IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon
Référence : IAUC100N10S5L054ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.74 | $3,74 |
| 10 | $3.36 | $33,60 |
| 100 | $2.78 | $278,00 |
| 500 | $2.31 | $1 155,00 |
| 1 000 | $1.92 | $1 920,00 |
IAUC100N10S5L054ATMA1 Présentation
An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled three-terminal switching device that uses a positive gate-to-source voltage to create an n-type conduction channel between drain and source. Power MOSFETs like the IAUC100N10S5L054ATMA1 sit within the broader hierarchy of discrete semiconductors → transistors → FETs → MOSFETs, and are the workhorse switches in synchronous buck converters, BLDC motor drives, hot-swap controllers, and high-current load switches where fast switching, low conduction loss, and small footprint are required.
Key differentiating features include the 5.4 mΩ max R_DS(on) at 10 V V_GS, an optimized gate charge (Qg) profile for reduced switching losses, and the rugged PG-TDSON-8-34 footprint that combines a small 5x6 mm outline with a thermally efficient drain tab. Compared to older trench MOSFET generations, the OptiMOS 5 process delivers lower FOM (R_DS(on) × Qg) and improved avalanche ruggedness, enabling higher power density designs at 100V bus voltages.
The architecture uses Infineon's advanced trench-cell structure with a low-resistance substrate connection, achieving both low R_DS(on) per unit area and excellent dv/dt immunity. The PG-TDSON-8-34 package supports a solderable drain pad on the underside that doubles as a thermal via interface to inner PCB copper planes, enabling the 130 W Tc dissipation rating when properly mounted.
Typical applications span automotive LED lighting drivers (front-light LED front-ends, daytime running lights), 12V/48V motor control for pumps and fans, battery management systems, and DC-DC converter high-side switches. AEC-Q101 qualification and the wide -55°C to +175°C operating range make it well suited to under-hood and chassis electronics where ambient temperatures are uncontrolled.
When designing with this part, pay attention to the layout of the source-sense (Kelvin) connection if available, the gate-drive voltage headroom, and the PCB copper area beneath the drain pad — these directly impact achievable R_DS(on) and junction temperature in real operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet.
Alternatives de remplacement direct pour IAUC100N10S5L054ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUC100N10S5L054ATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, MSL Level, Operating Temperature Range, Series.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUS300N10S5N014ATMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IAUC60N10S5L110ATMA1
✅ Remplacement direct✓ En stock
$0.66 / unité
Voir la fiche technique →IAUCN08S7L033ATMA1
✅ Remplacement direct✓ En stock
$0.86 / unité
Voir la fiche technique →IAUCN10S5L110TATMA1
✅ Remplacement direct✓ En stock
$2.08 / unité
Voir la fiche technique →IAUCN10S5L280DATMA1
✅ Remplacement direct✓ En stock
$1.62 / unité
Voir la fiche technique →IAUC120N06S5L015ATMA1
✅ Remplacement direct✓ En stock
$0.92 / unité
Voir la fiche technique →ISC037N12NM6ATMA1
✅ Remplacement direct✓ En stock
$3.62 / unité
Voir la fiche technique →IAUC100N10S5L054ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 (IAUC automotive family) |
| Type de transistor | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | 100 V |
| Continuous Drain Current (I_D, Tj) | 101 A |
| Power Dissipation (P_D, Tc) | 130 W |
| R_DS(on) max at V_GS=10V | 5.4 mΩ |
| Plage de température de fonctionnement | -55°C to +175°C |
| Boîtier | PG-TDSON-8-34 (surface mount) |
| Type de montage | Surface Mount |
| Qualification | AEC-Q101 (automotive) |
| Technology | OptiMOS 5 trench |
| Statut RoHS | Compliant |
Configuration des broches de IAUC100N10S5L054ATMA1
| Broche 1 | GATE — Gate control input |
| Broche 2 | SOURCE — Source connection |
| Broche 3 | SOURCE — Source connection |
| Broche 4 | NC — Not connected (per datasheet) |
| Broche 5 | SOURCE — Source connection (Kelvin sense) |
| Broche 6 | SOURCE — Source connection |
| Broche 7 | DRAIN — Drain tab on underside of package |
| Broche 8 | DRAIN — Drain tab on underside of package |
Applications typiques
IAUC100N10S5L054ATMA1 convient pour 6 applications: Automotive LED Lighting Front-End, 48V Mild-Hybrid DC-DC Converter, BLDC Motor Drive for Pumps and Fans, Battery Management High-Side Switch, Industrial 24V/48V Brushless DC Motor Drive, Hot-Swap / In-Rush Current Limiter.
