IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon
Référence : IAUCN04S7L028ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.45 | $1,45 |
| 10 | $1.28 | $12,80 |
| 100 | $1.05 | $105,00 |
| 500 | $0.95 | $475,00 |
| 1 000 | $0.88 | $880,00 |
IAUCN04S7L028ATMA1 Présentation
A power MOSFET is a voltage-controlled switch used to convert and manage electrical energy with high efficiency. Within the broader semiconductor taxonomy, this device sits at: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. The OptiMOS 7 generation specifically targets synchronous rectification, motor control, and high-current automotive DC-DC conversion where conduction loss dominates. N-channel MOSFETs such as this one conduct when VGS exceeds the gate threshold (typically 1.8 V here), allowing low-side or high-side drive via a gate driver IC.
Differentiating features include 58 W power dissipation (Ptot) at 25 C, a junction operating range of -55 C to +175 C (AEC-Q101 automotive grade), input capacitance (Ciss) of 1.578 nF, output capacitance (Coss) of 788 pF, and total gate charge (Qg) of 24 nC at VGS=10 V. The combination of low Qg and ultra-low RDS(on) yields an excellent figure-of-merit (FOM = RDS(on) x Qg) for high-frequency switching. PG-TDSON-8-33 package provides a low thermal resistance path via the exposed drain pad.
The OptiMOS 7 architecture uses an advanced split-gate trench process that minimizes Miller charge while shrinking cell pitch, directly reducing both switching loss and conduction loss. Compared to previous OptiMOS 5 generations in the same package, RDS(on) is reduced by approximately 30 percent and Qg by 20 percent, allowing either cooler operation at the same load or higher load capability at the same temperature rise.
Typical applications include BLDC motor drives (e.g., automotive EPS, e-bike, e-scooter, power tools), automotive 12 V/24 V synchronous rectification in DC-DC converters and ORing circuits, battery management system (BMS) protection, and high-current load switches in 12 V automotive power distribution. The AEC-Q101 qualification makes it suitable for under-hood and chassis-mounted ECUs.
When designing with this MOSFET, ensure the gate driver can source/sink sufficient peak current (typically 1-2 A) to charge Qg quickly, keep the gate-loop PCB inductance below 5 nH to suppress VGS ringing, and provide adequate heatsinking through multiple thermal vias under the exposed pad. Avoid exceeding VGS(th) margin at cold temperatures where threshold rises sharply.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical thermal/layout guidance not consolidated in the manufacturer datasheet. All specifications below are extracted from the Infineon IAUCN04S7L028 datasheet and current distributor listings.
Alternatives de remplacement direct pour IAUCN04S7L028ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUCN04S7L028ATMA1 (même facteur de forme et même empreinte) — différant par Package, Mounting Type, Automotive Qualification, Operating Junction Temperature, Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUCN04S7L042GATMA1
✅ Remplacement direct✓ En stock
$0.86 / unité
Voir la fiche technique →IAUCN04S7N037GATMA1
✅ Remplacement direct✓ En stock
$0.89 / unité
Voir la fiche technique →IAUCN04S7N015GATMA1
✅ Remplacement direct✓ En stock
$2.21 / unité
Voir la fiche technique →IAUCN04S7L050HATMA1
✅ Remplacement direct✓ En stock
$0.83 / unité
Voir la fiche technique →IAUCN04S7N027GATMA1
✅ Remplacement direct✓ En stock
$0.72 / unité
Voir la fiche technique →IAUCN04S7L028ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| Type de transistor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 100 A |
| On-State Resistance (RDS(on)) max | 2.80 mOhm at VGS=10 V |
| On-State Resistance (RDS(on)) | 2.82 mOhm at VGS=10 V (JLCPCB reported) |
| Gate-Source Threshold (VGS(th)) | 1.8 V (typ) |
| Gate Charge (Qg) | 24 nC at VGS=10 V |
