K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
Référence : K4A8G165WC-BCRC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $31.67 | $31,67 |
| 10 | $29.5 | $295,00 |
| 100 | $27.2 | $2 720,00 |
| 500 | $25.1 | $12 550,00 |
| 1 000 | $23 | $23 000,00 |
K4A8G165WC-BCRC Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption by about 25%. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, providing high-speed temporary data storage for active programs and data. It is essential for servers, desktops, laptops, and embedded systems requiring high bandwidth and capacity.
Key features of the K4A8G165WC-BCRC include a 2400 Mbps data rate, 8Gb density, and a 16-bit I/O interface. The device supports a supply voltage range of 1.14V to 1.26V, ensuring compatibility with standard DDR4 power rails. It also features programmable CAS latency, burst length of 8 (BL8), and on-die termination for improved signal integrity. The 96-ball FBGA package (9mm x 13mm) is optimized for space-constrained designs.
Technically, the K4A8G165WC is based on Samsung's C-die process technology, offering improved performance and power efficiency. It includes a temperature-compensated self-refresh (TCSR) feature to reduce power consumption at high temperatures. The device supports a 1.2V VDD and VDDQ, with a separate VPP of 2.5V for wordline boost. The memory array is organized into 16 banks (4 bank groups), enabling higher concurrency and reduced latency.
Typical applications include high-performance computing, servers, networking equipment, industrial controllers, and embedded systems requiring reliable, high-speed memory. The 512M x 16 organization is ideal for systems needing 16-bit wide memory buses, such as SoCs and FPGAs with DDR4 controllers.
When designing with this device, ensure proper decoupling of the VDD and VDDQ rails with 0.1uF and 1uF capacitors, and follow the PCB layout guidelines for DDR4 routing to maintain signal integrity at 2400 Mbps. The device requires a stable 1.2V supply and a 2.5V VPP supply for wordline boost.
Alternatives de remplacement direct pour K4A8G165WC-BCRC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4A8G165WC-BCRC (même facteur de forme et même empreinte) — différant par Package, Data Rate, Interface, Operating Temperature, Organization.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G165WB-BCRC
✅ Remplacement direct✓ En stock
$12.57 / unité
Voir la fiche technique →K4A8G165WC-BCTD
✅ Remplacement direct✓ En stock
$41.2 / unité
Voir la fiche technique →K4A8G165WB-BCTD
✅ Remplacement direct✓ En stock
$37 / unité
Voir la fiche technique →MT40A512M16JY-07EAIT:B
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$8.1 / unité
Voir la fiche technique →H5AN8G6NDJR-XNC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$55.6818 / unité
Voir la fiche technique →NT5AD512M16C4-JR
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$73.75 / unité
Voir la fiche technique →K4A8G165WC-BCRC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 512M x 16 |
| Débit de données | 2400 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) |
| VPP Voltage | 2.5 V |
| Température de fonctionnement | 0°C to +95°C (case) |
| Boîtier | 96-ball FBGA (9mm x 13mm) |
| Interface | 16-bit I/O |
| Banks | 16 (4 bank groups) |
| Burst Length | 8 (BL8) |
| Latence CAS | Programmable (e.g., 16, 17, 18) |
| Refresh | Temperature-compensated self-refresh (TCSR) |
| RoHS | Compliant |
| Type de montage | Surface Mount |
Configuration des broches de K4A8G165WC-BCRC
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — I/O power supply (1.2V) |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
Applications typiques
K4A8G165WC-BCRC convient pour 6 applications: High-Performance Computing, Networking Equipment, Industrial Controllers, Embedded Systems, Data Storage Systems, Test and Measurement.
High-Performance Computing
The K4A8G165WC-BCRC provides 8Gb capacity and 2400 Mbps data rate, making it ideal for HPC systems that require high memory bandwidth for complex simulations and data processing. Its 512M x 16 organization supports wide data buses, and the low 1.2V supply reduces power consumption in large memory arrays. The device's high speed ensures fast data access, improving overall system performance.
Recommandé
Networking Equipment
In networking switches and routers, the K4A8G165WC-BCRC offers high bandwidth and reliability for packet buffering and forwarding tables. Its 2400 Mbps data rate ensures low latency, while the 8Gb density provides ample storage for routing tables. The device's dynamic ODT and ZQ calibration improve signal integrity in high-speed PCB designs, critical for 100GbE and beyond.
Recommandé
Industrial Controllers
The K4A8G165WC-BCRC is suitable for industrial controllers that require reliable, high-speed memory for real-time control and data logging. Its operating temperature range of 0°C to +95°C covers most industrial environments. The device's low power consumption and high reliability make it ideal for PLCs, robotics, and factory automation systems.
Recommandé
Embedded Systems
For embedded systems like single-board computers and IoT gateways, the K4A8G165WC-BCRC provides a balance of capacity, speed, and power efficiency. Its 8Gb density supports complex applications, while the 1.2V supply minimizes power draw. The 96-ball FBGA package is compact, fitting space-constrained designs. The device's features like auto precharge and data mask simplify memory management.
Recommandé
Data Storage Systems
In SSDs and storage controllers, the K4A8G165WC-BCRC is used as cache memory to accelerate data access. Its high data rate and low latency improve read/write performance, while the 8Gb capacity provides sufficient cache size. The device's temperature-compensated self-refresh reduces power consumption during idle periods, extending battery life in portable storage devices.
Recommandé
Test and Measurement
The K4A8G165WC-BCRC is used in test and measurement equipment like oscilloscopes and logic analyzers for high-speed data acquisition and buffering. Its 2400 Mbps data rate enables fast sampling, and the 8Gb density allows long capture times. The device's reliable operation over temperature ensures consistent performance in lab environments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G165WC-BCRC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G165WB-BCRC | K4A8G165WC-BCTD | MT40A512M16JY-07EAIT | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 2400 Mbps | 2400 Mbps | 2400 Mbps | 2400 Mbps | 2400 Mbps |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Principaux différenciateurs
- C-die process technology (vs K4A8G165WB-BCRC)
- 2400 Mbps data rate (vs K4A8G165WC-BCTD)
- Samsung brand reliability (vs MT40A512M16JY-07EAIT)
Notes de conception
For DDR4 routing at 2400 Mbps, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms for differential pairs. Keep trace lengths matched within +/- 10 mils for DQ/DQS groups. Use ground planes adjacent to signal layers to minimize crosstalk. Refer to JEDEC DDR4 design guidelines for detailed layout rules.
Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the power pins. Use a 2.5V VPP supply for wordline boost, decoupled with 0.1uF. Ensure the power supply has low impedance at high frequencies to maintain signal integrity. Follow the recommended power-up sequence: VDD, VDDQ, then VPP.
The K4A8G165WC-BCRC operates up to +95°C case temperature. Ensure adequate airflow or heatsinking in high-ambient environments. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Monitor junction temperature to avoid exceeding the maximum rating.
Informations de conformité
RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.
