H58G66CK8BX147 - 8Gb x8 LPDDR5X 8533Mbps DRAM | SK hynix
Référence : H58G66CK8BX147 ✓ Actif| Qté | Prix unitaire | Total |
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| 10 | $0 | $0,00 |
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| 500 | $0 | $0,00 |
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H58G66CK8BX147 Présentation
LPDDR (Low Power Double Data Rate) SDRAM is a member of the DRAM family of volatile memory ICs optimized for mobile and power-constrained systems. Compared with standard DDR SDRAM, LPDDR devices reduce core and I/O supply voltages, add deep power-down and per-bank refresh features, and prioritize bandwidth-per-watt, making them the dominant memory technology in the smartphone, tablet, and embedded compute hierarchy under the broader power management memory IC taxonomy.
Key features include the LPDDR5X-8533 speed grade, which enables up to 8.5 Gbps per pin and multi-channel aggregate bandwidths well above LPDDR4X-class parts, a x8 I/O organization with dual chip-select supporting stacked or two-rank system configurations, and JEDEC-compliant x16/x8 single-channel SDRAM operation defined in the manufacturer's 315-ball FBGA specification. The device operates across an industrial-extended temperature range down to -25C per the FBGA specification document.
Technically, the device uses SK hynix advanced DRAM process technology with dynamic voltage scaling across the 1.05V core domain and 0.5V I/O domain, reducing active and standby power versus LPDDR5 at 1.05V, per the SK hynix LPDDR5 product page describing LPDDR5/LPDDR5X as operating below LPDDR4X voltage levels.
Typical applications include flagship smartphone SoC memory (Qualcomm Snapdragon-class platforms), AI edge accelerators requiring high bandwidth-to-power ratio, automotive infotainment and ADAS compute modules, and high-density embedded networking processors.
A key design consideration is signal integrity at 8533 Mbps: PCB trace length matching, on-die termination configuration, and VDDQ decoupling must follow the SK hynix LPDDR5 system design guide to maintain eye margins.
This page synthesizes distributor inventory signals, the manufacturer 315-ball FBGA specification, and drop-in alternative analysis not found on any single datasheet page.
Alternatives de remplacement direct pour H58G66CK8BX147 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H58G66CK8BX147 (même facteur de forme et même empreinte) — différant par Density, Organization, Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H58G66CK8BX147N
✅ Remplacement direct✓ En stock
$34.6 / unité
Voir la fiche technique →H58G66CK8BX147R
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H58G66CK8BX147V
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
H58G66CK8BX147 Valeurs maximales et caractéristiques électriques
| Type de mémoire | LPDDR5X SDRAM |
| Density | 8GB (1Gx8, 2CH, 2CS) |
| Organisation de la mémoire | x8 |
| Speed Grade | LPDDR5X-8533 (8533 Mbps/pin) |
| Supply Voltage (VDD1) | 1.8 V |
| Core Voltage (VDD2) | 1.05 V |
| I/O Voltage (VDDQ) | 0.5 V |
| Operating Voltage Range | 0.5 V to 1.8 V |
| Boîtier | 315-ball FBGA (Lead & Halogen Free) |
| Canaux | 1 channel, 2 chip selects |
| Bus Width Modes | x16 / x8 per JEDEC compliant SDRAM definition |
| Température de fonctionnement | -25C and above (per FBGA specification) |
| Standard | JEDEC compliant LPDDR5/5X SDRAM |
| Statut RoHS | Compliant (lead-free package) |
| Sans halogène | Yes |
| Type de montage | Surface Mount |
Guide de configuration des broches du H58G66CK8BX147 315-ball fbga (lead & halogen free)
Configuration des broches du H58G66CK8BX147 (boîtier 315-ball fbga (lead & halogen free)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H58G66CK8BX147.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H58G66CK8BX147 convient pour 6 applications: Flagship Smartphone Memory, AI Edge Accelerators, Automotive Infotainment and ADAS Compute, Tablets and Portable Computing, Networking and 5G Infrastructure Line Cards, Test and Measurement Instrumentation.
Flagship Smartphone Memory
The H58G66CK8BX147 fits flagship smartphone memory subsystems where its LPDDR5X-8533 speed grade supplies 8533 Mbps per pin of peak bandwidth to mobile SoCs, and its 0.5V VDDQ domain minimizes I/O power during burst transfers. In a typical smartphone board it is mounted component-down or in PoP beneath the application processor, with the 2-channel, 2CS configuration enabling rank interleaving that hides DRAM refresh latency. Compared with LPDDR4X, SK hynix data shows core voltage reduced from 1.1V to 1.05V, cutting active power at equal workload. Designers should budget trace-length matching and on-die termination settings per the SK hynix LPDDR5 system design guide to hold eye margins at 8533 Mbps.
Recommandé
AI Edge Accelerators
Edge AI modules benefit from the H58G66CK8BX147 because model weights and activations demand high bandwidth-per-watt: the 8533 Mbps speed grade with x8 organization and dual chip selects delivers burst bandwidth that keeps NPUs fed without the power cost of GDDR interfaces. The 8GB (2CH 2CS) density accommodates quantized transformer or CNN models on-device. In these designs the LPDDR5X sits on short, tightly length-matched fly-by or point-to-point traces to the SoC, and the 0.5V VDDQ rail lowers switching losses during sustained inference. Designers should use the deep power-down state between inference frames to cut standby current, and verify controller timing at the -25C low-temperature corner stated in the FBGA specification.
