IPW60R080P7XKSA1 vs IPW60R041C6FKSA1 对比

详细并排对比 IPW60R080P7XKSA1 出自 Infineon 和 IPW60R041C6FKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPW60R080P7XKSA1 IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 ✓ 量产中

规格对比

参数 IPW60R080P7XKSA1 IPW60R041C6FKSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 不推荐新设计
库存状态 有库存 有库存
单价(USD) $2.65 $5.40
Manufacturer Infineon Technologies —
Product Family CoolMOS P7 —
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc) 37 A —
Power Dissipation (PD, Tc) 129 W —
RDS(on) (typ) 69 mΩ at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 3.5 V (typ, per datasheet family) —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Rise Time / Fall Time (tr/tf) [DATA_NEEDED: tr/tf value] —
工作温度范围 -55 C to +150 C (junction) -55°C to +150°C
封装 PG-TO247-3 (TO-247, 3-pin through-hole) PG-TO247-3-1 (TO-247-3)
安装类型 Through Hole Through Hole
Packaging Tube (XKSA1 ordering suffix) —
RoHS 状态 Compliant Compliant
Technology — CoolMOS™ C6 (Superjunction N-channel)
Continuous Drain Current (ID, Tc=25°C) — 77.5 A
Power Dissipation (PD, Tc=25°C) — 481 W
On-State Resistance (RDS(on)) — 41 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V typical
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Rise Time (tr) — [DATA_NEEDED: tr value]
Fall Time (tf) — [DATA_NEEDED: tf value]
MSL 等级 — Not Applicable (Through-hole)
Lead-Free — Yes

数据手册与资源

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