K4AAG165WM-BCRC - 16Gb DDR4 x16 SDRAM 3200Mbps | Samsung
Référence : K4AAG165WM-BCRC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $29.5 | $29,50 |
| 10 | $27.8 | $278,00 |
| 100 | $25.9 | $2 590,00 |
| 500 | $24.2 | $12 100,00 |
| 1 000 | $22.6 | $22 600,00 |
K4AAG165WM-BCRC Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM standard, sitting within the memory hierarchy under volatile main memory in computing and embedded systems. Compared with DDR3, DDR4 lowers operating voltage from 1.5V to 1.2V, doubles bank groups, and increases data rates up to 3200 Mbps, cutting system power consumption by roughly 25% at equivalent bandwidth.
Key features of this part include a wide operating temperature envelope, auto precharge, asynchronous reset, CRC and parity protection on critical signals, ZQ calibration for on-die termination accuracy, dynamic on-chip termination (ODT), and data mask functionality for selective byte writes. These functions are shared across Samsung's DDR4 x16 product line, including the verified K4A4G165WE-BCRC and K4AAG165WC-BCWE siblings.
The device uses a bank-group architecture with multiple internal banks per group, enabling short burst interleave and improving effective bandwidth. Dynamic ODT plus ZQ calibration maintains signal integrity on heavily loaded x16 buses at 3200 Mbps, while CRC protects address/command integrity in high-reliability designs. Bank group scheduling allows the memory controller to overlap activation and precharge across groups, sustaining high efficiency.
Typical applications include industrial controllers and embedded computing modules, networking and telecommunications equipment, consumer electronics and set-top platforms, and PC/server DRAM modules. The x16 organization suits designs needing 16-bit or 32-bit (two-chip) data buses without byte-lane stitching complexity.
Design consideration: maintain 1.2V core and 1.2V (VDDQ) termination rails with tight decoupling, route fly-by or balanced-tap address/command topologies per JEDEC DDR4 guidelines, and complete ZQ calibration on the 240-ohm reference resistor (RZQ) with 1% accuracy.
This page synthesizes distributor pricing, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing buyers and engineers a single decision-ready resource.
Alternatives de remplacement direct pour K4AAG165WM-BCRC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4AAG165WM-BCRC (même facteur de forme et même empreinte) — différant par Package, Data Rate, Interface, RoHS Status, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4AAG165WA-BCRC
✅ Remplacement direct✓ En stock
$64.9 / unité
Voir la fiche technique →K4AAG165WA-BCWE
✅ Remplacement direct✓ En stock
$62.4 / unité
Voir la fiche technique →K4AAG165WA-BCTD
✅ Remplacement direct✓ En stock
$60.59 / unité
Voir la fiche technique →K4AAG165WC-BCWE
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4A8G165WC-BCRC
✅ Remplacement direct✓ En stock
$23 / unité
Voir la fiche technique →K4A4G165WE-BCRC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4AAG165WM-BCRC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 16 Gb |
| Organisation de la mémoire | 1G x 16 |
| Débit de données | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V |
| Interface | DDR4 (SSTL-12) |
| Boîtier | 96-ball FBGA |
| Type de montage | Surface Mount |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| Dynamic On-Chip Termination | Yes |
| Data Mask Function | Yes |
| Statut RoHS | Compliant |
Guide de configuration des broches du K4AAG165WM-BCRC 96-ball fbga
Configuration des broches du K4AAG165WM-BCRC (boîtier 96-ball fbga). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K4AAG165WM-BCRC.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4AAG165WM-BCRC convient pour 6 applications: Industrial Controllers, Networking and Telecommunications Equipment, Embedded Computing Modules, Consumer Electronics and Set-Top Platforms, Automotive Infotainment and Telematics, Test and Measurement Instruments.
Industrial Controllers
The K4AAG165WM-BCRC fits industrial controllers that need high-capacity volatile memory for data logging, protocol buffering, and real-time processing. Its 16Gb x16 organization provides 2 GB per chip in a single 96-ball FBGA, reducing component count versus stacked 8Gb solutions. The 1.2V supply cuts power dissipation in sealed, fanless enclosures, while CRC and asynchronous reset improve fault robustness in electrically noisy factory environments. Designers typically place it on 16-bit or 32-bit DDR4 buses with dynamic ODT enabled, and the 3200 Mbps class data rate sustains deterministic control-loop latencies without memory bottlenecks.
Recommandé
Networking and Telecommunications Equipment
Switches, routers, and telecom line cards require deep packet buffers and fast table lookups, making a 3200 Mbps DDR4 x16 device an efficient main-memory choice. The K4AAG165WM-BCRC supplies 2 GB in a compact footprint, and its bank-group architecture allows the memory controller to interleave bursts across groups, maximizing effective bandwidth on heavily loaded forwarding planes. CRC protects address/command integrity on long traces typical of 1U chassis layouts, and ZQ calibration keeps on-die termination accurate across temperature swings in telecom cabinets. Using x16 parts simplifies 16/32-bit bus routing versus byte-wide x8 stitching.
