IPW60R080P7XKSA1 vs IPW60R041C6FKSA1 Comparación
Comparación detallada lado a lado de IPW60R080P7XKSA1 por Infineon y IPW60R041C6FKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPW60R080P7XKSA1 | IPW60R041C6FKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,65 | $5,40 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 37 A | — |
| Power Dissipation (PD, Tc) | 129 W | — |
| RDS(on) (typ) | 69 mΩ at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V (typ, per datasheet family) | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Rise Time / Fall Time (tr/tf) | [DATA_NEEDED: tr/tf value] | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C (junction) | -55°C to +150°C |
| Encapsulado | PG-TO247-3 (TO-247, 3-pin through-hole) | PG-TO247-3-1 (TO-247-3) |
| Tipo de montaje | Through Hole | Through Hole |
| Packaging | Tube (XKSA1 ordering suffix) | — |
| Estado RoHS | Compliant | Compliant |
| Technology | — | CoolMOS™ C6 (Superjunction N-channel) |
| Continuous Drain Current (ID, Tc=25°C) | — | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | — | 481 W |
| On-State Resistance (RDS(on)) | — | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V typical |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rise Time (tr) | — | [DATA_NEEDED: tr value] |
| Fall Time (tf) | — | [DATA_NEEDED: tf value] |
| Nivel MSL | — | Not Applicable (Through-hole) |
| Lead-Free | — | Yes |