K3K9K90BM-MGCP - LPDDR5 DRAM | Samsung Semiconductor
Référence : K3K9K90BM-MGCP ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $58.28 | $58,28 |
| 10 | $55.9 | $559,00 |
| 100 | $52.45 | $5 245,00 |
| 500 | $49.8 | $24 900,00 |
| 1 000 | $47.15 | $47 150,00 |
K3K9K90BM-MGCP Présentation
LPDDR5 DRAM is a type of synchronous dynamic random-access memory optimized for low power and high bandwidth in mobile, edge computing, and embedded systems. In the memory hierarchy it sits under the DRAM -> synchronous DRAM -> low-power SDRAM taxonomy defined around the JEDEC LPDDR5 standard, and it succeeds LPDDR4X in mobile SoC memory subsystems.
Key features of Samsung LPDDR5 devices include 6400 Mbps pin speed, deep power-down and per-bank refresh architectures that cut idle power, and a simplified two-channel architecture that improves command efficiency versus LPDDR4X. Density options across the K3K/K3L family range from 32 Gbit to 64 Gbit per package, organized as x32-wide interfaces for SoC attachment.
Technically, LPDDR5 introduces WCK (word clock) strobing, bank group architecture, and DVFS (dynamic voltage frequency scaling) of the clock domain, allowing the memory controller to throttle speed and voltage to match workload, which is the main source of the ~20% system power saving versus LPDDR4X.
Typical applications include flagship smartphone and tablet main memory, AI edge accelerators, automotive infotainment and ADAS platforms, and 5G networking equipment where high bandwidth per watt is critical.
Design consideration: LPDDR5 signal integrity requires tightly matched length routing of CA, DQ, DQS, and WCK traces on the PCB; consult the Samsung LPDDR5 design guide for fly-by topology and termination recommendations.
This page synthesizes distributor stock data, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour K3K9K90BM-MGCP — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K3K9K90BM-MGCP (même facteur de forme et même empreinte) — différant par Memory Type, Package, Interface, Organization, Data Rate.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K3K8K80BM-MGCP
✅ Remplacement direct✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K3K8K80BM-JGCT
✅ Remplacement direct✓ En stock
$3.1 / unité
Voir la fiche technique →K3LKCKC0BM-MGCP
✅ Remplacement direct✓ En stock
$65.625 / unité
Voir la fiche technique →K3LKBKB0BM-MGCP
✅ Remplacement direct✓ En stock
$46.62 / unité
Voir la fiche technique →K3K9K90BM-MGCP Valeurs maximales et caractéristiques électriques
| Type de mémoire | LPDDR5 SDRAM (CMOS) |
| Pin Speed | Up to 6400 Mbps (family maximum per Samsung LPDDR5 page) |
| Interface Width | x32 (family standard for K3K/K3L BM packages) |
| Boîtier | PBGA (Plastic Ball Grid Array) |
| Refresh | Self-refresh with per-bank refresh support (LPDDR5 standard) |
| Power Saving vs LPDDR4X | Approximately 20% (Samsung published figure) |
| Max Bandwidth | Up to 51.2 GB/s (family maximum per Samsung LPDDR5 page) |
| Type de montage | Surface Mount |
| Clocking | WCK (word clock) architecture |
| Standards | JEDEC LPDDR5 |
Guide de configuration des broches du K3K9K90BM-MGCP pbga (plastic ball grid array)
Configuration des broches du K3K9K90BM-MGCP (boîtier pbga (plastic ball grid array)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K3K9K90BM-MGCP.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K3K9K90BM-MGCP convient pour 6 applications: Smartphone Main Memory, AI Edge Accelerators, Automotive Infotainment and ADAS, 5G Networking Equipment, Tablets and Foldable Devices, Industrial Vision and Machine Vision Cameras.
Smartphone Main Memory
Flagship smartphones use LPDDR5 as the primary system memory because it combines 6400 Mbps pin speed with roughly 20% lower power than LPDDR4X, directly extending battery life under heavy multitasking. The K3K9K90BM-MGCP, as a Samsung LPDDR5 PBGA device, attaches to a mobile SoC over a x32-wide channel with WCK clocking, enabling up to 51.2 GB/s aggregate bandwidth for gaming, camera pipelines, and on-device AI inference. Designers must package the DRAM as a PoP (Package-on-Package) or package-down variant and maintain tightly matched trace lengths; the DVFS capability allows the memory controller to drop frequency and voltage during idle, which is where most of the power saving is realized in real-world use.
Recommandé
AI Edge Accelerators
Edge-AI modules for vision and speech inference are memory-bandwidth bound, making LPDDR5 the dominant external memory choice. The K3K9K90BM-MGCP provides the LPDDR5 bandwidth profile (up to 6400 Mbps per pin, up to 51.2 GB/s per device across the Samsung family) needed to feed neural network accelerators without starving MAC arrays. The x32 organization of the BM package allows two or four devices to be ganged for wider buses, multiplying effective bandwidth linearly. Because inference workloads tolerate moderate latency but demand sustained throughput, LPDDR5's bank-group architecture sustains higher effective utilization than LPDDR4X at similar idle power, and its 20% power advantage directly reduces thermal-sink requirements in fanless edge enclosures.
