K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
Référence : K4B4G1646D-BYK00 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $10.32 | $10,32 |
| 10 | $9.5 | $95,00 |
| 100 | $8.75 | $875,00 |
| 500 | $8 | $4 000,00 |
| 1 000 | $7.5 | $7 500,00 |
K4B4G1646D-BYK00 Présentation
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by up to 20% compared to standard 1.5V DDR3. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high data rates up to 1600 Mbps per pin. DDR3L is widely used in mobile devices, laptops, and energy-efficient servers where power efficiency is critical.
Key features include a data rate of 1600 Mbps (PC3-12800), programmable CAS latency, and support for both 1.35V and 1.5V supplies, making it versatile for various system designs. The device also includes auto precharge, asynchronous reset, ZQ calibration, data mask, and dynamic on-chip termination (DTC), enhancing signal integrity and simplifying memory controller design.
Technically, the K4B4G1646D-BYK00 uses Samsung's D-die process technology, offering improved performance and power characteristics. The 96-ball TFBGA package provides a compact footprint with excellent thermal and electrical performance. The device supports a temperature range of 0°C to 85°C, suitable for commercial and industrial applications.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage operation makes it ideal for battery-powered devices and energy-conscious designs.
When designing with this memory, ensure proper decoupling and signal integrity practices, including matched trace lengths and termination resistors, to achieve reliable operation at 1600 Mbps. The dual-voltage capability allows flexible power supply design, but careful attention to VDD and VDDQ levels is required.
Alternatives de remplacement direct pour K4B4G1646D-BYK00 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646D-BYK00 (même facteur de forme et même empreinte) — différant par Package, Data Rate, CAS Latency, Supply Voltage, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646D-BYK0
✅ Remplacement direct✓ En stock
$2.9 / unité
Voir la fiche technique →K4B4G1646D-BCMA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4B4G1646E-BMMA
✅ Remplacement direct✓ En stock
$16.0781 / unité
Voir la fiche technique →K4B4G1646D-BYMA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4B4G1646D-BYK0000
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4A4G085WE-BCRC
⚡ Même boîtier ⚠️ Spécifications non vérifiées✓ En stock
$1.36 / unité
Voir la fiche technique →K4B4G1646D-BYK00 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Débit de données | 1600 Mbps |
| Tension d'alimentation | 1.35 V (also operates at 1.5 V) |
| Boîtier | 96-ball TFBGA |
| Number of Terminals | 96 |
| Température de fonctionnement | 0°C to 85°C |
| Latence CAS | Programmable |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| RoHS | Compliant |
| Lead-Free | Yes |
| Sans halogène | Yes |
| Package Shape | RECTANGULAR |
| Temperature Grade | OTHER |
Configuration des broches de K4B4G1646D-BYK00
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
Applications typiques
K4B4G1646D-BYK00 convient pour 6 applications: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Servers and Data Centers.
Laptop Memory
The K4B4G1646D-BYK00 is ideal for laptop memory modules due to its low 1.35V operation, reducing power consumption and extending battery life. Its 1600 Mbps data rate provides sufficient bandwidth for everyday computing tasks. The 96-ball TFBGA package allows compact module designs, fitting into slim laptop form factors. With 4Gb density, it supports 4GB and 8GB SO-DIMM configurations, meeting the memory demands of modern operating systems and applications.
Recommandé
Embedded Systems
In embedded systems, the K4B4G1646D-BYK00 provides high-density memory for applications like industrial controllers, networking equipment, and single-board computers. Its dual-voltage support (1.35V/1.5V) allows integration into existing 1.5V designs without level shifting. The programmable CAS latency and dynamic on-chip termination simplify timing configuration, while the 0°C to 85°C range suits most industrial environments. The 96FBGA package is suitable for space-constrained PCBs.
Recommandé
Networking Equipment
The K4B4G1646D-BYK00 is well-suited for networking equipment such as routers, switches, and firewalls, where high bandwidth and low power are critical. Its 1600 Mbps data rate supports high-throughput packet processing, and the low 1.35V supply reduces heat generation in dense chassis. The 96FBGA package enables high-density memory arrays on line cards. The device's robust signal integrity features, including ZQ calibration and dynamic on-chip termination, ensure reliable operation in noisy environments.
Recommandé
Industrial PCs
For industrial PCs, the K4B4G1646D-BYK00 offers reliable memory with a 0°C to 85°C operating range, suitable for factory automation and process control. Its low power consumption is beneficial for fanless designs, and the 4Gb density supports demanding applications like HMI and data logging. The dual-voltage capability allows use in legacy 1.5V systems, easing migration to DDR3L. The 96FBGA package provides robust solder joints for vibration-prone environments.
Recommandé
Consumer Electronics
In consumer electronics like smart TVs, set-top boxes, and gaming consoles, the K4B4G1646D-BYK00 delivers the memory bandwidth needed for multimedia processing. Its low voltage operation reduces power consumption, important for energy-efficient devices. The 1600 Mbps data rate supports Full HD video streaming and gaming. The compact 96FBGA package allows slim device designs. The device's auto precharge and data mask features enhance memory efficiency.
Recommandé
Servers and Data Centers
The K4B4G1646D-BYK00 is used in entry-level servers and data center equipment where power efficiency is paramount. Its 1.35V operation reduces energy costs in large-scale deployments. The 4Gb density allows cost-effective memory capacity, and the 1600 Mbps data rate meets the needs of cloud computing and virtualization. The 96FBGA package supports high-density DIMMs. The device's low power and thermal characteristics contribute to overall system reliability.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646D-BYK00 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646D-BYK0 | K4B4G1646D-BCMA | K4B4G1646E-BMMA |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V |
Principaux différenciateurs
- Dual-voltage support (1.35V/1.5V) (vs K4B4G1646D-BYK0)
- D-die process technology (vs K4B4G1646E-BMMA)
- 1600 Mbps data rate (vs K4B4G1646D-BCMA)
Notes de conception
For reliable operation at 1600 Mbps, ensure controlled impedance traces for DQ, DQS, and address/command lines. Use 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 100 mils for data lines and 500 mils for address/command. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise.
The K4B4G1646D-BYK00 supports both 1.35V and 1.5V supplies. When using 1.35V, ensure the power supply can provide sufficient current for the memory's peak current demands. Use a dedicated voltage regulator for VDD and VDDQ to avoid noise coupling. Monitor power sequencing: VDD and VDDQ should ramp up together, and VTT should follow after VDDQ is stable.
The 96-ball TFBGA package has a thermal resistance that depends on PCB layout. For high-density applications, ensure adequate thermal vias under the package to dissipate heat. The operating temperature range is 0°C to 85°C; keep the junction temperature below 85°C by providing proper airflow or heatsinking if necessary. In fanless designs, consider reducing data rate or using lower power modes.
Informations de conformité
RoHS compliant and lead-free/halogen-free per datasheet. Not AEC-Q100 qualified.
