IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon
Référence : IPL60R115CFD7AUMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.2 | $220,00 |
| 500 | $1.92 | $960,00 |
| 1 000 | $1.65 | $1 650,00 |
IPL60R115CFD7AUMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that turns on and off rapidly to regulate energy flow between a source and a load. Superjunction MOSFETs such as the CoolMOS family occupy the middle tier of the power-semiconductor hierarchy: MOSFET -> power MOSFET -> superjunction MOSFET -> high-voltage MOSFET -> discrete semiconductor. They balance conduction loss, switching loss, and ruggedness better than planar MOSFETs at 500V-950V blocking voltages.
Key features include 115mOhm maximum on-resistance (RDS(on)) at VGS=10V, 600V drain-source breakdown voltage, integrated fast body diode for reduced Qrr, low gate charge for fast switching transitions, and dv/dt ruggedness for hard-switched environments. The PG-VSON-4 (5x6mm) package provides an exposed pad that reduces thermal resistance, allowing the device to handle elevated dissipation in compact form factors.
The CoolMOS CFD7 cell architecture uses an optimized superjunction geometry to minimize the figure-of-merit RDS(on)*Qg, achieving both low conduction loss and low switching loss. The fast body diode eliminates the need for external anti-parallel diodes in half-bridge and full-bridge configurations, reducing BOM count and improving efficiency in resonant converters.
Typical applications include server and telecom switched-mode power supplies (SMPS), solar inverters, EV on-board chargers, industrial welding equipment, and induction heating. The 600V rating and integrated diode make it particularly suitable for resonant LLC converters and PFC boost stages in 380V/400V DC-link systems.
When designing with this device, verify SOA at the operating point and size the gate-drive circuit to deliver sufficient peak current to charge and discharge the input capacitance quickly. Layout should minimize source-loop and gate-loop inductance to avoid ringing and dv/dt-induced false turn-on.
This page synthesizes distributor pricing, drop-in alternatives, and design considerations beyond the manufacturer datasheet, giving engineers a single reference for selecting and applying the IPL60R115CFD7AUMA1.
Alternatives de remplacement direct pour IPL60R115CFD7AUMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IPL60R115CFD7AUMA1 (même facteur de forme et même empreinte) — différant par Technology, Package, Operating Temperature Range, Series, Mounting Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IPL60R125CFD7
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPL60R099CFD7
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPL60R105P7AUMA1
✅ Remplacement direct✓ En stock
$0.82 / unité
Voir la fiche technique →IPB60R040CFD7ATMA1
✅ Remplacement direct✓ En stock
$5.19 / unité
Voir la fiche technique →IPW60R037P7XKSA1
✅ Remplacement direct✓ En stock
$3.55 / unité
Voir la fiche technique →IPD65R380E6ATMA1
✅ Remplacement direct✓ En stock
$0.65 / unité
Voir la fiche technique →IAUC120N06S5L015ATMA1
✅ Remplacement direct✓ En stock
$0.92 / unité
Voir la fiche technique →IPL60R115CFD7AUMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Part Number | IPL60R115CFD7AUMA1 |
| Series | CoolMOS CFD7 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc) | 22 A |
| On-Resistance (RDS(on)) | 115 mOhm (typ, VGS=10V) |
| Boîtier / Format | PG-VSON-4 (5x6 mm) with exposed pad |
| Type de montage | Surface Mount |
| Technology | Superjunction MOSFET (CoolMOS CFD7) |
| Integrated Body Diode | Yes - fast body diode (CFD) |
| Application | Resonant high-power topologies (LLC, PFC) |
| Statut RoHS | Compliant (per distributor listings) |
| Nombre de broches | 4 |
Configuration des broches de IPL60R115CFD7AUMA1
| Broche 1 | Gate — Gate drive input - apply VGS=10V for full turn-on |
| Broche 2 | Drain — Drain terminal - high-voltage switching node |
| Broche 3 | Source — Source terminal - return path for gate drive and load current |
| Broche 4 | Thermal Pad — Exposed pad on bottom for heatsinking; electrically connected to Source |
Zone de fonctionnement sûr (estimated; refer to manufacturer datasheet)
Applications typiques
IPL60R115CFD7AUMA1 convient pour 6 applications: LLC Resonant Converter Primary Switch, Server and Telecom SMPS, Solar Inverter PFC Stage, EV On-Board Charger (OBC), Industrial Welding and Induction Heating, Telecom Rectifier and DC-DC Front-End.