Recommandé
Automotive Infotainment and ADAS
Automotive cockpit SoCs and ADAS domain controllers require high-bandwidth, low-power DRAM to sustain multiple camera streams, navigation rendering, and voice processing simultaneously. Samsung LPDDR5 parts of the K3K/K3L PBGA family are designed for these platforms, with the documented K3LKBKB0BM-MGCP variant offering an extended -25C to +85C operating range suited to automotive cabin environments. The 6400 Mbps pin speed supports multi-display clusters at high resolution, while DVFS lets the system drop power when the vehicle is parked. Designers must verify the specific automotive-grade qualification suffix and AEC-Q100 status on the Samsung datasheet before deploying any LPDDR5 MPN in a safety-relevant program.
Recommandé
5G Networking Equipment
5G small cells, baseband units, and network appliances require memory that sustains high packet-processing throughput within tight power budgets. LPDDR5's 6400 Mbps pin speed and up to 51.2 GB/s device bandwidth provide the buffer memory headroom for line-rate forwarding, while the ~20% power reduction versus LPDDR4X lowers the total thermal design power of the unit - critical for passive-cooled outdoor equipment. The K3K9K90BM-MGCP in its PBGA package mounts directly on the baseband card adjacent to the network SoC. Layout teams should follow Samsung's LPDDR5 fly-by routing guidance, keep CA/DQ trace skew within specification, and provision DVFS so the link can throttle during low-traffic periods to save energy.
Recommandé
Tablets and Foldable Devices
Tablets and foldable smartphones balance large displays and multitasking against battery capacity, and LPDDR5 addresses both sides of that equation. The K3K9K90BM-MGCP's LPDDR5 bandwidth (family maximum 51.2 GB/s) supports high-refresh-rate displays and split-screen workloads, while the 20% power saving versus LPDDR4X translates directly into additional screen-on time in thermally constrained thin chassis. The compact PBGA footprint permits dense stacked placement near the application processor, shortening flight times and allowing the controller to run the interface at full 6400 Mbps speed with acceptable signal integrity. Per-bank refresh further reduces self-refresh current during ambient-display idle states.
Recommandé
Industrial Vision and Machine Vision Cameras
Industrial machine-vision systems stream multi-megapixel frames at high frame rates into ISP pipelines, requiring external memory with both bandwidth and low latency. Samsung LPDDR5 devices such as the K3K9K90BM-MGCP provide the 6400 Mbps-class interface that keeps frame buffers from becoming the bottleneck in edge inspection systems, and the documented -25C to +85C capability of the family (K3LKBKB0BM-MGCP) covers factory-floor temperature extremes. The x32-wide PBGA device connects to the vision SoC with standard LPDDR5 controller IP, and DVFS allows throughput to be scaled down between inspection cycles. Designers should validate signal integrity at full speed with realistic channel simulation before committing the PCB stackup.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K3K9K90BM-MGCP — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K3K8K80BM-MGCP | K3K8K80BM-JGCT | K3LKCKC0BM-MGCP | K3LKBKB0BM-MGCP |
|---|---|---|---|---|---|
| Package | PBGA (Samsung K3K BM platform) | PBGA (BM) - same platform | PBGA (BM) - same platform | PBGA315 | PBGA (BM) - same platform |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Technology | LPDDR5 | LPDDR5 | LPDDR5 | LPDDR5 (documented) | LPDDR5 (documented) |
| Organization | x32 (family standard) | x32 | x32 | 2Gx32 | x32 |
Principaux différenciateurs
- LPDDR5 power efficiency (vs LPDDR4X-class memory)
- Higher bandwidth than LPDDR4X generation (vs LPDDR4X (4266 Mbps class))
- Same-footprint family flexibility (vs K3LKCKC0BM-MGCP)
Notes de conception
LPDDR5 interfaces at 6400 Mbps demand strict trace-length matching across CA, DQ, DQS, and WCK groups. Keep length mismatch within the controller vendor's skew budget (typically a few mils within each byte lane), route over unbroken reference planes, and avoid via stubs on DQ/DQS lines. Simulate the full channel (SoC die, package, PCB, DRAM package) at the target speed bin before committing the stackup; PBGA ball-out constraints often dictate layer transition points, so plan impedance-controlled transitions early in floorplanning.
LPDDR5 uses multiple supply rails (VDD, VDDQ, and related rails per the JEDEC LPDDR5 standard) plus DVFS-capable clock domains. Use a dedicated PMIC channel with dynamic voltage scaling support for VDDQ so the controller can exploit LPDDR5's power-saving DVFS - this is where the ~20% power advantage versus LPDDR4X is realized. Place bulk and high-frequency decoupling close to each ball group; BGA via-in-pad decoupling minimizes loop inductance at 6400 Mbps switching currents.
Do not assume pin compatibility between Samsung LPDDR5 MPNs based on similar part numbers alone - the density digit (8, 9, K, L, etc.) encodes different organizations, and speed/temperature suffixes (MGCP, JGCT, BGCT) encode different bins. Always pull the exact ordering-information table from the Samsung datasheet for both the original and the substitute, confirm identical ball map and organization, and verify the memory controller supports the substitute's speed bin and timing registers before qualifying a swap.
For the PBGA package, define the land pattern per the Samsung package drawing and use solder-mask-defined or non-solder-mask-defined pads consistently with the assembly house's capability. Under-BGA via fan-out (dog-bone or via-in-pad) affects both routability at x32 width and thermal relief; via-in-pad with fill is recommended for the highest-speed DQ groups. Allocate at least one solid internal plane as the VDDQ reference adjacent to the signal layers carrying DQ/DQS/WCK.
Informations de conformité
Compliance data for this exact MPN was not present in the retrieved web data; obtain the Samsung environmental certificate before making compliance claims.
