K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
MPN: K4A8G165WC-BCWE ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $47.51 | $47.51 |
| 10 | $45.14 | $451.40 |
| 100 | $42.76 | $4,276.00 |
| 500 | $40.39 | $20,195.00 |
| 1,000 | $38.01 | $38,010.00 |
Drop-in alternatives for K4A8G165WC-BCWE — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A8G165WB-BCWE
✅ Drop-In✓ In Stock
$6.55 / Unit
View Datasheet →K4A8G165WC-BCTD
✅ Drop-In✓ In Stock
$41.2 / Unit
View Datasheet →K4A8G165WC-BCRC
✅ Drop-In✓ In Stock
$23 / Unit
View Datasheet →K4A8G165WC-BCPB
✅ Drop-In✓ In Stock
$1.31 / Unit
View Datasheet →MT40A512M16GE-075E:B
✅ Drop-In📋 Reference alternative (not in catalog)
K4A8G165WC-BCWE Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 512M x 16 |
| Data Rate | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD/VDDQ) | 1.2 V |
| Operating Temperature | 0C to +85C |
| Package | 96FBGA (96-ball Fine-Pitch BGA) |
| Configuration | x16 |
| Die Generation | C-die (8Gb C) |
| Interface | Parallel, DDR4 (JEDEC) |
| Data Mask | Supported |
| CRC Function | Supported |
| ZQ Calibration | Supported |
| Dynamic On-Die Termination | Supported |
| Auto Precharge | Supported |
| Asynchronous Reset | Supported |
| Mounting Type | Surface Mount |
| JEDEC Compliance | DDR4 standard compliant |
K4A8G165WC-BCWE 96fbga (96-ball fine-pitch bga) Pin Configuration Guide
Complete pinout information for K4A8G165WC-BCWE (96fbga (96-ball fine-pitch bga) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4A8G165WC-BCWE.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G165WC-BCWE is suitable for 6 applications: Industrial Controllers and PLCs, Embedded Computing Modules (SOM/COM), Networking and Communication Equipment, Firmware Boot and Data Logging Systems, Automotive-adjacent Telematics and Display Units (non-safety), Test and Measurement Instrumentation.
Industrial Controllers and PLCs
Industrial controllers need reliable DRAM for run-time data, logging, and HMI buffering. The K4A8G165WC-BCWE fits this role with its 8Gb density and x16 organization, which simplifies 16-bit or 32-bit memory buses on embedded controller boards. CRC and ZQ calibration features improve link robustness in electrically noisy factory environments, while dynamic ODT reduces termination components. At 0C to +85C it suits enclosed cabinets; designs with cold-start requirements should select the BCTD grade instead. Running the bus at DDR4-3200 leaves timing margin when firmware runs it at 2666.
Recommended
Embedded Computing Modules (SOM/COM)
System-on-module designs use x16 DDR4 components in 32-bit or 64-bit buses to reach 4-16 GB configurations. The K4A8G165WC-BCWE's 8Gb density allows 2 GB per 64-bit bank group with only four devices, keeping BOM count low. Its 96FBGA footprint matches JEDEC x16 DDR4, so modules can dual-source with Micron MT40A512M16GE-075E:B without PCB rework. The 3200 Mbps bin supports high-bandwidth SoCs, while CRC and CA-parity-class features protect against bit errors during extended thermal soaks typical of edge computing deployments.
Recommended
Networking and Communication Equipment
Switches, routers, and gateway line cards buffer packets in DRAM where bandwidth determines throughput. The K4A8G165WC-BCWE delivers DDR4-3200 bandwidth per device, and multiple x16 devices can be ganged for wider buses. Data mask support enables efficient partial writes for packet buffer management, and the asynchronous reset function allows quick recovery on watchdog events. Its 0C to +85C rating covers managed equipment rooms, while telecom-outdoor variants should use extended-temperature grades. On-die termination reduces signal-integrity effort on high-layer-count backplane-connected boards.
Recommended
Firmware Boot and Data Logging Systems
Industrial gateways and data loggers use DDR4 SDRAM as execution memory for firmware and as a write buffer ahead of NAND flash storage. The K4A8G165WC-BCWE provides 1 GB of x16 working memory, adequate for Linux-class logging stacks. ZQ calibration maintains output impedance accuracy over temperature drift, protecting data integrity during long unattended runs. Pairing it with Samsung NAND from the K9 family creates a single-vendor memory BOM, simplifying qualification. Designers should budget refresh current in the 1.2V rail calculation for battery-backed loggers.