Recommandé
Automotive Infotainment and ADAS Compute
Automotive cockpit and ADAS SoCs use LPDDR5X-class memory like the H58G66CK8BX147 for camera-path buffering, map rendering, and neural inference. The part's JEDEC-compliant x8/x16 single-channel operation integrates with automotive SoC memory controllers, and its extended low-temperature operation to -25C per the FBGA specification suits cabin and trunk-mounted ECUs. At 8533 Mbps, signal integrity over automotive PCB stackups requires careful reference-plane continuity and per-byte termination tuning; the 0.5V I/O swing also reduces radiated emissions versus LPDDR4X. Note that this mobile-grade part must be verified against the OEM temperature profile - for full automotive qualification, SK hynix automotive-qualified LPDDR5 order codes should be evaluated instead.
Recommandé
Tablets and Portable Computing
Tablet and portable-computer designs select the H58G66CK8BX147 for its balance of 8GB capacity and LPDDR5X-8533 bandwidth in the compact 315-ball FBGA footprint, preserving board area for battery. The three-rail power architecture (1.8V, 1.05V, 0.5V) integrates with standard mobile PMICs that offer dedicated LPDDR5X rails with dynamic voltage scaling, letting firmware trade frequency against voltage for battery life. In multi-month standby scenarios, LPDDR5X self-refresh and deep power-down states hold DRAM content at microamp-class currents per JEDEC LPDDR5 definitions. Layout teams should place the 0.1uF per-ball VDDQ decoupling network inside the package courtyard to meet the impedance target at 8533 Mbps.
Recommandé
Networking and 5G Infrastructure Line Cards
5G small-cell and networking line cards use the H58G66CK8BX147 as deep-packet buffer and control-plane memory, where its 8GB density and 8533 Mbps burst rate absorb bursty upstream traffic without external DRAM expansion. The x8 organization with 2CS enables two-rank buffering that improves effective bandwidth utilization under random access patterns typical of packet processing. Unlike DDR5 DIMMs, the LPDDR5X interface is point-to-point soldered memory, improving reliability in fanless outdoor enclosures. Thermal design should account for sustained buffer traffic: the FBGA package dissipates heat through the ball array, so engineers should verify junction temperature with the airflow conditions of the enclosure and derate refresh rates per JEDEC LPDDR5 temperature-compensated refresh rules.
Recommandé
Test and Measurement Instrumentation
High-speed oscilloscope and logic-analyzer acquisition systems employ the H58G66CK8BX147 as capture memory, streaming digitizer samples into its 8GB buffer at LPDDR5X-8533 aggregate rates. The part's deterministic JEDEC LPDDR5 command set supports the sustained sequential write streams that deep-memory record lengths require, and the 2CS dual-rank configuration allows interleaved writes that mask refresh pauses. Because instruments operate on bench power with regulated 1.8V/1.05V/0.5V rails, the power-tree design is simpler than battery products. Calibration firmware should characterize timing across the full -25C to upper operating range specified in the FBGA document, and SI sign-off should capture eye diagrams at each speed bin supported by the controller.
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Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H58G66CK8BX147 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H58G66CK8BX147N | H58G66CK8BX147R | H58G66CK8BX147V |
|---|---|---|---|---|
| Package | 315-ball FBGA (lead & halogen free) | 315-ball FBGA - same | 315-ball FBGA - same | 315-ball FBGA - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 8GB (2CH 2CS) | 8GB (2CH 2CS) | 8GB (2CH 2CS) | 8GB (2CH 2CS) |
| Organization | 1Gx8 | 1Gx8 | 1Gx8 | 1Gx8 |
| Supply Voltages | 1.8 V / 1.05 V / 0.5 V | 1.8 V / 1.05 V / 0.5 V | 1.8 V / 1.05 V / 0.5 V | 1.8 V / 1.05 V / 0.5 V |
Principaux différenciateurs
- LPDDR5X-8533 speed grade exceeds LPDDR5 baseline (vs H58G56AK6QX032 (LPDDR4X-class family))
- Lead-free and halogen-free 315-ball FBGA (vs H58G66CK8BX147R)
- Honest trade-off: mobile-grade, not automotive-qualified (vs SK hynix automotive LPDDR5 order codes)
Notes de conception
At LPDDR5X-8533, per-pin data rates of 8533 Mbps leave limited timing margin. Keep CPU-to-DRAM trace lengths matched within the controller spec (typically a few mils per byte lane), maintain continuous reference planes under all address/command and DQ groups, and avoid via stubs on DQ lines. Run IBIS-based SI simulation with the SK hynix LPDDR5 IBIS model at both 0.5V VDDQ corners before sign-off, and verify write leveling and read training converge on first silicon.
The H58G66CK8BX147 requires three regulated domains: 1.8V (VDD1), 1.05V (VDD2), and 0.5V (VDDQ). Use a PMIC with dedicated LPDDR5X rails supporting dynamic voltage scaling; the 0.5V VDDQ rail typically carries the highest transient currents during burst writes, so place bulk capacitance plus per-ball 0.1uF ceramics within the package courtyard. Estimated: a 1Gx8 device bursting at 8533 Mbps can draw ampere-class VDDQ transients - confirm against the official datasheet IDD tables for your speed bin.
Do not assume suffix-letter variants are interchangeable without checking the SK hynix ordering-information table: 147, 147N, and 147R encode order-code, revision, and grade differences that affect temperature grade and possibly speed bin. Also, LPDDR5X ball maps are not standardized across vendors - a Micron or Samsung 8Gb LPDDR5X in a 200-ball package will NOT drop onto this 315-ball footprint. Qualify only suffix variants of the same SK hynix family for footprint-compatible substitution.
Informations de conformité
Package specified as 315-ball FBGA (Lead & Halogen Free) per the manufacturer FBGA specification document. REACH and conflict-minerals status not stated in provided data.
