$4.96 / unité
Voir la fiche technique →MT40A1G8SA-062E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.05 / unité
Voir la fiche technique →H5AN8G6NDJR-XNC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$55.6818 / unité
Voir la fiche technique →MT40A1G8SA-075:E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3 / unité
Voir la fiche technique →K4A8G085WB-BICR Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 1G x 8 |
| Débit de données | 2400 Mbps |
| Tension d'alimentation | 1.2 V (VDD/VDDQ) |
| Number of Banks | 16 |
| Refresh Cycles | 8192 |
| Boîtier | 78-ball FBGA |
| Nombre de broches | 78 |
| Type de montage | Surface Mount |
| Temperature Grade | Industrial (I-grade) |
| Die / Process | Samsung 8Gb B-die DDR4 |
| Speed Grade | DDR4-2400 (PC4-19200) |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
| Refresh Management | Row refresh, auto-refresh and self-refresh supported |
Guide de configuration des broches du K4A8G085WB-BICR 78-ball fbga
Configuration des broches du K4A8G085WB-BICR (boîtier 78-ball fbga). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K4A8G085WB-BICR.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4A8G085WB-BICR convient pour 6 applications: Server and Data-Center DIMM, Industrial Embedded Single-Board Computer, FPGA Accelerator and Edge AI, Network Router and Switch, Video Surveillance DVR, Telecom Baseband Unit.
Server and Data-Center DIMM
The K4A8G085WB-BICR is the core DRAM component for unbuffered or registered DIMMs in server, cloud, and data-center platforms. Its 1G x 8 organization lets eight or nine devices form a 64-bit/72-bit rank, while 2400Mbps operation delivers high bandwidth per DIMM rank. The 1.2V supply reduces line-card power consumption. Recommended products include STM32F746BET6 for prototype memory-controller testing and XC7Z020 as an FPGA/SoC with DDR4 controller evaluation support.
Recommandé
Industrial Embedded Single-Board Computer
Industrial SBCs often operate in equipment enclosures without tight climate control, so the K4A8G085WB-BICR industrial temperature grade is a primary selection reason. The 78-FBGA package and 1.2V operation allow dense placement on mechanically rugged boards, while 2400Mbps data rate supports Ethernet, fieldbus, and HMI processing. A PCB can reuse Samsung B-die layout guidelines, reducing bring-up time. Recommended products include STM32F746BET6 as the memory controller and STM32H747BGT6 for higher-performance dual-core designs.
Recommandé
FPGA Accelerator and Edge AI
FPGA-based edge-AI accelerators require low-latency, high-bandwidth memory for inference data, and the K4A8G085WB-BICR delivers that through a standard DDR4 interface on Xilinx/AMD and Intel FPGA boards. With a 16-bank architecture and 8192 refresh cycles, the memory controller can schedule refreshes to avoid critical inference reads. At 2400Mbps, one x8 rank provides roughly 2.4GB/s peak bandwidth. The industrial grade supports field-deployed smart cameras and gateways. Recommended products include XC7Z020 and XCKU5P-2FFVB676I.
Recommandé
Network Router and Switch
Network equipment line cards buffer routing tables, ACLs, and packet descriptors; the K4A8G085WB-BICR's 8Gb capacity and x8 organization pair well with commodity DDR4 buses. The 2400Mbps throughput gives packet processors fast access to memory, while the 78-ball FBGA keeps a small footprint on multilayer boards. Routers deployed in remote telecom cabinets benefit from the industrial temperature grade. Recommended products include MT40A512M16JY-075E as a companion memory and STM32H747BGT6 for control-plane management.
Recommandé
Video Surveillance DVR
High-resolution video recorders continuously write HD/4K streams, requiring predictable SDRAM bandwidth and power efficiency. The K4A8G085WB-BICR, with 2400Mbps and 1.2V, can buffer multiple video channels from an encoder/decoder SoC. Its 1G x 8 organization permits simple chaining of eight devices to create 64-bit memory arrays. The industrial temperature grade also allows installation in unventilated security cabinets. Recommended products include STM32F746BET6 for HDMI/display control and MT40A512M16LY-075 for frame buffering.
Recommandé
Telecom Baseband Unit
Telecom baseband units process many parallel data streams under strict ambient temperature limits, so the K4A8G085WB-BICR industrial temperature grade is a significant advantage. The DDR4 interface provides high bandwidth for PHY processing, while the x8 organization enables conservative layout in outdoor radio equipment. The 1.2V supply reduces thermal load in sealed enclosures. Pair with H5AN8G6NDJR-XNC or MT40A1G8SA-062E after timing verification for system-level memory expansion. Recommended products include XCKU5P-2FFVB676I as the baseband accelerator.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G085WB-BICR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G085WB-BCRC | K4A8G085WB-BIRC | MT40A1G8SA-062E | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Package | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Refresh Cycles | 8192 | 8192 | 8192 | 8192 | 8192 |
Principaux différenciateurs
- Industrial temperature grade in Samsung B-die x8 family (vs K4A8G085WB-BCRC)
- xFinity data path in standard 78-FBGA package (vs K4A8G045WB-BCPB)
- Samsung B-die ecosystem and controller support (vs MT40A1G8SA-062E)
Notes de conception
Place a 0.1 uF ceramic capacitor close to each VDD/VDDQ ball and a 4.7 uF bulk capacitor near the device. DDR4 uses a 1.2V supply for both core and I/O; good high-frequency decoupling on the 1.2V rail is essential to keep the supply impedance low and avoid data corruption. Follow the Samsung K4A8G085WB layout guidelines for the VDD and VSS pin distribution.
Route DQ, DQS, and DM groups as matched-length traces with continuous reference planes. For a 2400Mbps x8 DDR4 interface, each DQS/DQ group should be length-matched within a few millimeters and the impedance should be controlled to 40-50 ohms. Avoid vias stubs on the data lines and include series termination resistors if recommended by the board-level DDR4 simulation.
The industrial temperature grade supports wider ambient ranges, but the device still dissipates power during refresh and read/write bursts. Provide a solid thermal path from the FBGA package to the PCB ground and thermal relief vias, especially in sealed telecom or industrial enclosures. Confirm the actual temperature range from the datasheet suffix table before committing to extreme ambient specifications.
Informations de conformité
Samsung memory products are generally lead-free and RoHS-compliant, but exact certificate should be obtained from the manufacturer datasheet or product page.