| Input Capacitance (Ciss) | 1.578 nF |
| Output Capacitance (Coss) | 788 pF |
| Reverse Transfer Capacitance (Crss) | 36 pF |
| Dissipation de puissance (Ptot) | 58 W |
| Température de jonction en fonctionnement | -55 C to +175 C |
| Boîtier | PG-TDSON-8-33 (TDSON-8 EP) |
| Type de montage | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Statut RoHS | Compliant |
Configuration des broches de IAUCN04S7L028ATMA1
| Broche 1 | Source — Source connection (connected to exposed pad) |
| Broche 2 | Source — Source connection (connected to exposed pad) |
| Broche 3 | Source — Source connection (connected to exposed pad) |
| Broche 4 | Gate — Gate drive input |
| Broche 5 | Drain — Drain connection (also exposed pad) |
| Broche 6 | Source — Source connection (connected to exposed pad) |
| Broche 7 | Source — Source connection (connected to exposed pad) |
| Broche 8 | Source — Source connection (connected to exposed pad) |
Zone de fonctionnement sûr - IAUCN04S7L028
Applications typiques
IAUCN04S7L028ATMA1 convient pour 6 applications: Automotive BLDC Motor Drive (EPS, e-Bike, Power Tools), 12V/24V Automotive Synchronous Rectification, Battery Management System (BMS) Protection Switch, High-Current Automotive Load Switch / ECU Power Distribution, Industrial 24V Brushless DC Drive, USB-PD / High-Current USB Power Delivery Sink Switch.
Automotive BLDC Motor Drive (EPS, e-Bike, Power Tools)
The IAUCN04S7L028ATMA1's 2.80 mOhm RDS(on) at VGS=10 V and 100 A continuous drain current make it ideal for three-phase BLDC motor inverters in automotive electric power steering (EPS), e-bike/e-scooter controllers, and 18-36 V power-tool drives. The OptiMOS 7 generation reduces switching loss by approximately 20 percent versus OptiMOS 5, allowing higher PWM frequencies (>50 kHz) for quieter motor operation. Placed as low-side switch per phase in a three-phase full-bridge, it dissipates roughly P = ID^2 x RDS(on) x duty-cycle; at 50 A peak and 50 percent duty, conduction loss is ~3.5 W per FET. AEC-Q101 qualification handles under-hood thermal cycling.
Recommandé
12V/24V Automotive Synchronous Rectification
In 12 V or 24 V automotive buck and boost converters, the IAUCN04S7L028ATMA1 serves as the synchronous rectifier (low-side FET) replacing a Schottky diode to gain 3-5 percent system efficiency. The 24 nC total gate charge and 788 pF Coss enable 200-500 kHz switching with manageable dead-time loss. At 30 A output with 24 V input to 12 V conversion, conduction loss in the SR FET is approximately 2.5 W using this 2.80 mOhm part, keeping the junction below 100 C with modest copper cooling. The 40 V VDS rating provides ample margin for automotive load-dump transients up to 35 V.
Recommandé
Battery Management System (BMS) Protection Switch
The IAUCN04S7L028ATMA1 is well suited as the high-side disconnect FET in 12 V/48 V automotive BMS modules where it must carry full pack current during normal operation and interrupt fault currents within microseconds. Its 100 A continuous rating comfortably exceeds 48 V mild-hybrid pack currents, while the 2.80 mOhm RDS(on) keeps steady-state loss under 1 W at 20 A discharge. The AEC-Q101 grade ensures long-term reliability across -40 C to +125 C ambient. Use it paired with a dedicated BMS AFE such as the TLE9012DQU for cell balancing and isolation control.
Recommandé
High-Current Automotive Load Switch / ECU Power Distribution
For zonal ECU architectures and 12 V power distribution modules, the IAUCN04S7L028ATMA1 provides a robust solid-state switch for high-current loads (headlamps, PTC heaters, fan motors). Driven by an SPI-controlled gate driver or smart switch IC, it offers low RON and full protection via the system MCU. The exposed-drain TDSON-8-33 package enables efficient PCB cooling across a wide copper area, keeping Tj below 150 C even at 50 A continuous. Pair with BTS71033 for protected high-side switching where diagnostic feedback is required.