Automotive LED Lighting Front-End
The IAUC100N10S5L054ATMA1's 5.4 mΩ R_DS(on) and 100V V_DS rating make it a strong high-side or low-side switch for automotive LED headlight front-end drivers, including matrix-LED and daytime-running-light boost-converter topologies. With AEC-Q101 qualification and 175°C junction temperature capability, the part tolerates under-hood thermal stress while its low conduction loss keeps driver-stage efficiency above 95% even at 5-10A continuous LED current. Compared to a relay solution, the MOSFET provides PWM dimming down to sub-1kHz without audible flicker. The PG-TDSON-8-34 package's exposed drain tab allows direct heat-sinking into the headlight housing's aluminum substrate.
Recommandé
48V Mild-Hybrid DC-DC Converter
In 48V mild-hybrid automotive power systems, the IAUC100N10S5L054ATMA1 can be used as the high-side or low-side synchronous MOSFET in 48V-to-12V buck converters delivering 1-3 kW peak power. The 100V rating provides comfortable headroom above the 48V nominal bus and its load-dump transients, while the 5.4 mΩ R_DS(on) keeps full-load efficiency in the 96-98% range that mild-hybrid efficiency targets demand. The Infineon OptiMOS 5 process also provides fast body-diode reverse recovery, which simplifies synchronous-rectifier dead-time management in bidirectional converter topologies. AEC-Q101 qualification supports safety-critical powernet applications.
Recommandé
BLDC Motor Drive for Pumps and Fans
The IAUC100N10S5L054ATMA1 suits the three-phase inverter stage of automotive BLDC motor drives used in water pumps, oil pumps, and cooling fans. Each phase leg sees PWM switching at 20-50 kHz with peak currents of 30-60A, well within the part's 101A continuous rating. The 5.4 mΩ R_DS(on) reduces I²R losses in the inverter, directly extending battery range in electric vehicles, while the 100V rating provides margin for 12V/24V bus spikes and back-EMF. The PG-TDSON-8-34 exposed-pad package mounts directly to a thermal copper pour, supporting continuous inverter operation at high torque.
Recommandé
Battery Management High-Side Switch
In automotive battery management systems (BMS) and e-fuse applications, the IAUC100N10S5L054ATMA1 functions as a high-side disconnect switch between the battery pack and the load bus. The low 5.4 mΩ R_DS(on) reduces steady-state conduction loss to under 0.5W at 10A continuous current, while the 100V V_DS rating tolerates inductive transients during disconnect events. The Infineon OptiMOS 5 technology provides robust avalanche ruggedness and -55°C to +175°C operating range, supporting BMS-mounted applications under harsh automotive thermal-cycling conditions. The PG-TDSON-8-34 footprint enables compact BMS PCB layouts where every square millimeter matters.
Recommandé
Industrial 24V/48V Brushless DC Motor Drive
Beyond automotive, the IAUC100N10S5L054ATMA1 serves industrial 24V and 48V BLDC motor drives for factory automation, robotics, and servo systems. The 100V rating covers both bus classes with margin, and the 101A continuous current supports motors in the 1-3 kW power range commonly found in industrial conveyors and robotic actuators. The wide -55°C to +175°C operating range is well-matched to industrial cabinet environments where ambient temperatures can reach 70°C with limited airflow. The AEC-Q101 qualification is over-spec for industrial but provides additional reliability margin that reduces field-failure rates.