Recommandé
Embedded Computing Modules
SoM and COM Express designs integrate the K4AAG165WM-BCRC to deliver 2 GB or more of soldered-down DRAM per module, avoiding DIMM sockets and their height, cost, and reliability penalties. The 96-ball FBGA solder attachment withstands shock and vibration in mobile and vehicular embedded platforms. At 3200 Mbps the part feeds modern application processors without bottlenecking multimedia workloads, while 1.2V operation lowers module thermal design power. DDR4 fly-by routing with per-byte dynamic ODT, supported natively by this device, maintains signal integrity across the four to eight chip loads typical on module PCBs.
Recommandé
Consumer Electronics and Set-Top Platforms
Set-top boxes, smart TVs, and streaming media players use x16 DDR4 devices as the primary system memory for 4K video buffering and application execution. The K4AAG165WM-BCRC offers density headroom for multi-stream HEVC decode frame buffers at 3200 Mbps bandwidth, and its 1.2V operation meets stringent consumer standby power budgets. The x16 organization lets cost-optimized SoCs use a single-chip 16-bit bus, minimizing BOM cost and layer count. Data mask support enables efficient partial-frame writes during graphics compositing, reducing bus turnaround overhead in UI rendering pipelines.
Recommandé
Automotive Infotainment and Telematics
DDR4 SDRAM of this class is used in automotive infotainment head units and telematics gateways (verify the temperature suffix; the Q1/AEC-Q100 grade should be confirmed for automotive use). The 16Gb density supports navigation map caching, multi-display frame buffers, and over-the-air update staging, while 3200 Mbps bandwidth keeps GPU-accelerated HMI rendering fluid. Soldered FBGA mounting survives -40C to +85C cabin environments better than socketed memory, and CRC plus asynchronous reset support functional-safety architectures that detect and recover from transient bus faults during vehicle operation.
Recommandé
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with sustained write bandwidth. The K4AAG165WM-BCRC provides 2 GB per chip at 3200 Mbps, letting instrument front-ends stream acquisition data without dropped samples. Its CRC and asynchronous reset features improve measurement confidence by protecting the acquisition pipeline, and ZQ-calibrated ODT preserves eye diagrams across the densely routed capture boards typical of bench instruments. The x16 data width simplifies interleaved multi-channel capture architectures where each channel writes 16-bit samples to a dedicated DRAM.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4AAG165WM-BCRC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4AAG165WA-BCRC | K4AAG165WC-BCWE | K4A8G165WC-BCRC | K4A4G165WE-BCRC |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | 96-ball FBGA | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same |
| Density | 16 Gb | 16 Gb | 16 Gb | 8 Gb | 4 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 512M x 16 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Key Features | Auto precharge, async reset, CRC, ZQ cal, dynamic ODT, data mask | Same DDR4 feature set | Same DDR4 feature set | Auto precharge, async reset, CRC, dynamic ODT, ZQ cal | Auto precharge, async reset, CRC, ZQ cal, dynamic ODT, data mask |
Principaux différenciateurs
- Highest speed grade in the Samsung 16Gb x16 family (vs K4AAG165WA-BCRC)
- Maximum density on the x16 FBGA-96 footprint (vs K4A8G165WC-BCRC)
- Matches WC-grade 3200 Mbps siblings with broader sourcing (vs K4AAG165WC-BCWE)
Notes de conception
Route the DDR4 x16 bus following JEDEC-recommended topologies: fly-by for address/command/controls and point-to-point for DQ/DQS/DM per byte lane. Keep DQS to its DQ group length-matched within +/-25 mils and target 40-ohm single-ended trace impedance on a 4-layer or better stackup. Place the 240-ohm RZQ resistor to VSSGND with 1% tolerance and short, direct traces - ZQ calibration accuracy at 3200 Mbps depends directly on this resistor precision.
Estimate: a 16Gb DDR4 active at 3200 Mbps typically draws 400-600 mA average from the 1.2V rail depending on access pattern - size the VDD/VDDQ regulator (for example TPS54218 family) with headroom above 1 A peak per device. Decouple with at least 10x 100 nF ceramics plus bulk 47 uF within 10 mm of VDD balls, and use a dedicated VTT termination rail if the controller requires external termination. Samsung datasheet IDD figures should be used for final thermal and power budgets.
Do not substitute speed grades without updating controller timing registers: replacing a BCRC (3200 Mbps class) part with a WA grade (2666 Mbps) part requires derating CL, tRCD, tRP, and tRC in the memory controller configuration, or the system will fail training. Also confirm the die revision letter in the Samsung ordering-information table matches your qualified BOM - DDR4 vendors ship multiple die revisions on the same base MPN with slightly different AC timing tables.
Informations de conformité
RoHS compliant per Samsung DDR4 family product pages. AEC-Q100 qualification not claimed for standard K4A-series DDR4 - confirm automotive suffix availability with Samsung for automotive programs.