Recommandé
Industrial 24V Brushless DC Drive
Industrial 24 V BLDC drives for conveyor motors, AGVs, and small-format pumps benefit from the IAUCN04S7L028ATMA1's combination of 40 V rating and 100 A capability. The 2.80 mOhm RDS(on) reduces I^2R heating, allowing compact PCB integration without forced air cooling. The OptiMOS 7 process provides fast body-diode recovery, supporting sensorless FOC algorithms at 25 kHz PWM. The exposed drain pad mates directly with thermal vias on a 4-layer FR-4 board, achieving theta_JA around 50 C/W for steady-state 30 A operation.
Recommandé
USB-PD / High-Current USB Power Delivery Sink Switch
In automotive USB-PD ports rated 100 W (20 V / 5 A), the IAUCN04S7L028ATMA1 functions as a VBUS protection switch and load-disconnect FET. Its 40 V VDS handles USB-PD Programmable Power Supply voltages up to 28 V with margin, while the 2.80 mOhm RDS(on) keeps voltage drop under 150 mV at 5 A - critical for meeting USB-PD voltage tolerance at the device port. AEC-Q101 qualification and -55 C to +175 C range support automotive cabin thermal environments. Pair with the EZ-PD PMG1 MCU for USB-PD protocol and port control.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUCN04S7L028ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUCN04S7L042GATMA1 | IAUCN04S7N037GATMA1 | IAUCN04S7N015GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-33 | PG-TDSON-8-33 | PG-TDSON-8-33 | PG-TDSON-8-33 | PG-TDSON-8-33 | PG-TDSON-8-33 |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID) | 100 A | 100 A | 100 A | 100 A | 100 A | 100 A |
| On-State Resistance (RDS(on)) | 2.80 mOhm at VGS=10V | 4.2 mOhm at VGS=10V | 3.7 mOhm at VGS=10V | 1.5 mOhm at VGS=10V | 5.0 mOhm at VGS=10V | 2.7 mOhm at VGS=10V |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
Principaux différenciateurs
- Lowest RDS(on) at 40V in TDSON-8 EP automotive grade (vs IAUCN04S7L042GATMA1)
- Lower RDS(on) than N037 variant in same package (vs IAUCN04S7N037GATMA1)
- Higher Qg but better thermal conductivity than N015 variant (vs IAUCN04S7N015GATMA1)
Notes de conception
Estimated: at 100 A continuous drain current with the 2.80 mOhm RDS(on) at Tj=175 C, conduction loss is approximately P = I^2 x R = 100^2 x 0.0028 = 28 W. The TDSON-8 EP package with a 1 square inch copper pour on a 4-layer FR-4 board achieves theta_JA around 40-50 C/W. At 25 C ambient this yields Tj ~ 75 C; at 85 C ambient (under-hood) Tj reaches ~135 C, leaving margin for switching loss. Use 2 oz copper on top and bottom layers with a 4x4 thermal via array (0.3 mm vias, 1 mm pitch) under the exposed pad.
Keep the high-current source-loop (drain-source-switching node) as small as possible - aim for less than 10 nH total parasitic inductance to limit VDS overshoot during turn-off. Place input capacitors (10-22 uF X7R) within 5 mm of the drain pad. For the gate-drive loop, route the gate return trace directly to the source pin (pin 1-3 or 6-8) rather than to the power ground plane to avoid ground bounce coupling into VGS. A 10 Ohm gate-source resistor close to the FET prevents parasitic turn-on from Miller injection.
Do not exceed VGS rating of +/-20 V absolute maximum - even brief transients from a poorly-tuned gate driver can exceed this. The 1.8 V typical VGS(th) means cold-start at -40 C with a 5 V gate drive will have very high RDS(on) (cold threshold can rise to ~3 V). Use a 10-12 V gate drive for full enhancement. Verify that the body diode reverse recovery (Qrr) is acceptable for your topology - synchronous rectification applications should check this carefully, and consider an external Schottky if Qrr losses dominate.
Informations de conformité
RoHS compliant per distributor listings. AEC-Q101 qualified (automotive grade) - this is the correct automotive MOSFET qualification standard, distinct from AEC-Q100 used for ICs. Halogen-free per Infineon OptiMOS 7 family datasheet.