Recommandé
Hot-Swap / In-Rush Current Limiter
The IAUC100N10S5L054ATMA1 is well suited to 48V telecom and server hot-swap controllers, where it acts as the in-rush current limiter during board insertion into a live backplane. Its 5.4 mΩ R_DS(on) minimizes steady-state voltage drop and power dissipation after the board is fully inserted, while the 100V rating covers the full 48V telecom bus plus transient headroom. The OptiMOS 5 silicon's controlled dv/dt and SOA characteristics let the part absorb the brief high-current surge during capacitor charging without requiring additional protection circuitry, simplifying the hot-swap controller design.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUC100N10S5L054ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUS300N10S5N014ATMA1 | IAUC60N10S5L110ATMA1 | IAUCN08S7L033ATMA1 | IAUCN10S5L110TATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-34 | PG-TDSON-8 family | PG-TDSON-8 family | PG-TDSON-8 family | PG-TDSON-8 family | PG-TDSON-8 family |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| V_DS max (V) | 100 | 100 | 100 | 80 | 100 | 120 |
| R_DS(on) max (mΩ) @ V_GS=10V | 5.4 | 1.4 | 11 | 3.3 | 11 | 3.7 |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 | OptiMOS 6 |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature Range | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C |
Principaux différenciateurs
- Lowest R_DS(on) in the IAUC 100V automotive family at 5.4 mΩ max (vs IAUC60N10S5L110ATMA1)
- 100V V_DS rating with AEC-Q101 qualification in compact PG-TDSON-8-34 (vs IAUCN08S7L033ATMA1)
- AEC-Q101 qualification with 175°C junction temperature rating (vs IAUS300N10S5N014ATMA1)
Notes de conception
Estimated: at full 101A continuous drain current and 100V V_DS in the PG-TDSON-8-34 package, thermal management is critical. Calculate worst-case conduction loss as P_cond = I² × R_DS(on)(at T_j,operating). At T_j=125°C, R_DS(on) approximately doubles versus 25°C, raising the multiplier to ~10.8 mΩ and conduction loss to ~110W, which exceeds the 130W Tc rating. Reduce operating current to 50-60A continuous, or improve PCB copper heatsinking (≥6 cm² of 2 oz copper on drain tab) to stay within SOA. A heatsink fan combo is recommended for >80A continuous applications.
The PG-TDSON-8-34 package requires a substantial thermal copper pad on the underside of the PCB directly beneath the drain tab. Use at least 6 cm² of 2 oz copper (or equivalent inner-plane layers stitched with thermal vias) to achieve the rated 130W Tc power dissipation. Place a 0.1µF ceramic bypass capacitor between gate and source as close to the package pins as possible (within 5mm) to suppress gate-bounce and limit dv/dt-induced turn-on. Source-sense pin (pin 5) should be Kelvin-connected to the gate-driver ground return, not directly to the power source PCB trace.
Minimize the source-inductance loop between the MOSFET source pins, the gate-driver ground return, and the gate resistor. A high source inductance creates a voltage spike during turn-off that subtracts from V_GS and may falsely turn the MOSFET on or cause dv/dt-induced shoot-through in half-bridge configurations. Use a 4-layer PCB with a dedicated ground plane under the gate-drive loop; keep gate-drive traces short (<10mm) and use a 10Ω gate resistor to control ringing without slowing switching excessively.
Do not exceed V_GS(max) of ±20V (refer to datasheet for exact rating); standard gate-drive ICs use 10V V_GS which is safe. Always include a gate-source pull-down resistor (10kΩ-100kΩ) to ensure the MOSFET stays off when the gate-driver is in high-Z state during MCU reset. In parallel-MOSFET configurations for higher current, gate-source resistors prevent parasitic oscillation between paralleled devices and help balance dynamic current sharing.
Informations de conformité
AEC-Q101 qualified (automotive-grade stress-test standard for discrete semiconductors). RoHS and REACH compliant per Infineon product page. Lead-free surface-mount packaging per JEDEC J-STD-020 reflow profile. Note: AEC-Q101 is the standard for discrete semiconductors; AEC-Q100 is the equivalent standard for ICs - this part is qualified to AEC-Q101.
