IPW60R080P7XKSA1 vs IPW60R041C6FKSA1 Comparaison
Comparaison détaillée côte à côte de IPW60R080P7XKSA1 par Infineon et IPW60R041C6FKSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPW60R080P7XKSA1 | IPW60R041C6FKSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,65 | $5,40 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 37 A | — |
| Power Dissipation (PD, Tc) | 129 W | — |
| RDS(on) (typ) | 69 mΩ at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V (typ, per datasheet family) | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Rise Time / Fall Time (tr/tf) | [DATA_NEEDED: tr/tf value] | — |
| Plage de température de fonctionnement | -55 C to +150 C (junction) | -55°C to +150°C |
| Boîtier | PG-TO247-3 (TO-247, 3-pin through-hole) | PG-TO247-3-1 (TO-247-3) |
| Type de montage | Through Hole | Through Hole |
| Packaging | Tube (XKSA1 ordering suffix) | — |
| Statut RoHS | Compliant | Compliant |
| Technology | — | CoolMOS™ C6 (Superjunction N-channel) |
| Continuous Drain Current (ID, Tc=25°C) | — | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | — | 481 W |
| On-State Resistance (RDS(on)) | — | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V typical |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rise Time (tr) | — | [DATA_NEEDED: tr value] |
| Fall Time (tf) | — | [DATA_NEEDED: tf value] |
| Niveau MSL | — | Not Applicable (Through-hole) |
| Lead-Free | — | Yes |