Recommended
Automotive-adjacent Telematics and Display Units (non-safety)
Infotainment-adjacent telematics and digital display modules in commercial fleets use DDR4 for map buffering and UI rendering. The K4A8G165WC-BCWE's 3200 Mbps rate supports display frame buffers at x16 widths, and its CRC feature guards against visual artifacts on long PCB traces. Note this specific part is a commercial 0C to +85C grade and is not AEC-Q100 qualified - it fits cabin-environment, non-safety applications only. Automotive-qualified programs should select Samsung automotive DDR4 grades and validate the extended temperature and reliability requirements accordingly.
Recommended
Test and Measurement Instrumentation
Bench instruments, data-acquisition units, and logic analyzers require large capture buffers with deterministic access. The K4A8G165WC-BCWE's x16 organization and data-mask capability let acquisition ASICs or FPGAs write partial bursts efficiently, while DDR4-3200 bandwidth sustains streaming capture rates. Bank-group architecture reduces turnaround penalties during record-and-playback cycles. The 96FBGA footprint supports second-sourcing with Micron parts for long product lifecycles typical of instrumentation. Board designers should follow Samsung's fly-by routing and VREFCA decoupling guidance for stable training across units.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G165WC-BCWE — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G165WB-BCWE | K4A8G165WC-BCTD | K4A8G165WC-BCRC | K4A8G165WC-BCPB | MT40A512M16GE-075E:B |
|---|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA - same | 96FBGA - same | 96FBGA - same | 96FBGA - same | 96FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | [DATA_NEEDED] | 2600 Mbps | 2400 Mbps | 3200 Mbps class |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Range | 0C to +85C | 0C to +85C | Extended (TD grade) | 0C to +85C | 0C to +85C | [DATA_NEEDED] |
| Die Generation | C-die | B-die | C-die | C-die | C-die | Micron E-die class |
Key Differentiators
- Top speed bin in the WC family (vs K4A8G165WC-BCRC)
- Drop-in second source availability (vs MT40A512M16GE-075E:B)
- Commercial grade trade-off (vs K4A8G165WC-BCTD)
Design Notes
Route address/command lines in fly-by topology per Samsung's DDR4 design guidance and program write leveling/ODT accordingly. Keep DQS/DQ length matching within plus/minus a few mils per segment and reference VREFCA with clean decoupling. The 3200 Mbps bin leaves little timing margin, so simulate IBIS models before tape-out. After assembly, run full memory training on every unit; do not hard-code training values across die-generation swaps (B-die vs C-die).
Estimated: at 1.2V, a single x16 DDR4 device at moderate utilization draws on the order of a few hundred milliamps of dynamic current, so budget the VDD/VDDQ rail at 1 A or more per device in your DC-DC design (e.g., TPS54218 family). Separate VDDQ plane from VDD, add bulk plus 0.1 uF per ball-bank decoupling, and account for DDR4 refresh current in low-power duty cycles. Verify VPP rail requirements per the Samsung datasheet power-up sequence.
Do not substitute lower speed bins (BCRC 2600 Mbps, BCPB 2400 Mbps) into a DDR4-3200 timing design - setup/hold violations cause intermittent failures. Do not use the BCWE grade below 0C or above +85C; the commercial grade will not meet cold-start industrial specs. Note some distributor listings state 0 to +95C while others state 0 to +85C - verify the operating range in the official Samsung datasheet for your exact date code before finalizing thermal design.
Follow JEDEC DDR4 x16 ballout routing practice: keep the DRAM within the controller's allowed flight time, use Daisy-chain address/command routing with end termination, and place the 96FBGA device with the VSS ball field tied to a solid ground plane through multiple vias. For dual-sourcing with Micron MT40A512M16GE-075E:B, verify package height and ball pitch dimensions in both mechanical drawings to confirm reflow profile compatibility.
Compliance Information
Compliance declarations were not present in the retrieved web data. Request formal RoHS/REACH certificates from Samsung or the distributor at order time. This is a commercial-grade DDR4 SDRAM, not an AEC-Q100 automotive-qualified part.