LLC Resonant Converter Primary Switch
The IPL60R115CFD7AUMA1 is specifically designed by Infineon for LLC resonant converter primary-side switching in high-power SMPS. The integrated fast body diode (CFD designation) significantly reduces dead-time losses and reverse-recovery charges (Qrr) during half-cycle commutation - critical when operating at 100-500 kHz switching frequency. With 600V VDS rating and 115mOhm RDS(on), the part handles typical 380V/400V DC-link rails in server and telecom 1-3 kW PSU designs. The PG-VSON-4 exposed pad reduces junction-to-case thermal resistance, allowing sustained 22A operation when properly heatsinked to the PCB copper pour.
Recommandé
Server and Telecom SMPS
High-density server and telecom power supplies require MOSFETs that combine low conduction loss with excellent switching performance. The IPL60R115CFD7AUMA1 delivers 115mOhm RDS(on) and the fast body diode needed for 80 PLUS Titanium and Titanium-class efficiency targets in 2400W-3000W CRPS form factors. The 600V breakdown provides adequate margin above rectified 230V AC rails. Compared to planar MOSFETs at similar RDS(on), the CoolMOS CFD7 superjunction technology reduces switching losses by 30-50% in the primary PFC and LLC stages, directly reducing heatsink size and improving power density.
Recommandé
Solar Inverter PFC Stage
The IPL60R115CFD7AUMA1 fits well in solar inverter PFC (Power Factor Correction) boost stages operating from single-phase 230V AC or three-phase 400V AC grids. The 600V VDS rating handles rectified 230V AC peaks with 1.4x safety margin; the 115mOhm RDS(on) keeps conduction loss low in continuous-conduction-mode (CCM) PFC. The fast body diode is not strictly required in PFC (unlike resonant), but the CFD7 technology still offers lower Qrr than legacy parts, reducing reverse-recovery spikes and EMI. Suitable for residential single-string inverters in the 3-10 kW range.
Recommandé
EV On-Board Charger (OBC)
The IPL60R115CFD7AUMA1 is suitable for use in EV on-board charger PFC and DCDC primary stages where 400V/800V traction battery voltages are involved. With 22A continuous current rating and 600V VDS, the part handles 3.3 kW-7 kW OBC modules at typical 100 kHz-300 kHz switching frequencies. The fast body diode reduces dead-time losses in totem-pole bridgeless PFC topologies, where synchronous rectification on the AC side replaces the input rectifier bridge - a topology that demands excellent reverse-recovery performance from the MOSFET intrinsic diode.
Recommandé
Industrial Welding and Induction Heating
Industrial welding machines and induction heating power stages benefit from the IPL60R115CFD7AUMA1's 600V rating and rugged CoolMOS CFD7 cell design that withstands hard-switching dv/dt stress. The 22A continuous rating covers 10-15 kW induction heating converters at line-frequency rectified 230V/400V DC-link rails. The integrated fast body diode eliminates the need for external anti-parallel diodes in half-bridge resonant tank topologies (such as the ZVS class-E or class-D inverters common in induction cooktops and induction forging equipment).
Recommandé
Telecom Rectifier and DC-DC Front-End
Telecom 48V rectifier front-ends operating from -48V battery plants with boost-PFC and isolated DC-DC stages can use the IPL60R115CFD7AUMA1 on the high-voltage primary side. While the 600V VDS rating is more than required for these lower-voltage designs, the part can serve as an upgrade path from lower-voltage MOSFETs in bidirectional EV-to-grid applications. The fast body diode supports full-bridge or push-pull topologies in isolated bus converters feeding downstream 48V-12V POL stages in telecom racks.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IPL60R115CFD7AUMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IPL60R125CFD7 | IPL60R099CFD7 | IPL60R105P7AUMA1 | IPB60R040CFD7ATMA1 | IPW60R037P7XKSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VSON-4 (5x6 mm) | PG-VSON-4 (same) | PG-VSON-4 (same) | PG-VSON-4 (same) | PG-TDSON-8 (different) | TO-247 (different) |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID at Tc) | 22 A | 20 A | 25 A | 23 A | 50 A | 76 A |
| On-Resistance (RDS(on), typ) | 115 mOhm | 125 mOhm | 99 mOhm | 105 mOhm | 40 mOhm | 37 mOhm |
| Integrated Fast Body Diode (CFD) | Yes | Yes | Yes | No (P7 series) | Yes | No (P7 series) |
| Series | CoolMOS CFD7 | CoolMOS CFD7 | CoolMOS CFD7 | CoolMOS P7 | CoolMOS CFD7 | CoolMOS P7 |
| Pin-to-Pin Compatible | Reference | Yes (same package) | Yes (same package) | Yes (same package, no fast diode) | No (TDSON-8 vs VSON-4) | No (TO-247 vs VSON-4) |
| Target Topology | Resonant (LLC, PFC) | Resonant (LLC, PFC) | Resonant (LLC, PFC) | Hard-switched PFC and LLC | Resonant high-power | Hard-switched PFC, high-power |
Principaux différenciateurs
- Integrated fast body diode eliminates anti-parallel diode requirement (vs IPL60R105P7AUMA1 (CoolMOS P7))
- Lower conduction loss than higher-RDS(on) CFD7 family members (vs IPL60R125CFD7 (125mOhm RDS(on)))
- Smaller footprint than TO-247 alternatives at similar power (vs IPW60R037P7XKSA1 (TO-247))
- 600V rating covers universal AC input (vs 650V-rated CoolMOS E6 (IPD65R380E6ATMA1))
Notes de conception
The PG-VSON-4 exposed pad must be soldered to a minimum 1 square inch of continuous copper pour on the top and bottom PCB layers to keep junction temperature below 150C at rated current. Without sufficient copper, thermal resistance rises sharply. Estimated: at 22A continuous with 600V/400V operation switching at 100 kHz, total power dissipation is approximately 5-8W (conduction + switching). PCB copper area directly determines continuous current capability above the package rating.
Minimize the source-loop and gate-loop inductance by keeping the gate-drive return path (Kelvin source) physically separated from the main source current path. Place the gate resistor and diode (if used) within 5mm of the gate pad. A high dv/dt (e.g., 5 V/ns typical for 600V superjunction) can cause ringing and false turn-on if loop inductance exceeds 20 nH. Use a 4-layer PCB with a dedicated gate-drive return plane under the gate traces for optimal switching performance.
Do not exceed the gate-source voltage rating of +/-20V (typically +/-30V abs max for CoolMOS CFD7). Use a gate-source Zener clamp or gate-drive negative-bias supply to prevent dv/dt-induced turn-on in half-bridge configurations. Verify the SOA at the operating point - resonant applications stay within SOA at turn-on/turn-off transitions, but hard-switched topologies at high VDS and high ID can exceed SOA. Add an RC snubber or use a slower gate resistor if needed.
Maintain at least 0.5 mm clearance between the high-voltage drain pad and adjacent low-voltage traces to meet 600V creepage requirements per IPC-2221 for pollution degree 2. The PG-VSON-4 package has a smaller pad-pitch than DPAK, which reduces clearance - verify the PCB layout against the actual working voltage including transient overshoot. Use conformal coating or potting if the design is exposed to humidity or contamination.
Informations de conformité
RoHS compliant per distributor product listings. Industrial grade - not AEC-Q100 qualified (use IPL60R115CFD7AUMA1's automotive equivalent if needed). REACH/halogen status not explicitly stated in distributor data - refer to Infineon product compliance documentation.
